在本論文中我們將垂直共振腔面射型雷射與PIN光檢器做了一些基礎的研究，並且在我們的實驗室完成了垂直共振腔面射型雷射與PIN光檢器元件的製作與量測。
在垂直共振腔面射型雷射方面，主要研究發光波長為850 nm，材料為AlGaAs/GaAs的垂直共振腔面射型雷射，我們從最基礎的理論探討開始，其中包含了同調光在多層結構的特性，計算AlxGa1-xAs的反射係數頻譜，針對布拉格反射鏡作原理的探討，並以我們的模擬方法計算出布拉格反射鏡的反射頻譜，另外還包括如何降低布拉格反射鏡電阻，以及對主動區的一些基礎研究。
在PIN光二極體部分，所研究的材料也是AlGaAs/GaAs，吸收波長在850 nm的光檢器，磊晶結構設計為鋅擴散光二極體，但由於設備上的不足，改以離子佈值取代鋅擴散，並成功製作出元件，在本論文中包含了PIN光二極體的原理、製程及量測的探討。
而對於所製作出來的元件，我們以自己架設的基本光學量測系統，量測到不少元件的電與光的特性，並對量測到的結果作了基本的分析研究，並在最後作一個結論。

A Vertical Cavity Surface Emitting Laser (VCSEL) and PIN photodetector has been designed and fabricated for operation at a wavelength of 830 ~ 850nm. The VCSEL device design incorporates Bragg mirrors with numbers of periods. The present structure employs III-V semiconductor alloys with GaAs as the active layer and AlGaAs/GaAs multi-layer stack as the Distributed Bragg Reflector (DBR). The material parameters of the alloys including index of refraction and bandgap energy are calculated over the entire composition range. The difference in the indices of refraction between AlGaAs and GaAs alternating layers is calculated. The PIN photodiode is Zn-diffusion planar structure. We used Zn ion implant to instead Zn-diffusion to form the P-type region. The MOCVD technique is employed for the epitaxial both VCSEL and PIN structure growth. The selective oxidation of AlGaAs layer is used to form the current confinement aperture. The VCSEL and PIN photodiode performance has been measured and discussed.

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