本實驗利用傳統粉末冶金的方式，先將ITO及WO3材料粉末混合，再以乾壓成型法壓錠，然後以高溫爐煅燒，最後以電子束蒸鍍法，將燒好後不同組成之(ITO+WO3)靶材沉基於美國奇異高純度石英片上，探討隨著WO3添加量的增加，對薄膜的可見光穿透性以及對結構之影響。
依實驗結果顯示，隨著WO3含量的增加，晶格面變小，導致在可見光穿透率波長約(300~370nm)附近，會往短波長方向位移；在WO3的添加量由5％增加至20％時，可發現增加熱處理時的時間，將有助於整個結構轉變成In6WO12的晶體結構，造成可見光穿透率往紅光波長方向的位移，亦即往波長較長的方向偏移。
而在結構方面以XRD量測晶體結構，發現隨著WO3添加量的增加，隨著熱處理溫度的升高，WO3的相也有越明顯的趨勢，但是當添加量增加到25％，熱處理溫度為300℃時，此時的晶體結構卻轉變為非晶相，而當提高熱處理溫度至500℃時，這時的晶體結構由非晶相轉變為In6WO12的晶體結構。

This experiment utilizes traditional powder metallurgy way, mix ITO and WO3 material powder first, and then pressing to shaped, then sintering with the high temperature furnace, deposited different kinds of components on high purity quartz (GE-124AA) by E-gun sputtering finally. The films doped with 5 to 25% of tungsten trioxide to confer with the visible light transmittance and influence on the structure to the thin film.
Show in accordance with the experimental result, with the increase of WO3 content, the lattice will become to small, cause it in the visible transmittance of wavelength (300~700nm) shift to the short wavelength way. While increasing from 5% to 20% in adding amount of WO3, can find the time while increasing the heat treatment, will contribute to the whole structure to change into the crystal structure of In6WO12, brought about the wave shift to long wave side.
Observation the crystal structure with XRD measurement, when rising of WO3 content and anneal temperature the phase of WO3 has the more obvious tendency, but as the adding amount rises to 25%, when heat treatment temperature is 300℃, the crystal structure at this moment is changed into the amorphous, and when improving heat treatment temperature to 500℃, crystal structure at this moment from noncrystalline to change into the crystalline structure of In6WO12.

1. 李玉華， “透明導電膜及其應用”，科儀新知，第十二卷第一期，(1990)94。
2. K. L. Chopra,“ Growth of Thin Metal Films under Applied Electric Field ”, Appl. Phys. Lett., 7(5)(1965) p.140~142.
3. D. I. Kennedy, R. E. Hayes and R. W. Alsford,” The Influence of Charge Effects on the Growth and Electrical Resistivity of Thin Metal Films” , J. Appl. Phys., 38(1967) p.1986~1987.
4. 楊明輝，“透明導電膜材料與成膜技術的新發展”,材料與技術 (2002), P.167-174。
5. Yung-Jen Lin, Ching Jiunn Wu, “The Properties of Antimony-doped Tin Oxide Thin Films forms the Sol-Gel Process”, Surface and CoatingsTechnology 88 (1996) 239-247
6. Kwang Ho Kim and Soo Won Lee,” Effect of Addition on Electrical andOptical Properties of Tin Oxide Film”, J. Am.Ceram. Soc. 77[4]915-21(1994).
7. D.J.Goyal, Chitra Agashe, M.G. Takwale and V.G. Bhide, ”X-ray Diffraction Studies of Spraed SnO2: Sb Films”, Journal of Crystal Growth 130 (1993) 567-570.
8. N. Miyata and H. Kitahata, “Preparation and Properties of Antimony-doped Tin Oxide Films Deposited Sputtering”, Thin Solid films, 125 (1985)33-38.
9. C. Goebbert, R. Nonninger, M.A. Aegerter, H. Schmidt, ”Wet Chemical Deposition of ATO and ITO Coatings Using Crystalline Nanoparyicles Redispersable in Solutions”, Thin Solid Films 351(1997)79-84.
10. F. Zhu, C. H. A. Huan, K. Zhang and A. T. S. Wee, “Investigation of Annealing Effects on Indium Tin Oxide Thin Films by Electron Energy Loss Spectroscopy”, Thin Solid Films, 359(2000) 244.
11. T. Ishida, H. Kobayashi and Y. Nakato, “Structures and Properties of Electron-beam-evaporated Indium Tin Oxide Films as Studied by X-ray Photoelectron Spectroscopy and Work-function Measurements”, J.Appl.Phys.,73(1993) 4344.
12. Je-Hsiun Lan and Kanicki jerzy, “ITO Surface Ball Formation Induced by Atomic Hydrogen in PECVD and HW-CVD Tools”, Thin Solid Films, 304(1997) 123.
13. Watkins-Johnsons Co, “Highly Conductive and Transparent Films of Tin and Fluorine Doped Indium Oxide Produced by APCVD”, Thin Solid Films, 221(1992) 166.
14. R. B. H. Tahar, T. Ban, Y. Ohya and Y. Takahashi, “Electronic Ttransport in Tin-doped Indium Oxide Thin Films Prepared by Sol-gel Technique”, J. Appl. Phys. 83 (1998) 2139.
15. J. L. Vossen, ”Transparent Conducting Films”, Physics of Thin Film,9(1997) ,1-64.
16. 陳林祈， ”電致色變技術與應用研發”，台大校友雙月刊，研究發展三，第48期，(2006).
17. J. Venables, “Nucleation and Growth of Thin films” , Rep. Prog. Phys., 47 (1984) 399.
18. L. Eckertova and T. Ruizicka, “Diagnostics and Applications of Thin Films”, Ch.1&2, Institute of Physics Publishing, 1993.
19. J. E. Byrne, “Recovery Recrystallization and Grain Growth”, Macmillan Publishing, 1965.
20. A. Mohammadi Gheidari, E. Asl Soleimani, M. Mansorhoseini, S. Mohajerzadeh, N. Madani, W. Shams-Kolahi, “Structural properties of indium tin oxide thin films prepared for application in solar cells,” Materials Research Bulletin ,Vol.40, pp. 1303–1307, (2005).
21. M. Quass, C. Eggsl, H. Wulff, “Structural studies of ITO thin films with the Rietveld method,” Thin Solid Films, Vol.332, pp.277-281, (1998).
22. M. Quaas, H. SteVen, R. Hippler, H. Wulv, “The growth process of plasma-deposited ITO films investigated by grazing incidence X-ray techniques”,Surface Science , Vol.454-456, pp.790-795, (2000).
23. W.S. Dabney, N.E. Antolino, B.S. Luisi, A.P. Richard, D.D. Edwards, “Sol-gel deposition ang characterization of In6WO12 thin film” Thin Solid Films 411 (2002) 192–197.
24. Annette P. Richard and Doreen D. Edwards, “Subsolidus phase relations and crystal structures of the mixed-oxide phases in the In2O3–WO3 system” Journal of Solid State Chemistry 177 (2004) 2740–2748.
25. D.C. Paine.T. Whitson, D. Janiac, R. Beresford, and Cleva Ow Yang , “A study of low temperature crystallization of amorphous thin film indium-tin-oxide”.J. Appl. Phys. 12,8445(1999).