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研究生： 余泰榮
Tai-Rong Yu
論文名稱： 交流白光非晶碳氫與氮化矽氫薄膜發光二極體之研製
Design and Fabrication of a-C:H and a-SiN:H Alternating-Current White Thin-film Light-Emitting Diodes
指導教授： 洪志旺
Jyh-Wong Hong
口試委員:
學位類別： 碩士
Master
系所名稱： 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度： 94
語文別： 英文
論文頁數： 73
中文關鍵詞： 氮化矽氫 、交流 、薄膜發光二極體 、白光 、非晶碳氫
外文關鍵詞： white light, alternating-current, TFLED, amorphous SiN, amorphous carbon
相關次數： 點閱：13  下載：0 
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    • 本研究的主要目的是研製交流白光非晶質薄膜發光二極體。在現階段，我們成功地運用一層很薄的本質非晶碳氫或氮化矽氫做為發光層，且利用PECVD系統在位氫電漿處理發光層薄膜，提高薄膜中的氫含量以及修補懸鍵，進而改善元件發光效率。實驗結果顯示，適當的氫電漿處理確實能有效改善元件特性，大幅提升元件發光效率。同時我們也對元件電性做一系列量測，包括發光亮度、發光頻譜以及交流頻率響應等。量測結果顯示，不同大小的電壓幾乎不會改變發光波段，但是隨著交流頻率的增加卻會導致發光頻譜出現紅移的現象。

    The alternating-current (AC) white amorphous thin-film light-emitting diodes have been designed and fabricated in this study. We had successfully used the very thin i-a-C:H (device 1) and i-a-SiN:H (device 2) films as the luminescent layer individually and applied in-situ hydrogen plasma treatment on film to increase its hydrogen concentration, passivate the dangling bonds in the film and hence improve device optoelectronic characteristics. From the experiment results, it was evident a proper hydrogen plasma treatment process could be used to improve the device performance. In addition, a series of measurements including brightness, electroluminescence (EL) spectrum, and frequency response had been taken to investigate the device characteristics. The results showed that the peak wavelength of device EL spectrum was almost independent of the applied-voltage. However, the EL spectrum would be red-shifted with the increasing AC frequency.

    Chapter 1 INTRODUCTION………………………………………………………………………1 Chapter 2 EXPERIMENTAL PROCEDURES…………………………………………………………3 2.1 Preparations of Various Thin-Films……………………………………………………3 2.1.1 Deposition System……………………………………………………………3 2.1.2 Depositions of a-Si:H, a-SiC:H, a-C:H, and a-SiN:H Films………3 2.2 Device Synopsis…………………………………………………………………8 2.3 Device Fabrication……………………………………………………………13 2.4 Measurement Techniques………………………………………………………15 2.4.1 Optical Bandgap of Amorphous Film…………………………15 2.4.2 EL Intensity and Brightness…………………………………15 2.4.3 EL Spectrum and Frequency Response………………………15 2.4.4 Brightness Under Alternating-Current Operation………16 2.4.5 Electrical Circuit of Output Buffer………………………16 Chapter 3 RESULTS AND DISCUSSION…………………………………………………………22 3.1 Device 1 with i-a-C:H luminescent layer……………………………………………22 3.1.1 Effects of H2-plasma treatment on i-a-C:H or carbon-decreasing layer…22 3.1.2 EL Spectrum………………………………………………………………………………30 3.1.3 Measurement for AC Frequency Response……………………………………………34 3.2 Device 2 with i-a-SiN:H luminescent layer……………………………40 3.2.1 Effects of H2-plasma treatment on i-a-SiN:H layer……40 3.2.2 EL Spectrum………………………………………………………40 3.2.3 Measurement for AC Frequency Response……………………47 Chapter4 CONCLUSION…………………………………………………………………………54 REFERENCES………………………………………………………………………………………56

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