具非晶質n-i-p-n層之氧化多孔矽發光二極體的光電特性

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研究生：	許立民 Li-Ming Hsu
論文名稱：	具非晶質n-i-p-n層之氧化多孔矽發光二極體的光電特性 Optoelectronic Characteristics of Oxidized Porous Silicon-LEDs with Amorphous n-i-p-n Layers
指導教授：	洪志旺 Jyh-Wong Hong
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系 Department of Electrical Engineering
畢業學年度：	88
語文別：	中文
論文頁數：	61
中文關鍵詞：	氧化多孔矽、發光二極體
外文關鍵詞：	oxidized porous silicon, PS-LED, dry etching
相關次數：	點閱：5 下載：0
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本論文的主要目的是探討以多孔矽（porous silicon）材料製作之發光二極體（light-emitting diode）的光電特性。在相同結構的氧化後多孔矽之上，分別沈積非晶矽氫（a-Si:H）及非晶碳化矽氫（a-SiC:H）n-i-p-n薄膜以改善元件特性。沈積非晶質膜時所用的電漿助長化學氣相沈積（PECVD）系統中附有一不銹鋼濾網。用以減少電漿直接撞擊薄膜所造成的傷害，同時亦可降低薄膜表面形成不必要聚合物的機會。再者，我們亦嘗試在沈積薄膜前，事先以乾蝕刻（dry etching）的方法將多孔矽上之氧化層去除，以降低元件的發光臨界電壓。
所研製的氧化多孔矽發光二極體都有不錯的整流特性，所採用的結構及製程均可有效提升元件的發光效率及降低元件的發光臨界電壓。

In this study, the conventional plasma-enhanced chemical vapor deposition (PECVD) system with an additional stainless steel (s.s.) mesh attached to cathode was used to deposit n-i-p-n a-Si:H layers onto oxidized porous silicon to form oxidized porous silicon light-emitting diode (PS-LED). The obtained PS-LED had a higher brightness (B) and a lower threshold voltage (Vth), as compared with the PS-LED fabricated with the same PECVD system without a s.s. mesh. The improvements of opto-electronic characteristics for the PS-LEDs would be mainly due to the used s.s. mesh, which would result in a deposited film with less plasma damages.
Also, n-i-p-n a-SiC:H layers were used to fabricate the PS-LED, to further improve device performances. The obtained PS-LED had the better optoelectronic characteristics, but its electroluminescence (EL) peak wavelength was red-shifted, probably due to, although the a-SiC:H layer had a higher optical band-gap but it also had a more random and hence more tail states, so the electron-hole pairs had more chance to be recombined through tail states.

ABSTRACT................................................................................................III
TABLE CAPTIONS...................................................................................IV
FIGURE CAPTIONS...................................................................................V
CHAPTER 1 INTRODUCTION...............................................1
CHAPTER 2 EXPERIMENTAL PROCEDURES..................3
2.1Preparation and Formation Mechanism of Porous Silicon.....3
2.1.1Anodization....................................................................3
2.1.2Formation Mechanism of Porous Silicon.......................4
2.1.3Oxidation and Dry Etching.............................................9
2.2Device Structures and Fabrications........................................9
2.3Measurement Techniques.....................................................20
2.3.1Photoluminescence (PL)...............................................20
2.3.2Electroluminescence (EL)............................................20
2.3.3Optical-Gap..................................................................23
CHAPTER 3 RESULTS AND DISCUSSION........................27
3.1Properties of Porous Silicon.................................................27
3.1.1Photoluminescence.......................................................27
3.1.2Microstructure of PS.....................................................30
3.1.3UV-IR absorption spectrum..........................................30
3.2Characteristics of p-n-i-p-n PS-LED....................................37
3.2.1Fundamental Consideration..........................................37
3.2.2 J-V and B (brightness)-V Characteristics.....................38
3.2.3 Ideality factor……………………………………........46
3.2.4 EL spectrum………………………………………......46
CHAPTER 4 CONCLUSIONS................................................56
REFERENCES.............................................................................58

                                

1. A. Uhlir, Bell System Tech. J. 35, p. 333, (1956).
2. D. R. Turner, J. Electrochem Soc. 105, p. 402, (1958).
3. R. L. Smith, S. F. Chung, and S. D. Collins, "A Theoretical Model of the Formation Morphologies of Porous Silicon", J. Electron. Mater., 17. P. 533 (1988).
4. Mano T, Bata T, Sawada H and Imai K., 1982 Digest of Papers, Symp VLSI Tech (Oiso, Japan:IEEE), p. 12.
5. Kauo Imai and Hidey Unno, "FIPOS (Full Isolation by Porous Oxidized Silicon) Technology and Its Application to LSIs", IEEE. Trans. Electron. Dev., ED-31, p. 297 (1984).
6. L. T. Canham, Appl. Phys. Lett. 57, p. 1046, (1990).
7. V. Lehmann and U. Gosele, "Porous Silicon Formation : A Quantum Wire Effect", Appl. Phys. Lett. 58, p. 856, (1991).
8. C. Tsai, K. H. Li, J. Sarathy, S. Shin, and J. C. Campbell, "Thermal Treatment Studies of the Photoluminescence Intensity of Porous Silicon", Appl. Phys. Lett. 59(22), p. 2814 (1991).
9. S. M. Proke, O.J. Glembocki et al., "An Alternate Mechanism for Porous Si Photoluminescence : Recombination in SiHx Complexes", Mater. Res. Soc. Proc 256, p. 107, (1992).
10. M. S. Brandt, H. D. Fuchs, J. Weber, and M. Cardona, "The Origin of Visible Luminescence from "Porous Silicon" : A New Interpretation", Solid State Comm. Vol 81 (4), p. 307, (1992).
11. Fereydoon Namavar, H. Paul Maruska, and Nader M. Kalkhoran, "Visible Electroluminescence from Porous Silicon np Heterjunction Diode", Appl. Phys. Lettg. 60(20), p. 2514, (1992).
12. Zhiliang Chen, Gijs Bosman, and Ochoa, "Visible Light Emission from Heavily Doped Porous Silicon Homojunction pn Diode", Appl. Phys. Lett. 62(7), p. 708, (1993).
13. J. P. Zheng, K. L. Jiao, W. P. Shen, W. A. Anderson, and H. S. Kowk, "Highly Sensitive Photodetector Using Porous Silicon", Appl. Phys. Lett. 61(4), p. 459, (1992).
13. J. P. Zheng, K. L. Jiao, W. P. Shen, W. A. Anderson, and H. S. Kowk, "Highly Sensitive Photodetector Using Porous Silicon", Appl. Phys. Lett. 61(4), p. 459, (1992).
15. Y. Kato, Jpn. J. Appl. Phys. 27, p. L1046, (1988).
16. Ulrich Gosele and Volker Lehmann, "Porous Silicon : A Sponge Structure.", International Conference on SSDM., Tsukuba, p. 469, (1992).
17. V. Lehmann, H. Cerva, and U. Gosele, "Pore Formation and Propagation Mechanism in Porous Silicon", Mat. Res. Soc. Symp. Proc. Vol. 256, p. 4, (1992).
17. V. Lehmann, H. Cerva, and U. Gosele, "Pore Formation and Propagation Mechanism in Porous Silicon", Mat. Res. Soc. Symp. Proc. Vol. 256, p. 4, (1992).
17. V. Lehmann, H. Cerva, and U. Gosele, "Pore Formation and Propagation Mechanism in Porous Silicon", Mat. Res. Soc. Symp. Proc. Vol. 256, p. 4, (1992).
17. V. Lehmann, H. Cerva, and U. Gosele, "Pore Formation and Propagation Mechanism in Porous Silicon", Mat. Res. Soc. Symp. Proc. Vol. 256, p. 4, (1992).
21. M. K. Lee and K. R. Peng "Blue Emission of Porous Silicon ", Appl. Phys. Lett. 62 (24) in june, p. 3159.
21. M. K. Lee and K. R. Peng "Blue Emission of Porous Silicon ", Appl. Phys. Lett. 62 (24) in june, p. 3159.
23. P. Steiner, F. Kozlowski, and W. Lang, "Blue and Green Electroluminescence from a Porous Silicon Device ", IEEE Electron Device Letters, Vol. 14, No. 7, July 1993.
23. P. Steiner, F. Kozlowski, and W. Lang, "Blue and Green Electroluminescence from a Porous Silicon Device ", IEEE Electron Device Letters, Vol. 14, No. 7, July 1993.
23. P. Steiner, F. Kozlowski, and W. Lang, "Blue and Green Electroluminescence from a Porous Silicon Device ", IEEE Electron Device Letters, Vol. 14, No. 7, July 1993.
26. M. S. Haque, H. A. Naseem, W. D. Brown, and S. S. Ang, "Hydrogenated Amorphous Silicon/Aluminum Interaction at Low Temperature", Mat. Res. Soc. Symp. Proc., Vol. 258, p. 1037, (1992).
27. Peter C. Sercel et al., "Visible Electroluminescence from Porous Silicon/ Hydrogenated Amorphous Silicon pn-Heterojunction Device", Appl. Phys. Lett. 68 (5), 29 Jan ., p. 684, (1996).
28. J. Tauc, Amorphous and Liquid Semiconductors, chap. 5, Plenum Press, p. 175, (1974).
30. Shoji Furukawa and Tatsuro Miyasato, "Quantum Size Effects on the Optical Band Gap of Microcrystalline Si:H", Phys. Rev. 38 (8), p. 5726, (1988).

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