磷化銦與絕緣體上矽材料輻射性質之研究｜國立中央大學博碩士論文系統

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研究生：	陳企甫 Chi-fu Chen
論文名稱：	磷化銦與絕緣體上矽材料輻射性質之研究 Investigation of Radiative Properties for InP and SOI
指導教授：	曾重仁 Chung-jen Tseng
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 機械工程學系 Department of Mechanical Engineering
畢業學年度：	96
語文別：	中文
論文頁數：	97
中文關鍵詞：	磷化銦、絕緣體上矽、輻射性質、快速熱製程、半導體
外文關鍵詞：	InP, SOI, radiative properties, RTP, semiconductor
相關次數：	點閱：11 下載：0
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本研究運用傅立葉轉換紅外線光譜儀 (FT-IR spectrometer) 搭配高溫穿透及反射腔體，量測數種不同摻雜的磷化銦（InP）晶圓與氧離子佈植隔離（Separation by Implantation of Oxygen, SIMOX）絕緣體上矽（Silicon on Insulator, SOI）晶圓，波長分別由0.8μm（InP）與0.7μm（SOI）到19μm，溫度由室溫分別到700℃（InP）與800℃（SOI）之輻射性質。目的在建立InP與SOI於溫升狀態下之光學常數數值，以補足過去文獻中，僅有常溫下數據，不敷高溫熱處理製程使用之缺憾。此外，本文中所分別計算出與量測得到的溫升狀態下之InP總放射率（total emissivity）及SIMOX SOI的穿透、反射等輻射性質也是文獻上首次出現。並且經由介紹快速熱處理製程（Rapid Thermal Processing, RTP），了解材料之輻射性質在溫度量測上所扮演的重要角色。本實驗經由量測InP與SOI晶圓於溫升時所表現的表觀（apparent）穿透率和反射率，以熱輻射和電磁波理論所提供關係，計算出相關的輻射性質，並分別與Palik [1]（InP）之數值及Georgia Institute of Technology之Lee and Zhang的模擬軟體Rad-Pro v1.2 [2]（SOI）進行比較，以相互驗證數據之正確性。

In this work, we measured several InP wafers with different doping and Separation by Implantation of Oxygen (SIMOX) Silicon on Insulator (SOI) wafer by using Fourier Transform Infrared (FT-IR) spectrometer with a high temperature transmittance and reflectance cell, respectively. The measurement can be performed in the temperature range from room temperature to 700℃ for InP and 800℃ for SOI respectively over a wide spectral range from 0.8μm for InP and 0.7μm for SOI to 19μm. Due to the lacks of empirical or experimental data of InP and SOI wafers at elevated temperature at present, they are simultaneously measured and analysis in the present study. Furthermore, the total emissivity of InP and the reflectance and transmittance of SIMOX SOI wafers at elevated temperatures is firstly reported in this paper. The other related radiative properties are also simultaneously deduced by optical models. And using the data from Palik’s handbook[1] for InP and the simulation software Rad-Pro v1.2 of Lee and Zhang[2] for SOI to validate the current experimental measurement.

中文摘要…………………………………………………………………I
英文摘要…………………………………………………………………II
誌謝……………………………………………………………………III
目錄………………………………………………………………………IV
圖目錄…………………………………………………………………VII
表目錄……………………………………………………………………IX
符號說明…………………………………………………………………X
一、緒論
1-1研究動機與背景……………………………………………………1
1-2文獻回顧……………………………………………………………2
1-2-1磷化銦（InP）文獻回顧…………………………………………3
1-2-2絕緣體上矽（SOI）文獻回顧…………………………………6
1-3研究內容……………………………………………………………8
二、背景理論
2-1熱輻射理論………………………………………………………11
2-1-1馬克斯威爾方程式（Maxwell’s equation）…………………11
2-1-2黑體輻射………………………………………………………12
2-1-3放射率…………………………………………………………13
2-1-4放射率與吸收率之關係………………………………………13
2-2吸收機制…………………………………………………………14
2-2-1帶間躍遷（Band-to-band Transition）…………………………14
2-2-2能帶與雜質能階（Impurity Level）躍遷……………………15
2-2-3自由載子（Free-carrier）吸收…………………………………15
2-2-4內導電帶（Interconduction-band）遷移………………………16
2-2-5內價電帶（Intervalence-band）遷移…………………………16
2-2-6晶格震盪（Lattice Vibrations）吸收…………………………17
2-3光束覓跡（Ray Tracing）法………………………………………18
2-3-1單層（無薄膜）材料…………………………………………18
2-3-2薄膜材料……………………………………………………19
三、實驗內容
3-1實驗儀器設備……………………………………………………25
3-1-1傅立葉轉換紅外線光譜儀…………………………………26
3-1-2高溫加熱腔體………………………………………………30
3-1-3後端資料處理系統…………………………………………34
3-2實驗試片…………………………………………………………35
3-2-1 InP試片………………………………………………………35
3-2-2 SOI試片………………………………………………………36
3-3實驗程序…………………………………………………………37
3-3-1穿透率量測…………………………………………………37
3-3-2反射率量測…………………………………………………37
3-4實驗儀器校正分析………………………………………………38
3-5實驗誤差分析……………………………………………………43
四、結果與討論
4-1量測原理簡介……………………………………………………47
4-2磷化銦（InP）量測數據…………………………………………47
4-2-1 InP穿透率……………………………………………………47
4-2-2 InP反射率……………………………………………………51
4-3磷化銦（InP）計算數據…………………………………………54
4-3-1 InP放射率……………………………………………………54
4-3-2折射參數（refractive index, n）………………………………57
4-3-3吸收係數（absorption coefficient, α）………………………59
4-3-4總放射率（total emissivity）…………………………………60
4-4絕緣體上矽（SOI）量測數據……………………………………61
4-4-1 SOI穿透率……………………………………………………61
4-4-2 SOI反射率……………………………………………………69
4-5絕緣體上矽（SOI）計算數據……………………………………79
4-5-1 SOI放射率……………………………………………………79
4-5-2 SOI總放射率…………………………………………………83
五、結論與建議
5-1結論………………………………………………………………85
5-1-1磷化銦（InP）結論……………………………………………85
5-1-2絕緣體上矽（SOI）結論………………………………………85
5-2未來工作建議……………………………………………………86
參考文獻………………………………………………………………87
圖目錄
圖2.1均勻平面波的電磁與磁場示意圖………………………………11
圖2.2帶間躍遷示意圖…………………………………………………14
圖2.3自由載子吸收示意圖……………………………………………15
圖2.4內導電帶遷移示意圖……………………………………………16
圖2.5內價電帶遷移示意圖……………………………………………17
圖2.6光束覓跡法示意圖………………………………………………18
圖2.7 SOI正面入射示意圖……………………………………………20
圖2.8 SOI背面入射示意圖……………………………………………20
圖3.1 FT-IR spectrometer示意圖……………………………………25
圖3.2麥克森干涉儀示意圖……………………………………………27
圖3.3 DTGS偵測器……………………………………………………29
圖3.4 Si偵測器…………………………………………………………30
圖3.5穿透腔體架設於FT-IR上………………………………………31
圖3.6穿透腔體結構示意圖……………………………………………31
圖3.7 sample holder之thermal couple路徑改良示意圖…………32
圖3.8反射腔體架設於FT-IR上………………………………………33
圖3.9反射腔體結構示意圖……………………………………………33
圖3.10背景光源頻譜圖………………………………………………38
圖3.11 DTGS偵測器穿透率量測校正圖……………………………40
圖3.12 Si偵測器穿透率量測校正圖…………………………………42
圖4.1 ~ 4.8 InP穿透頻譜………………………………………………48
圖4.9 ~ 4.16 InP反射頻譜………………………………………………51
圖4. 17各溫度下Fe-doped InP反射頻譜………………………………54
圖4.18 ~ 4.25 InP放射頻譜……………………………………………55
圖4.26 各溫度下Fe-doped InP之折射參數……………………………58
圖4.27 各溫度下S-doped InP之折射參數……………………………58
圖4.28各溫度下Fe-doped InP之吸收係數……………………………59
圖4.29各溫度下S-doped InP之吸收係數……………………………60
圖4.30不同溫度下各InP之總放射率…………………………………61
圖4.31 ~ 4.38 SOI正面穿透頻譜………………………………………62
圖4.39 ~ 4.46 SOI背面穿透頻譜………………………………………65
圖4.47 ~ 4.49 SOI正反面穿透頻譜比較圖……………………………68
圖4.50 ~ 4.58 DTGS偵測器SOI正面反射頻譜………………………70
圖4.59 ~ 4.67 Si偵測器SOI正面反射頻譜……………………………73
圖4.68 ~ 4.76 SOI背面反射頻譜………………………………………76
圖4.67 ~ 4.85 SOI正面放射頻譜………………………………………80
圖4.86各溫度下SOI正反面總放射率之實驗與模擬數據比較圖……83
表目錄
表3-1 實驗用各晶圓規格比較表………………………………………36
表3-2大氣中主要氣體之能量吸收光帶………………………………40
表3.3 InP室溫下各波長穿透率誤差……………………………………45
表3.4 SOI室溫下各波長穿透率誤差……………………………………45

                                

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