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| 研究生： |
王瑞慶 Ruan-Qing Wang |
|---|---|
| 論文名稱： |
砷化鋁鎵/砷化鎵異質接面雙極性電晶體之研製及壓控振盪器設計與製程 |
| 指導教授： |
辛裕明
Yue-Ming Hsin |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
資訊電機學院 - 電機工程學系 Department of Electrical Engineering |
| 畢業學年度： | 89 |
| 語文別： | 中文 |
| 論文頁數： | 93 |
| 中文關鍵詞： | 異質接面雙極性電晶體 、變容二極體 、本質接面雙極性電晶體 、單晶微波積體電路 、高頻壓控振盪器 |
| 外文關鍵詞： | AlGaAs/GaAs, self-aligned, non-self-aligned, MMIC, VCO |
| 相關次數： | 點閱：11 下載：0 |
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在VCO電路的應用上，利用在製作HBT的過程中基極及集極的p-n接面製作變容二極體，以達成異質接面雙極性電晶體及變容二極體的整合製程。此外HBT比本質接面雙極性電晶體( BJT )元件有更好的頻率響應，如此可設計出在單晶微波積體電路（MMIC）上之高頻壓控振盪器（VCO）。文中介紹了1.8 GHz與5.8 GHz VCO的設計與模擬，並量測 1.8 GHz VCO的量測特性為：Varactor 電壓為0時，輸出的頻率為2.1 GHz，輸出功率為0.43 dBm，相位雜訊為-76 dBc/Hz。
[1] Fresina, M.T.; Hartmann, Q.J.; Thomas, S.; Ahmari, D.A.; Caruth, D.; Feng, M.; Stillman, G.E. “InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication” Electron Device Meeting, pp. 207-210, 1996.
[2]Yue-Fei Yang, Chung-Chi Hsu, Edward S. Yang, Hai-Jiang Ou “A High-Frequency GaInP/GaAs Heterojunction Bipolar Transistror with Reduced Base-Collector Capacitance Using a Selective Buried Sub-Collector” IEEE Electron Device Letters, Vol. 17, NO.11, pp 531-533, Nov. 1996.
[3]W.L.Chen, H.F. Chau, M. Tutt, M. C. Ho, T. S. Kim, T. Henderson “High-Speed InGaP/GaAs HBT’s Using a Simple Collector Undercut Technique to Reduce Base-Collector Capacitance” IEEE Electron Device Letters, Vol.18, NO.7, pp 355-357, July 1997.
[4]S.M. SZE “High-Speed Semiconductor Devices” Wiley-Interscience, 1990.
[5]WILLIAM LIU “HANDBOOK OF III-V HETEROJNCTION BIPOLAR TRANSISTORS” Wiley-Interscience, 1998.
[6]S. M. Sze “Physics of Semiconductor Devices” John Wiley & Sons Central Book Company, 1981.
[7]W. Scot Ruska, “MICROELECTRONIC PROCESSING” McGraw-Hill Book Company.
[8]David R. Pehlke and Dimitris Pavlidis, “Evaluation of the Factors Determining HBT High-Frequency Performance by Direct Analysis of S-Parameter Data” IEEE Transactions On Microwave Theory And Techniques, Vol. 40. NO. 12. December 1992.
[9]Yoshiki Yamauchi, Hideki Kamitsuna, Masashi Nakatsugawa, “A 15-GHz Monolithic Low-Phase-Noise VCO Using AlGaAs/GaAs HBT Technology” IEEE Journal Of Solid-State Circuits. VOL. 27. NO. 10. October 1992.
[10]Guillermo Gonzalez “Microwave Transistor Amplifiers” Prentice Hall 1997.
[11]David M. Pozar “Microwave Engineering” Addison-Wesley Publishing Company 1990.
[12]Konstantin A. Kouznetsov and Robert G. Meyer “Phase Noise in LC Oscillators” IEEE Journal Of Solid-State Circuits. Vol. 35. No. 8. August 2000.
[13]Nhat M. Nguyen, Student Member, “A 1.8GHz Monolithic LC Voltage-Controlled Oscillator” IEEE Journal Of Solid-State Circuits. Vol. 27. NO. 3. March 1992.
[14]Markus Zannoth, Bernd Kolb, Joseph Fenk, and Robert Weigel, “A Fully Integrated VCO at 2 GHz” IEEE Journal Of Solid-State Circuits. Vol. 33. NO. 12. December 1998.
[15]John W. M. Rogers, Strudent Member, “The Effect Of Varactor Nonlinearity on the Phase Noise Of Completely Integrated VCOs” IEEE Journal Of Solid-State Circuits. Vol. 35. NO. 9. September 2000.
[16]本城 和彥 “微波通訊半導體電路” 全華科技圖書股份有限公司 1996.
