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研究生: 李心媛
Shin-Yuan Li
論文名稱: 四合一正三角形網格開發及在二維半導體元件模擬應用
Development of four-in-one regular triangle element and its applications to 2D semiconductor device simulation
指導教授: 蔡曜聰
Yao-Tsung Tsai
口試委員:
學位類別: 碩士
Master
系所名稱: 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
論文出版年: 2016
畢業學年度: 104
語文別: 中文
論文頁數: 56
中文關鍵詞: 模擬正三角形
外文關鍵詞: simulation, rectangle
相關次數: 點閱:5下載:0
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  • 在模擬元件結構時,若遇到特殊型元件,由於矩形網格較規則性,因此受限較大,使得在圓弧設計的元件以及較不規則性的元件模擬其易造成極大的誤差,因此在本論文中,我們開發正三角形網格,進而開發出四合一正三角形網格,我們運用網格來滿足任意形狀的二維半導體元件模擬。為了實現網格的準確性,我們以簡單電阻及特殊型電阻和PN二極體進行驗證,與理論值及估算理論值做比較, 驗證無誤後,最後再利用我們的網格探討PN二極體內的電流擁擠效應。


    The rectangle mesh is restricted for the simulation of 2D semiconductor device with special structure. Therefore, the rectangle mesh can introduce serious errors into the simulation in irregular region device and arc-shaped device. In this thesis, we develop regular triangle mesh and four-in-one regular triangle mesh. It can be applied to fit any shapes of semiconductor device in the 2D simulation. In order to verify the accuracy of this module, we simulate simple resistor and particular resistor for comparison to the theoretical value. Finally, we apply the four-in-one module to discuss current crowding of the PN diode.

    摘要..................................................iii 圖目錄.................................................vi 表目錄...............................................viii 第1章 簡介...............................................1 第2章 矩形網格與四合一正三角形網格建立及分析................3 2.1 二維等效電路矩形網格建立..............................3 2.2 二維正三角形網格開發.................................6 2.3 四合一正三角網格與矩形網格之間的分析.................12 第3章 矩形網格與四合一正三角形網格應用探討與驗證..........16 3.1 四合一網格在均勻電阻的應用..........................16 3.2 四合一網格在菱形區域Oxide電阻的應用.................18 3.2.1 四合一正三角形在菱形Oxide區塊應用.................18 3.2.2 探討菱形區域Oxide內部電阻值.......................20 3.2.3 矩形在菱形Oxide區塊應用的缺失.....................26 3.3 基本PN二極體與圓弧接面之二極體驗證...................28 3.3.1 基本PN二極體應用驗證..............................28 3.3.2 應用於圓弧形PN二極體接面的驗證.....................31 第4章 四合一網格與元件模擬之應用.........................34 4.1 網格應用於PN二極體特性..............................34 4.2 網格模擬探討內部電場及電流密度.......................36 4.3 驗證內部電場及電流密度..............................39 第5章 結論.............................................43 參考文獻.............................................. 44

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