本論文利用微機電製程，研究製作性能良好的壓電元件，首先將鋯鈦酸鉛溶液旋塗在微懸臂樑，以不同的軟硬烤溫度及不同的退火方式，利用溶膠凝膠法(sol-gel method)將壓電薄膜旋轉塗佈在元件上。薄膜品質利用X光繞射、鐵電分析及光學顯微鏡等量測方式來判斷，由於面積較大的薄膜試片容易產生缺陷而造成短路，所以採取小面積的方式來製作，使缺陷變少。
由光學顯微鏡判斷出的薄膜品質，以編號1、2的參數表現最好，這兩個參數分別是軟硬烤150 ℃(5 分鐘)/250 ℃(10 分鐘)/快速退火600 ℃(1 分鐘)、650 ℃(1 分鐘)/高溫爐退火600 ℃(12 分鐘)、650 ℃(12 分鐘)，再比較X光繞射儀的峰值大小，我們可以發現，退火600 ℃的峰值最高，650 ℃居中，700 ℃最低。最後，比較鐵電分析儀量測出的殘餘極化量值，以相同的去水相與熱烈解的溫度下，再經過上述的快速退火與兩階段高溫爐退火溫度後，特性表現也較好。綜合以上討論，編號1、2的參數，最適合製作壓電薄膜。
微懸臂樑面積設計為1000x2000 μm2，並利用雷射位移感測器(keyence LK-H150) ，在光學桌上使用訊號產生器來調頻找出懸臂樑的共振頻率及震動模態。

In this thesis, MEMS (Microelectromechanical Systems) device was designed and fabricated. Sol-gel PZT was spun on the micro cantilever by using various baking and annealing conditions. The thin film quality was optimized by using XRD, ferroelectric analyzer, and optical microscope. Since thin film of larger area tends to have cracks and cause short circuit problem, device of small area was used to improve the performance of MEMS device.
The following steps were taken to examine the quality of the films. First, optical microscope was used to distinguish the quality of the films. Among all, sample No. 1 and No. 2 have better performance. Sample No.1 was prepared with drying and pre-baking at 150 °C for 5 minutes and 250 °C for 10 minutes, rapid annealing at 600 °C for 1 minute, and furnace annealing at 350 °C for 10 minutes and 600 °C for 12 minutes. Sample No.2, has the same parameter as sample No.1., except that the rapid annealing temperature and the furnace annealing temperature were 650 °C. Second, the X-ray diffraction was used to find out the crystal orientation. Finally, the remanent polarization of each sample was measured with the ferroelectric analyzer. The results indicated that the characterizations of sample No. 1and 2 were relatively better than those of the others.
The size of the micro-cantilever was chosen to be 1000x2000 μm2. To measure the resonance frequency of the micro-cantilever, the laser displacement meter(KeyenceLK-H150) was utilized.

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