為解決電子束微影技術中一些重要的問題，如：鄰近效應（proximity effect）、充電效應（charging effect），在電子束阻劑層上塗佈一層導電高分子，以電子束直寫系統對晶圓做直寫並進行研究。由塗佈導電高分子阻劑之感度曲線，發現對映比變佳，完全交聯能量變低。塗佈導電高分子試樣之製程窗口有明顯使線幅變細的趨勢。在曝光後延遲顯影24小時（PED 24 hr）方面，塗佈導電高分子試樣，其孤立線（isolated line）在某些能量範圍內仍可寫出圖形來。
本研究亦使用紅外線光譜儀與紫外光-可見光光譜儀，來測定經添加不同重量的poly (styrene-co-maleic anhydride)修飾NEB22之電子束阻劑。發現經修飾的阻劑其電子親和性物質並未改變，只有在主鏈上之聚合物結構稍有變化。使用n&k測厚儀、光學薄膜測厚儀、紅外線光譜儀與熱分析儀評估旋塗在晶圓上阻劑薄膜厚度特性，依續量測厚度、振動光譜和熱穩定性。分析結果顯示添加修飾劑之阻劑，並不會影響其熱穩定性。而在經修飾之電子束阻劑的抗電漿蝕刻上，所使用的電漿在ULSI應用上，是對多晶矽（poly Si）與二氧化矽（TEOS）進行蝕刻。結果發現可能是加入的修飾劑與電子束阻劑中的交聯劑作用，或是增加阻劑層的自由體積（free volume），造成電子束阻劑的抗蝕刻力變差。

The proximity and charging effects are the most important issues in electron beam lithography. This study applied the conducting polymer layer and modification technique to evaluate their technical possibility. In the over coating conducting polymer on the negative electron beam resist, it is found the better contrast and much lower cross-link energy according to the sensitivity curve. In the process window experiment, the samples have narrow line width. After post exposure delay for 24 hours (PED 24 hr), the isolated line in coating conducting polymer sample also can be achieved under proper energy ranges.
The modification of the electron-beam resist (NEB22) after spiking with various amounts of poly(styrene-co-maleic anhydride) is characterized by the spectra of Fourier Transfer infrared red (FTIR) and ultraviolet visible (UV-VIS). The chemical structure of electron affinity compound is found to be unchanged after modification, while slight change in the polymer chain is observed. The resist layer coated onto the wafer is characterized by various methods including n&k analyzer, nanospec, FTIR, and thermogravimetric analysis (TGA) to fully evaluate the film properties in term of thickness, vibrational spectrum, and thermal stability. The analysis results show that thermal stability of the modified sample will not be changed. The modified electron beam resist are also test their etching durability. The results show that the etching resistance of electron beam resist become slight degradation after spiking modified polymer. It may be attributed to reaction between the modifer and the melamine of electron beam resist. The other possible reason is the increasing of the free volume of the resist.

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