摘要
本論文主要是研究磷化銦/砷化銦鎵雙異質接面雙載子電晶體之製作與分析。利用固態源分子束磊晶系統成長磷化銦/砷化銦鎵雙異質接面雙載子電晶體，改變磊晶部份，改變磷化銦間閣層之濃度與厚度，使得電晶體得以操作在120kA/cm2的電流密度下，達到fT=120GHz，fMAX=47GHz，BVCEO=4V。
利用複合集極結構，可以達成電流密度150kA/cm2，fT=130GHz，fMAX=66GHz，BVCEO > 9V。為了要更瞭解元件的特性，我們利用T-模型分析內部參數，得到電容電阻充放電時間及元件傳輸時間。分析充放電時間與元件傳輸時間可以提供給我們改善製程及磊晶結構的依據。
從萃取出來的結果得到想要提升高頻效應，電容電阻充放電時間與元件傳輸時間都需要改善，才可達到更佳的特性。在製程上，利用縮小線寬，縮小電容，在維持電阻一定的假設下，減少充放電時間。在結構上，利用縮短集極厚度，減少元件傳輸時間，另外提升抑制電流阻擋效應能力，可以減少充放電時間。

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