本論文主要研究下注入式垂直式發光電晶體，主要架構為氧化鋅電晶體上堆疊有機發光二極體。氧化鋅電晶體為上接觸/下閘極的結構，以透明導電膜為閘極，使用原子層沉積，沉積高介電係數的三氧化二鋁與氧化鉿作為雙層介電層，及N型材料氧化鋅作為半導體層，載子遷移率高達11-12 cm2/Vs。形成低驅動電壓、低接觸電阻及高電子流密度之橫向電晶體。將橫向電晶體源極與汲極接觸作為垂直式發光電晶體源極，以光阻墊高劑與光阻雙層結構，透過光學微影技術，在源極金屬上鍍製絕緣層氧化矽，抑制關電流密度，並有效提高開/關電流比。使用綠光有機材料PFO:F8BT作為發光層。以閘極電壓3V驅動，可得到高電流密度1 A/cm2及高開/關比105-106的下出光垂直發光電晶體，而外部量子效率也接近對應的有機發光二極體的外部量子效率。發光區可由光學微影將氧化鋅圖案化，明確定義發光面積，且能達到次微米等級，具有高開口率等優勢。

This thesis mainly studies on down-injection vertical light-emitting transistors (VLET) which is demonstrated by integration of a ZnO transistor and organic light-emitting diode (OLED). The zinc oxide transistor is a top-contact / bottom-gate structure, a transparent conductive film is used as a gate. Atomic layer deposition (ALD) is used to deposit aluminum oxide and hafnium oxide, which are the high dielectric constant material, as a double dielectric layers and N-type material zinc oxide as a semiconductor layer, the mobility is as high as 11-12 cm2 / Vs. Thus the lateral transistor has low driving voltage, low contact resistance and high electron current density. The source and the drain of the lateral transistor contact together as the source of VLET. With the double-layer structure of LOR and photoresist, through the optical lithography technology, an insulating layer of silicon oxide (SiOx) is deposited on the source to reduce the off-current density, and to improve the on / off current ratio. Use the green organic material PFO: F8BT as the light-emitting layer. Driven by a gate voltage of 3V, the bottom-emission vertical light-emitting transistor produces high current density 1A/cm2 and high on / off ratio 105-106, and the external quantum efficiency(EQE) is close to the EQE of corresponding OLED. The ZnO layer can be patterned by optical lithography to clearly define ligt emitting area, and can reach the sub-micron level, which has the advantages of high aperture ratio and so on.

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