從1965年至今，摩爾定律預言的準確度已經持續了超過半個世紀，預計將持續到2020年，關鍵在於微影製程(lithography)技術，而微影製程後的光阻或汙染物清洗也非常重要，但清洗完成後需要大量的超純水清洗，因此會產生大量的有機廢液，這些廢液會汙染環境且對人體健康有害。
隨著環保意識的抬頭，加上未來製程上將朝向更低線寬與更高深寬比元件邁進，傳統濕式清洗製程面臨有機清洗液與晶圓界面間之表面張力極限問題，導致此清洗液無法適用於小尺寸溝渠內污染物的清洗，90年代開始，新技術逐漸被研發出來，來取代傳統清洗製程上有機溶劑的使用。
超臨界二氧化碳清洗製程、臭氧水溶液去光阻製程也隨即被發展出來，有機溶劑也為了基底材料而不斷去做改善，在溶劑的配方上也不斷朝向使用低腐蝕性的溶劑或者添加抗蝕劑。而這些清洗技術也能夠搭配超音波(Ultrasonic)輔助，更能增加對光阻及其他汙染物的清除效率。

From 1965 to now, Moore's Law has been continued for more than half a century. It estimate that can continue to 2020. The key point is in the lithography process. After the lithography process, the photoresist and others contamination removing is also very important. But the wafers need lots of DI water to rinse them. It makes lots of organic waste liquid, it will pollute the environment and harmful to human health.
As the length scale of semiconductor devices advances to nanometer range, via structures and high aspect ratio, the effective penetration of aqueous will be more arduous. The other hand, the environmental awareness rise. New technology has been invented to replace traditional cleaning process since 1990.
Supercritical carbon dioxide and DIO3 stripping process have been invented. The formulation of organic solvent were also improved for the wafer substrate material. These washing techniques can also work with ultrasonic assistance, it could increase photoresist and other contaminants removal efficiency.

[1] 王彥評，國立中正大學化學工程所，「電漿輔助超臨界二氧化碳清洗光阻技術之應用」，碩士論文(2006)
[2] 工研院能資所，「省水是臭氧光阻去除技術」，徐靜怡、陳秋美、金光祖。
[3] 新世代溶液中奈米微粒監控系統”Supersizer” - 工研院開放式創新系統平台
[4] CN104946429，「一種低蝕刻去光阻劑」，安集微電子科技(上海)有限公司，何春阳, 刘兵, 孙广胜, 黄达辉。
[5] 丁耀柏，國立清華大學，「以超臨界流體去除晶圓上的光阻」，碩士論文(2005)
[6] 義守大學，微影製程教學檔案
[7] Intel，微影技術藍圖，2002年
[8] Leisa B.Davenhall, et al., Composition and method for removing photoresist materials from electronic components, United States Patent 6,403,544, June 2002
[9] 台超萃取洗淨精機股份有限公司，超臨界流體技術
[10] Gina L. Weibel, Christopher K. Ober, " An overview of supercritical CO2 applications in microelectronic processing", Microelectronic Engineering 65 (2003) 145–152
[11] L. Williams, "Application of Hansen Solubility Parameter Methodology To Supercritical Carbon Dioxide And Its Mixtures With Solvents" paper at Nordic Polymer Days 2003 Solubility Parameter Symposium (Aug. 2003)
[12] Chang Dae Han , “Rheology and Processing of Polymeric Materials: Volume 1: Polymer Rheology”, pp.639-640
[13] Rubin, J. B.; Davenhall, L. B.; Taylor, C. M.; Sivils, L. D.; Pierce T., “CO2-Based Supercritical Fluids as Replacements for Photoresist-Stripping Solvents”, Los Alamos Nation Lab. 1998
[14] Sung Ho Kim , Haldorai Yuvaraj , Yeon Tae Jeong , Chan Park , Sok Won Kim , Kwon Taek Lim, “The effect of ultrasonic agitation on the stripping of photoresist using supercritical CO2 and co-solvent formulation”, Microelectronic Engineering 86 (2009) 171–175.
[15] CN102157357B 「半导体硅片的清洗方法」，张晨骋，上海集成電路研發中心有限公司，2016
[16] 金光祖, 陳秋美, 羅正忠. 2002. 臭氧水技術在光阻去除製程之應用. 電子月刊 8(9): 128-133.
[17] 萬能科技大學，環境工程系，「臭氧在水處理中之應用」，李中光，劉新校，邱惠敏
[18] 崑山科技大學 環境工程系，「臭氧氧化對氯苯甲酸(pCBA) 第一部分：pCBA 反應動力參數探討」，陳信吉、莊宏仁、廖明浩、曹盛翔 王世毅、許舜凱(2006)
[19] Nelson, S., and Carter, L. E., “A Process Using Ozonated Water Solutions to Remove Photoresist after Metallization,” Solid State Phenomena 65-66,pp. 287-290, 1999.
[20] Nelson, S., L. “Ozonated Water for Photoresist Removal”, Solid State Technol., Vol 42, pp. 107-112, 1999.
[21] 陳志偉，國立交通大學電子所，「以臭氧去除光阻的機制研究」碩士論文(2003)
[22] Abe, H., H. Iwamoto, T. Toshima, T. Iino, G. W. Gale. 2003. Novel photoresist stripping technology using ozone/vaporized water mixture. IEEE Transactions on Semiconductor Manufacturing 16(3): 401-408
[23] 邵明哲，以臭氧氣泡去光阻可行性之研究，碩士論文，東海大學，環境科學系(2004).
[24] CN1605367A，「使用气泡的基材表面处理方法及设备」，金光祖、陳秋美、羅正忠、徐靜怡、法漢恩·夏得曼，2005
[25] Min-Su Kim, Bong-Kyun Kang, Manivannan Ramachandran, Jae-Kwan Kim, Byung-Kyu Lee, Jin-Goo Park,” Removal of UV-cured resin using a hybrid cleaning process for nanoimprint lithography”, Microelectronic Engineering 114 (2014) 126–130
[26] 弘塑科技股份有限公司，乾膜光阻去除
[27] R Massey, N Wood , J Huang , “Developments in Fine Line Resist Stripping”
[28] Y. Wu, C. Franklin, M. Bran and B. Fraser , “ACOUSTIC PROPERTY CHARACTERIZATION OF A SINGLE WAFER MEGASONIC CLEANER”, VERTEQ, Inc., Santa Ana, CA 92705
[29] Cole Franklin, “Megasonic Agitation Allows Removal of Chemically Amplified Photo-resists”, Akrion Systems LLC, 6330 Hedgewood Drive Allentown, PA 18106, USA
[30] Ching-Yi Chu, Te-Jung Hsu, Tzu-Hsing Chiang, Yung-Ming Wang, Shiu-Chin Wang, Ping-Feng Yang, Jen-Kuang Fang, ” Development of New Photoresist Stripping Agent”, IEEE Catalog Number: CFP1459B-ART ISBN: 978-1-4799-7727-7
[31] 專利CN104946429A，「一種低蝕刻去光阻劑」，何春阳、刘兵、孙广胜、黄达辉(2014)
[32] 國立交通大學奈米中心儀器設備網站
[33] THE KAITEKI COMPANY 三菱化学控股集团網站
[34] 科技新報，「台積電晶圓良率提升的秘密武器-奈米微粒監控系統」(2015)
[35] 維基百科，Moore's law
[36] EET電子工程專輯，KLA-­Tencor提供高效率晶圓檢測系統(2014)
[37] ITRI 3DIC 之半導體製程技術評估報告(2008)