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研究生： 黃梓維
Tzu-Wei Huang
論文名稱： 用軸線法求三角形內部向量及二維元件模擬
Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation
指導教授： 蔡曜聰
口試委員:
學位類別： 碩士
Master
系所名稱： 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2018
畢業學年度： 106
語文別： 中文
論文頁數： 54
中文關鍵詞： 軸線法
相關次數： 點閱：7  下載：0 
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    • 在本篇論文中，我們開發全新的三角型網格模組，並對於半導體元件進行模擬，為了能夠更加提升模擬的精確性以及模擬時的任意適用性，我們開發出了二維的重心版模組，並且使用軸線法對其進行計算該三角形模組的電場、電子流密度與電洞流密度。這之中也利用了理論電阻值來驗證模擬電阻值還有模擬PN二極體之特性曲線與物理特性比較，來加以佐證我們所開發出的模組之精確性，在最後再探討本篇所開發之模組在未來的應用。

    In this thesis, we have successfully developed a new triangle mesh model by using the axis method for simulating semiconductor devices. To increase the accuracy and the flexibility for the simulation, we developed the 2D barycenter module to calculate the electric field, diffusion current and drift current. Furthermore, the simulated resistance are compared to the theoretical value for verification. The axis method is also applied to the PN diode I-V characteristics. Finally we investigate the future applications for the module.

    摘要 ………………………………………………………………………………………………………………………………….. i Abstract ……………………………………………………………………………………………………………………………… ii 致謝 ………………………………………………………………………………………………………………………………….. iii 目錄 ………………………………………………………………………………………………………………………………….. iv 圖目錄 ………………………………………………………………………………………………………………………………. v 表目錄 …………………………………………………………………………………………………………………………..... vii 簡介…………………………………………………………………………………………………………………..... 1 程式原理與架構介紹 ……………………………………………………………………………………..... 3 2.1 程式基本架構 …………………………………………………………………………………………......... 3 2.2 用邊線法求內部電場……………………………………………………………………………….......... 6 2.3 用軸線法求內部電場之模型開發 ……………………………………………………………..... 10 三角形網格於二維半導體之模擬與驗證 .…………………………………………………...... 19 3.1 內部電場驗證 …………………………………………………………………………………………....... 19 3.2 電子流與電洞流驗證 ..…………………………………………………………………………………. 21 3.3 簡單電阻模擬分析.………………………………………………………………………………………… 27 第四章 P-N二極體接面與 I-V 驗證…...…..…………………………………………………………….… 31 4.1 兩段式電壓掃描 …………………………………………………………………………………………… 32 4.2 IV結果驗證 ………………………………………………………………………………………….……… 34 4.3 BJT延伸討論 .……………………………………………………………………………………………… 36 第五章 結論 ……………….………………………………………………………………………………………………… 40 參考文獻 ……………………….………………………………………………………………………………………………… 41

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