本論文免除複雜的微影蝕刻步驟，利用間隙壁控制穿隧介電層的厚度來形成柵狀結構，進而完成三顆鍺量子點串連的穿隧二極體。當量子點之間的距離足夠靠近時，將會發生強烈的偶合效應而產生新的電子能階。本論文將量子點之間的穿隧介電層厚度控制在10 nm至18 nm之間。預期不僅可以看見明顯的偶合效應，且有助於提升穿隧電流的訊號/雜訊比。本論文成功地利用上述方法製作出三顆鍺量子點串連的穿隧二極體，且藉由變溫的電流─電壓曲線以及微分轉導─電壓曲線進行電性分析，進一步探討量子點內之量子效應。

In this thesis, we are able to form triple coupled Ge-QD tunneling diodes with controlled thickness (10 nm-18 nm) of tunneling barrier by way of forming spacer layers on patterned grating structure without complicated, advanced lithography and etching. Closely coupled QDs will rend strong quantum mechanics effects and conspicuous charge interaction wherein. We experimental characterized the current-voltage (I-V) and differential conductance-voltage (G-V) of the so-formed triple-QD RTD and investigated the charge coupling effect wherein.

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