直流磁控濺鍍氧化膜界面應力之研究｜國立中央大學博碩士論文系統

簡易檢索 / 詳目顯示

回結果列表

研究生：	李佳真 Chia-Chen Lee
論文名稱：	直流磁控濺鍍氧化膜界面應力之研究 Interface stress of oxidized films by DC magnetron sputtering deposition
指導教授：	李正中 Cheng-Chung Lee
口試委員:
學位類別：	碩士 Master
系所名稱：	理學院 - 光電科學與工程學系 Department of Optics and Photonics
畢業學年度：	97
語文別：	中文
論文頁數：	82
中文關鍵詞：	磁控濺鍍、軟性基板、界面應力、軟性電子
外文關鍵詞：	magnetron sputtering, flexible substrate, flexible electronic, interface stress
相關次數：	點閱：13 下載：0
分享至:	分享至facebook 分享至twitter

查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

近年來，軟性電子技術的發展為電子產業帶來重大的革命，尤其以軟性顯示器的發展最為迅速，其中軟性基板取代傳統玻璃基板使得消費型電子產品具備輕、薄、短、小的特色而更加便利人們的生活，但是使用軟性基板所衍生而來的應力問題更是極待去解決的一環。
本文以直流磁控濺鍍製鍍SiO2與Nb2O5單層膜以及多層膜堆疊在玻璃基板、PET及PC基板上。由硬性基板（玻璃）的薄膜應力理論出發，發展軟性基板的薄膜應力理論，輔以應力實驗量測來尋找最佳的製程參數使單層SiO2與Nb2O5薄膜之光學性質與應力能同時兼顧，此外也加以去探討SiO2/Nb2O5多層膜疊加後的應力變化與膜層間界面應力的關係，最後發展一套理論詮釋多層膜應力行為。
SiO2單層膜實驗最佳製程參數為電壓480 volt，氧氣通量11.1 sccm，相對應應力值為玻璃 -0.37 GPa；PET -0.22 GPa；PC -0.45 GPa。Nb2O5實驗最佳製程參數為功率0.6 kw 氧氣通量為15.3 sccm，相對應應力值為玻璃-0.12 GPa；PET -0.09 GPa；PC -0.18 GPa。在多層膜堆疊實驗發現在不同的基板有相同的趨勢，在SiO2/Nb2O5/sub的情況下界面應力會較Nb2O5/SiO2/sub小甚至有張應力的產生。

There has been much focus on flexible display technology, and people life become more convenient because of the flexible electronic technology develops fast recently. The flexible substrate substitution tradition glass substrate causes the expense electronic products to have lightweight, thin, the small characteristic but uses the flexible substrate to grow comes the stress question which is treats extremely solves.
The films of SiO2 and Nb2O5 have been deposited on the glass substrate and flexible substrate by DC magnetron sputtering. We develop residual stress theory of flexible substrate based on that of rigid substrate. In addition, we adjust the best parameters for optical constant and residual stress of SiO2 and Nb2O5 film on the glass substrate and flexible substrate. Finally, a simple model for interface stress of SiO2/Nb2O5 multilayer has been proposed.
The best parameter of SiO2 is voltage of 480 volt, oxygen flux of 11.1 sccm, and residual stress of -0.37 GPa, -0.22 GPa, -0.45 GPa on the glass, PET, PC substrate, respectively. The best parameter of Nb2O5 is power of 0.6 kw, oxygen flux of 15.3 sccm, and residual stress of -0.12 GPa, -0.09 GPa, -0.18 GPa on the glass, PET, PC substrate, respectively. There is the same trend of the result of multilayer that the smaller interface stress when SiO2/Nb2O5/sub multilayer.

摘要........................................................................................................................ i
Abstract .................................................................................................................ii
致謝......................................................................................................................iii
目錄...................................................................................................................... iv
圖目錄.................................................................................................................vii
表目錄................................................................................................................... x
第一章 緒論.................................................................................................. 1
1-1 前言........................................................................................................ 1
1-2 研究動機................................................................................................ 3
1-3 文獻回顧................................................................................................ 4
1-4 論文結構................................................................................................ 6
第二章 基本理論.......................................................................................... 8
2-1 前言........................................................................................................ 8
2-2 薄膜應力與界面應力定義................................................................... 8
2-3 硬性基板的薄膜應力......................................................................... 10
2-4 軟性基板的薄膜應力......................................................................... 13
2-5 界面應力.............................................................................................. 14
2-6 薄膜應力量測技術............................................................................. 16
第三章 實驗設備以及方法........................................................................ 18
3-1 磁控濺鍍（magnetron sputter deposition）機制[25]........................ 18
3-2 實驗設備.............................................................................................. 18
3-3 分析工具.............................................................................................. 20
3-3-1 可見光-近紅外光光譜儀[5] .................................................... 20
3-3-2 光學參數fitting 程式- 包絡法............................................... 20
3-3-3 相位偏移干涉儀...................................................................... 22
3-3-4 陰影疊紋架構(Shadow Moiré Method) .................................. 24
3-4 基板簡介.............................................................................................. 27
3-4-1 玻璃基板.................................................................................. 27
3-4-2 塑膠基板.................................................................................. 28
3-5 實驗目標及流程................................................................................. 31
第四章 實驗結果與討論............................................................................ 32
4-1 SiO2 單層膜.......................................................................................... 32
4-1-1 固定電壓450 volt.................................................................... 32
4-1-1-1 玻璃基板上的穿透率光譜及折射率表現.................. 33
4-1-1-2 不同通氧量對鍍率的影響........................................... 35
4-1-2 固定電壓480 volt.................................................................... 36
4-1-2-1 玻璃基板上的穿透率光譜及折射率表現.................. 36
4-1-2-2 不同通氧量對鍍率的影響........................................... 37
4-1-3 固定電壓500 volt.................................................................... 38
4-1-3-1 在玻璃基板上的穿透率光譜及折射率表現.............. 38
4-1-3-2 不同通氧量對鍍率的影響......................................... 40
4-1-4 固定電壓450,480,500 之比較................................................ 41
4-1-4-1 在玻璃基板上的穿透率光譜及折射率表現.............. 41
4-1-4-2 在PET及PC基板上的穿透率光譜............................. 42
4-1-4-3 Glass、PET及PC基板之薄膜應力分析.................... 43
4-2 Nb2O5 單層膜........................................................................................ 44
4-2-1 Nb靶材的遲滯效應.................................................................. 44
4-2-2 在玻璃上之穿透率光譜及光學常數...................................... 46
4-2-3 在PET上之穿透率光譜及光學常數....................................... 48
4-2-4 在PC（hard coat）上之穿透率光譜及光學常數.................. 50
4-2-5 Glass、PET及PC基板之薄膜應力分析............................... 52
4-3 多層氧化膜.......................................................................................... 53
4-3-1 玻璃基板.................................................................................. 53
4-3-2 軟性基板.................................................................................. 58
第五章 結論與未來展望............................................................................ 63
Conclusion........................................................................................................... 65
參考文獻............................................................................................................. 66

                                

[1] 吳駿逸,”不同製程下以Si 與SiO2 為起始材料所製鍍出的SiO2 薄膜特性研究”,中央大學,博士論文,民國95年。
[2] 陳錫釗,”二氧化鈦光學薄膜在熱回火過程的光學和機械特性之研究”,中央大學,博士論文,民國94年。
[3] 詹德均,“以氧離子束輔助磁控濺鍍光學薄膜之研究”,中央大學,博士論文，民國94年。
[4] 邱繼暐,“直流磁控濺鍍輔以氧離子助鍍光學薄膜於塑膠基板”,中央大學,碩士論文,民國93年。
[5] 王宣文,”以電漿表面預處理法在塑膠基板上製鍍抗反射膜”,中央大學,碩士論文,民國94年。
[6] Gregory P. Crawford, “Flexible Flat Panel Displays”, Wiley, Chapter12, 2005.
[7] 田春林,”光學薄膜應力與熱膨脹係數之研究”,中央大學,博士論文,民國89年。
[8] G. Gore, “On the Properties of Electro-deposited Antimony”, Trans. Roy. Soc. (London), Part 1, pp.185-197, (1858).
[9] E. J. Mills, “On Electrostriction”, Proc. Roy. Soc, 26, pp.504-512, 1877。
[10] G. G. Stoney, “The tension of metallic films deposited by electrolysis ” , Proc. Roy. Soc., A82, pp.172-175, 1909.
[11] K. G. Soderberg and A. K. Graham, “Stress in electro-deposits -Its significance”, Proc. Am. Electroplater’s Soc., 34, p.74, 1947.
[12] R. H. D. Barklie and H. J. Davies, “The effect of surface conditions and electrodeposited metal on the resistance of materials to repeated stress”, Proc. Inst. Mech. Eng., p.2731, 1930.
[13] J. A. Ruud, A. Witvrouw, and F. Spaepen, “Bulk and interface stresses in silver-nickel multilayered thin films”, J. Appl. Phys. 74, p.2517, 1993.
[14] Alison L. Shull and Frans Spaepen, “Measurements of stress during vapor deposition of copper and silver thin films and multilayer”, J. Appl. Phys. 80, p.6243, 1996.
[15] R. C. Cammarata, K. Sieradzki and F. Spaepen, “Simple model for interface stresses with application to misfit dislocation generation in epitaxial thin films”, J. Appl. Phys. 87, p.1227, 2000.
[16] F. Spaepen, ”Interface and stresses in thin films”, Acta mater. 48, pp31-42, 2000.
[17] R. W. Hoffman, ”physics of nonmetallic Thin Films”, edited by C. H. S. Dupuy and A. Cachard, Plenum Press: New York, p.273, 1976.
[18] K. L. Chopra, Mechanical effects in thin films, in Thin Film Phenomena, p.266, McGRAW-HILL : New York, 1969.
[19] H. S. Story, R. W. Hoffman, J. Appl. phys, 27, p193,1956.
[20] B. A. Movchan, A. V. Demchishin, ”Study of the structures and properties of thick vacuum condensates of nickel, titanium, tungsten, aluminum oxide and zirconium dioxide ”, Phys. Met. Metallorg., 28, p.83,1969.
[21] F. M. D’Hecurle, ”Aluminum films deposited by RF sputtering ”, Metallurgical Trans. I, pp.725-732, 1970.
[22] L. B. Freund, S. Suresh, ”Thin film materials : stress, defect formation and surface evolution ”, Cambridge, UK, chapter 2, 2003.
[23] G.C.A.M. Janssen, “Stress and strain in polycrystalline thin films”, Thin Solid Films, 515, pp.6654-6664, 2007.
[24] SCHOTT公司所提供之產品資料。
[25] 李正中,"薄膜光學與鍍膜技術",第五版,台北,藝軒圖書出版社, 2006。

簡易檢索 / 詳目顯示

相關論文