由於形成基極接面後的製程並無高溫製程，基極接面深度可控制在很淺的範圍，預期可以得到一低製作成本的高速元件。
本研究的另一主題是結合非晶質薄膜與有機聚合物發光材料研製有機發光二極體(PLED)。元件結構係以P-型非晶質矽膜(p-a-Si:H)取代傳統的聚合物電洞注入層，並以N-型非晶質鍺化矽碳膜(n-a-SiCGe:H)作為電子注入層。在N-型非晶質鍺化矽碳膜中含高成分鍺的PLED，其臨限電壓為14.3 V，而當電流密度為 300 mA/cm2時，發光亮度可達6450 cd/m2。

Also, the EL (electroluminescence) characteristics of the polymer LEDs (PLEDs) having amorphous carrier injection layers had been investigated. The p-a-Si:H and n-a-SiCGe:H films were used as the hole and electron injection layers, respectively in these in these PLEDs to replace the conventional organic carrier injection layers. A peak brightness of 6450 cd/m2 at an injected cur

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