| 研究生: |
劉子凡 Tzu-Fan Liu |
|---|---|
| 論文名稱: |
電漿輔助原子層沉積法鍍製抗反射膜於微型塑膠透鏡 Plasma Enhanced Atomic Layer Deposition of Antireflection coatings on Micro plastic lens |
| 指導教授: | 郭倩丞 |
| 口試委員: | |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程學系 Department of Optics and Photonics |
| 論文出版年: | 2020 |
| 畢業學年度: | 108 |
| 語文別: | 中文 |
| 論文頁數: | 91 |
| 中文關鍵詞: | 電漿輔助原子沉積 、抗反射膜 |
| 外文關鍵詞: | Plasma Enhanced Atomic Layer Deposition, Antireflection coating |
| 相關次數: | 點閱:11 下載:0 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
近年來半導體產業的快速發展對線寬的要求越來越小,原子層沉積
技術因具有極佳的均勻性和保形性,隨即快速發展,應用領域也越來
越廣泛。
在光學方面的應用,隨著光學設計架構越來越複雜,出現了越來越
多的自由曲面或是微結構的透鏡,來取代光學元件的件數,而這些微
結構的光學元件在製造時使用成本較低的塑膠(如 PMMA、PC、Zeonex)
替代玻璃。
本實驗使用電漿輔助原子層沉積法鍍製,探討了單層膜在 60℃製程
下折射率與消光係數在不同功率和時間下的趨勢,也分析前驅物在
60℃製程下的反應性,並使用 X 射線光電子能譜儀分析薄膜中殘留的
碳、氮比例,推測其雜質是否影響光學性質。將不同參數的抗反射膜
鍍製於塑膠基板上測試其附著性與是否膜裂,最後鍍製於微型塑膠透
鏡上,並使用顯微鏡光譜儀量測透鏡各點在波段 420nm 到 680nm 抗反
射光譜圖及均勻性,平均反射率約為 0.78%。
In recent years, due to the rapid development of the semiconductor
industry, the requirements for line width have become lesser. Atomic Layer
Deposition technology developed rapidly because of its excellent
uniformity and shape retention.
In optical applications, as the optical design structure becomes more
complex, more Freeform surface or structured lenses have appeared to
replace of optical components. In order to reduce costs during
manufacturing, plastic substrates (such as PMMA, PC, Zeonex) are used
instead of glass.
In this experiment, plasma-enhanced atomic layer deposition method
was used. The trend of refractive index and extinction coefficient of
single-layer film under 60℃ process with different power and process time
was discussed. The reactivity of the precursors at 60℃ was also analyzed.
The use of XPS to analyze the residual carbon and nitrogen ratio in the
film to infer whether its impurities affect the optical properties. The
anti-reflection (AR) coating with different parameters is deposited on the
plastic substrates to test its adhesion and film cracking.
Finally, the AR film coated on the micro plastic lens is used to
measure the anti-reflection spectrum and uniformity of each point of the
lens in the wavelength range of 420 nm to 680 nm with an optical
microscope spectrometer. The average reflectance is about 0.78%.
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