本研究利用額外載子速率方程式(rate equation)與柏松方程式(Poisson’s equation)耦合，利用有限元素分析法得到額外載子於矽晶圓與太陽能電池之額外載子的空間分佈，從額外載子的空間分佈可以得到螢光與電場內部的分佈，再藉由著邊界條件的設定，控制太陽能電池電流的輸出以及整體額外載子生命期，可以得到電流與電壓曲線與額外載子生命期的關係，同時可藉由著額外載子生命期於空間上的分佈，模擬光致發光法缺陷對於螢光分佈影響，最後從模擬出來的缺陷影響螢光結果可推算缺陷影響螢光的點擴散方程，點擴散方程即可利用摺積的方式快速地得到缺陷對螢光的影響。

In this study, with the rate equation of excess carrier Poisson’s equation and finite element method, the distribution of excess carrier in wafers and solar cells can be obtained. By the obtained the distribution of excess carrier, the distribution of photoluminescence and electric field can be solved. With changing the boundary setting, the current output can be controlled and the J-V curve in different excess carrier lifetime can be obtained. Also, how a defect influence photoluminescence can be simulated by setting the distribution of excess carrier lifetime. The result of simulation can be written as point spread which can quickly obtain how a defect influences PL by convolution.

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