本論文的內容為壓控振盪器相位雜訊生成機制之探討與低雜訊放大器之實作。在相位雜訊探討的部分，是以時變系統的觀點分析振盪電路中各雜訊源對相位雜訊的影響，並且以實作的量測結果驗證本論文對相位雜訊的論述。使用TSMC CMOS 0.18-μm 製程實現的振盪電路包括(1)互補式交錯耦合壓控振盪器，振盪中心頻率為5.2 GHz，可調頻率範圍633 MHz，偏移主頻1 MHz 之相位雜訊為-120.2 dBc/Hz，優化指數(FOM)為-185.3 dBc/Hz；(2)雜訊平移考畢茲(Colpitts)壓控振盪器，振盪中心頻率為12.6 GHz，可調頻率範圍227 MHz，偏移主頻1 MHz 之相位雜訊為-110.3 dBc/Hz，優化指數(FOM)為-182.74 dBc/Hz；(3)低功率消耗雙變壓器耦合壓控振盪器，振盪中心頻率為12.8 GHz，可調頻率範圍136 MHz，偏移主頻1MHz 之相位雜訊為-97.08 dBc/Hz，功率消耗為0.6 mW，優化指數為-181.53 dBc/Hz 。
隨著越來越多的無線傳輸應用，現今對大量資料傳輸系統的需求已經變的更加迫切，使得我們需要更高的資料傳輸速率系統規範，因此在通訊系統規格也將載波頻率提升換取更大的頻寬，其中一個例子為K-頻段802.16 WMAN 的系統規格，因此在本論文中實現K-頻段的低雜訊放大器，並運用變壓器負回授的方式來中和閘極與汲極間電容的效應，使得在低頻的最佳雜訊設計方式在K-頻段也可適用。使用TSMC CMOS 0.18-μm 製程實現的低雜訊放大器包括(1)變壓器回授的三級低雜訊放大器，在26 GHz 有最大增益約為9.2 dB，雜訊指數為6.9dB，IIP3 及P1dB 分別為-2 dBm 及-11 dBm，功率消耗為 64 mW；(2) 變壓器回授的三級低雜訊放大器，在25.8 GHz 有最大增益約為10 dB，雜訊指數為4.84dB，IIP3 及P1dB 分別為-5 dBm 及-17.8 dBm，功率消耗為 25.8 mW。

The content of this thesis is about phase noise mechanism in voltage controlledoscillator (VCO) and implementation of K-band low noise amplifier (LNA). Thetime-varying concept is used to analyze the phase noise caused by various noisesources in the circuits. The measurement results of the implemented VCO ensure thevalidity of the mentioned notion in this thesis. TSMC 0.18-μm CMOS technology isadopted to implement the following circuits; (1) Complemently cross couple VCO.The oscillation frequency is 5.2 GHz, tuning range is 633 MHz, phase noise is -120.2dBc/Hz at 1MHz offset, and -185.3 dBc/Hz of Figure-of-Merit (FOM); (2) Thesecond circuit is a noise-shifting Colpitts VCO. The oscillation frequency is 12.6 GHz,tuning range is 227 MHz, phase noise is -110.3 dBc/Hz at 1 MHz offset, and -182.74dBc/Hz of FOM; (3) The third circuit is a tripilar coupling VCO. The oscillationfrequency is 12.8 GHz, tuning range is 136 MHz, phase noise is -97.08 dBc/Hz at1MHz offset, and FOM is -181.53 dBc/Hz.
Due to the rapid development of wireless communication system, largerbandwidth and higher speed are required. In order to achieve the wide bandwidth,higher frequency communication standard become a necessary trend in recent years.For instance, the application of wireless broadband networks in IEEE 802.16 standardis wireless metropolitan area network (WMAN). Therefore, the K-band LNAs areimplemented in this thesis. In order to confirm the validity of the transistor widthoptimization method, the transformer feedback technique is employed to neutralize the gate-drain overlap capacitance. TSMC 0.18-μm CMOS technology is adopted toimplement the following LNAs; (1) A 26 GHz transformer feedback three cascadestages low noise amplifier achieved a power gain of 9.2 dB, a noise figure of 6.9 dB.The 1-dB gain compression point and the input third-order intercept point are -11dBm and -2 dBm, respectively, and total power consumption is 64 mW. (2) A 25.8GHz transformer feedback three cascade stages low noise amplifier achieved a powergain of 10 dB, 4.84 dB noise figure. The 1-dB gain compression point and the inputthird-order intercept point are -17.8 dBm and -5 dBm, respectively, and total powerconsumption is 25.8 mW.

[1] D. B. Lesson, ”A Simple Model of Feedback Oscillator Noise Spectrum,” Proc.IEEE, vol. 54, issue 2, pp. 329-330, Feb. 1966.
[2] F. X. Kaerther, “Determination of the Correlation Spectrum of Oscillators with Low Noise,” IEEE Trans. Microwave Theory Tech. vol. 37, issue 2, pp 90-101, Jan.1989.
[3] B. Razavi,”A Study of Phase Noise in CMOS Oscillator,” IEEE J. of Solid-State Circuits, vol. 31, no. 3, pp. 331–343, March 1996.
[4] A. Hajimiri and T. H. Lee, “A General Theory of Phase Noise in Electrical Oscillators,” IEEE J. of Solid-State Circuits, vol. 33, no. 2, pp. 179–194, February 1998.
[5] Qiuting Huang, “On the Exact Design of RF oscillators,” IEEE Custom Integrated Circuits Conference, pp. 41-44, May 1998.
[6] Qiuting Huang, “Phase Noise to Carrier Ratio in LC Oscillators,” IEEE Trans. on Circuits and Systems-I: Fundamental Theory and Applications, vol.47, no.7, pp. 965-980 July 2000.
[7] J. J. Rael and A. A. Abidi, “Physical Processes of Phase Noise in Differential LC Oscillators,” IEEE Custom Integrated Circuits Conference, pp. 569-562, 2000.
[8] P. Smulders, “Exploiting the 60 GHz Band for Local Wireless Multimedia Access: Prospects and Future directions”, IEEE Commun. Mag., Vol. 2, No. 1, pp. 140-147, Jan. 2002.
[9] Federal Communications Commission, “Amendment of Parts 2, 15 and 97 of the Commission''s Rules to Permit Use of Radio Frequencies Above 40 GHz for New Radio Applications”, FCC 95-499, ET Docket No. 94-124, RM-8308, Dec. 15, 1995.
[10] L. Dai, R. Harjani, Design of High-Perfoemance CMOS Voltage-Controlled Oscillators, Kluwer Academic Publishers, 2003.
[11] B. Razavi, RF Microelectronics, Prentice Hall, Inc.1998.
[12] T. H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge University Press, 2004.
[13] F. M. Gardner, “Charge-Pump Phase-Locked Loop,”IEEE Trans. Comm., vol.com-28, pp.1849-1858, Nov. 1980.
[14] E. J. Baghdady, R. N. Lincoln, and B. D. Nelin, “Short-Term Frequency Stability: Characterization, Theory, and Measurement,” Proc.IEEE, vol. 53, pp 704 -722, July 1965.
[15] L. S. Culter and C. L. Searle, “Some Aspects of the Theory and Measurement of Frequency Fluctuations in Frequency Standards,” Proc.IEEE, vol. 54, pp.136-154, Feb. 1966.
[16] A. Hajimiri and T. H. Lee, The Design of Low Noise Oscillators, Kluwer Academic Publishers, 2002.
[17] Y. Ou, N. Barton, R. Fetche, N. Seshan, T. Fiez, U. Moon, and K. Mayaram, “Phase Noise Simulation and Estimation Methods : A Comparative Study,” IEEE Trans. on Circuits and Systems-II: Analog and Digital Signal Processing, vol.49, no.9, pp. 635-638, Sept. July 2002.
[18] M. Grozing, T. Stumpf, S. Hanger, andM. Betroth, “MOSFET thermal- and 1/f-noise modulating functions for the impulse sensitivity function theory of oscillator phase noise,” Microwave Conference, vol. 2, pp. 949-952, Oct. 2004.
[19] A. Hajimiri and T. H. Lee, “Design Issues in CMOS Differential LC Oscillators,” IEEE J. of Solid-State Circuits, vol.34, no. 5, pp.717–724, May 1999.
[20] B. Soltanian and P. R. Kinget, “Tail Current-Shaping to Improve Phase Noise in LC Voltage-Controlled Oscillators” IEEE J. of Solid-State Circuits, vol. 41, no. 8, pp.1792–1802, Aug. 2006.
[21] P. Andreani and A. Fard, “More on the 1/f2 Phase Noise Performance of CMOS Differential-Pair LC-Tank Oscillators” IEEE J. of Solid-State Circuits, vol. 41, no. 12, pp.2703–2712, Dec. 2006.
[22] E. Hegazi ,H. Sjöland, and A. A. Abidi, “A Filtering Technique to Lower LC Oscillator Phase Noise” IEEE J. of Solid-State Circuits, vol. 36, no. 12, pp.1921–1930, Dec. 2001.
[23] P. Andreani and H. Sjöland, “Tail Current Noise Suppression in RF CMOS VCOs” IEEE J. of Solid-State Circuits, vol. 37, no. 3, pp.342–348, March 2001.
[24] P. Andreani , X. Wang , L. Vandi , and A. Fard “A Study of Phase Noise in Colpitts and LC-Tank CMOS Oscillators,” IEEE J. of Solid-State Circuits, vol. 40, no. 5, pp. 1107-1118, May 2005.
[25] Zhenbiao Li and O. K. K., ”A Low-Phase-Noise and Low-Power Multiband CMOS Voltage Controlled Oscillator,” IEEE J. of Solid-State Circuits, vol. 40, no. 6, pp. 1296-1302, June 2005.
[26] C. M. Hung, B. Floyd, and K. K. O, “A Fully Integrated 5.35-GHz CMOS VCO and a Prescaler,” IEEE Trans. Microwave Theory Tech., vol. 49, no.1, pp. 17–22, Jan. 2001
[27] T. Y. Kim, A. Adams, and N. Weste, “High Performance SOI and Bulk CMOS 5 GHz VCO’s,” in IEEE Radio Frequency Integrated Circuits Symp. Dig. Papers, Philadelphia, PA, pp. 93–96, Jun.2003.
[28] N. Fong, J. Plouchart, N. Zamdmer, D. Liu, L. Wagner, C. Plett, and N. Tarr, “Design of wide-band CMOS VCO for multiband wireless LAN applications,” IEEE J. of Solid-State Circuits, vol. 38, no. 8, pp.1333–1342, Aug. 2003.
[29] B. Min and H. Jeong, “5-GHz CMOS LC VCOs With Wide Tuning Ranges,” IEEE Microwave and Wireless Component Letter, vol. 15, issue 5, pp. 336-338, May 2005.
[30] B. Razavi, Design of analog CMos Integrated Circuits, McGraw-Hill, Inc.2001.
[31] R. Aparicio and A. Hajimiri, “A Noise-Shifting Differential Colpitts VCO,” IEEE J. of Solid-State Circuits, vol. 37, no. 12, pp. 1728-1736, Dec. 2002.
[32] K. Kwok and H. C. Luong, “ Ultra-Low- Voltage High-Performance CMOS VCOs Using Transformer Feedback” IEEE J. of Solid-State Circuits, vol. 40, no. 3, pp.652-660, March 2005.
[33] Taeksang Song, Sangsoo Ko, Dae-Hyung Cho, Han-Su Oh, Chulho Chung, and Euisik Yoon, “A 5GHz transformer-coupled CMOS VCO using bias-level shifting technique,” IEEE Radio Frequency Integrated Circuits Symposium, pp.127-130, June 2004.
[34] L. Jia, J.-G. Ma, K. S. Yeo, and M. A. Do, “9.3-10.4-GHz-Band Cross-Coupled Complementary Oscillator With Low Phase-Noise Performance,” IEEE Trans. Microw. Theory Tech., vol. 52, no. 4, pp. 1273–1278, Apr. 2004.
[35] T. K. K. Tsang and M. N. El-Gamal, “A High Figure of Merit and Area-Efficient Low-Voltage (0.7-1V) 12GHz CMOS VCO,” IEEE Radio Frequency Integrated Circuits Symposium., pp. 89-92, June 2003.
[36] N.-J. Oh and S.-G Lee, “11-GHz CMOS Differential VCO With Back-Gate Transformer Feedback,” IEEE Microwave and Wireless Components Letters, vol. 15, no. 11, pp.733–735, Nov. 2005.
[37] S. Lo and S. Hong, “Noise Property of a Quadrature Balanced VCO,” IEEE Microwave and Wireless Components Letters, vol. 15, no. 10, pp.673–675, Oct. 2005.
[38] David J. Cassan and John R. Long, “A 1-V Transformer-Feedback Low-Noise Amplifier for 5-GHz Wireless LAN in 0.18-um CMOS,” IEEE J. of Solid-State Circuits, vol. 38, no. 3, pp. 427-435, March 2003.
[39] Derek K. Shaeffer, Student Member, IEEE, and Thomas H. Lee, Member, IEEE, “A 1.5-V, 1.5 GHz CMOS Low-Noise Amplifier ,” IEEE J. of Solid-State Circuits, vol. 32, no. 5, pp. 745-759, May 1997.
[40] Trung-Kien Nguyen, Chung-Hwan Kim, Gook-Ju Ihm, Moon-Du Yang, and Sang-Gug Lee ,“CMOS Low-noise Amplifier Design Optimization Techniques” IEEE Trans. Microwave Theory Tech., vol. 52, no. 5, pp. 1433-1442, May 2004.
[41] M. Egels , J. Gaubert and P. Pannier , “High Frequency LNA in Standard CMOS process ,” Circuits and Systems, June 2006.
[42] Guan X. and Hajimiri A.; “A 24-GHz CMOS Front End”, IEEE J. of Solid-State Circuits, vol. 39, no. 2, pp 368-373, Feb.,2004.
[43] Shin S.-C.; Tsai Ming-Da; Liu Ren-Chieh; Lin K.-Y.; Wang Huei; “A 24-GHz 3.9-dB NF Low-Noise Amplifier Using 0.18 µm CMOS Technology”, IEEE Microwave and Wireless Component Letter, vol. 15, no. 7, pp. 448-450, July 2005.
[44] Yu Kyung-Wan; Lu Yin-Lung; Chang Da-Chiang ; Liang, V. ; Chang, M.F.; “K-band Low-Noise Amplifiers Using 0.18 µm CMOS Technology”, IEEE Microwave and Wireless Component Letter, vol. 14, no. 3, pp. 106-108, March 2004.
[45] L. M. Franca-Neto, B. A. Bloechel, and K. Soumyanath, “17 GHz and 24 GHz LNA Designs Based on Extracted-S-Parameter with Microstrip- on-Die in 0.18 μm Logic CMOS Technology,” Eur. Solid-State Circ., pp. 149–153, 2003.
[46] 李金龍, “雜訊消除放大器與寬頻矩陣型分佈式放大器暨壓控振盪器之研製,” 碩士論文, 國立中央大學, 2006。
[47] 鄒育霖, “Ka與V頻段低相位雜訊雙推式振盪器之研製”, 碩士論文, 國立中央大學, 2006。
[48] 曾卿銘, “3.1~10.6 GHz超寬頻接收機前端電路之研究”, 碩士論文, 國立中央大學, 2006。