矽晶圓批量清洗中清洗槽內的流體流動情形極為重要，流體的流動情形影響了矽晶圓的潔淨度，矽晶圓潔淨度也影響了後續製程以及產品最後的良率，故為了瞭解清洗槽內流體流動情形，建立數值模型，透過數值模型深入探討，並嘗試最佳化清洗槽。
關於顆粒附著在晶圓表面上的去除機理較少文獻探討，因此本研究首先詳細解釋顆粒吸附在晶圓表面上所有的力，以及如何利用流體去除顆粒，再提出一種新穎的驗證模擬有效性的方法，此方法是透過顆粒去除機理分別計算矽顆粒(Si)與二氧化矽顆粒(SiO2)剪應力理論值3.190×〖10〗^(-3) Pa與6.387×〖10〗^(-4) Pa，再搭配現有的顆粒殘留分布與模擬結果的晶圓表面剪應力做比對，確定該數值模型的有效性，接著詳細探討清洗槽內流體流動情形，並詳加說明，再透過此模型進行流量改變以及幾何的改變，透過上述研究確立了，改變清洗槽部件的幾何是一種有效最佳化清洗槽內流動的方式。

In the batch cleaning of silicon wafers, the fluid flow in the cleaning tank is important. It affects the cleanliness of the silicon wafer, the subsequent production process, and the final product yield. In order to analyze the fluid flow in the cleaning tank, we build a numerical model to investigate in depth, and try to optimize the cleaning tank.
There is a lack of information about removal mechanism of particles attached to the wafer surface. Therefore, this study first explains all the forces of particle attached on wafer surface, and how to remove particles by fluid flow. And then proposes a novel method to verify the effectiveness of the simulation. It aims to calculate the theoretical value of the shear stress through the particle removal mechanism. Next, we compare that with the existing particle residual distribution and the simulation result of the wafer surface shear stress, to determine the validity of the numerical model. After that, we discuss fluid flow situation in the cleaning tank and give a detailed explanation. Finally, we change the flow rate and geometry in this model to figure out which way is benefit for batch cleaning. By altering different parameters mentioned above, we conclude that changing the geometry of the cleaning tank components is an effective way to optimize the cleaning efficiency.

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