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研究生： 楊柏宣
Bo-Xuan Yang
論文名稱： 高介電常數TiOX/SiOX介電層製備低電壓場效應 電晶體元件
Low Voltage Field Effect Transistor Based on High Dielectric Constant Titanium Oxide/ Silicon Oxide Dielectric
指導教授： 劉振良
Cheng-Liang Liu
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程與材料工程學系
Department of Chemical & Materials Engineering
論文出版年： 2015
畢業學年度： 103
語文別： 中文
論文頁數： 104
中文關鍵詞： 高介電常數材料 、有機場效應電晶體 、溶液凝膠法
外文關鍵詞： High-K material, OFET, Sol-gel
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    • 在本實驗中，十八烷基磷酸(octadecylphosphonic acid; ODPA)覆蓋高介電常數TiOX/SiOX和有機混成(hTSO)之介電層製備有機pentacene場效應電晶體。沉積自組裝單分子層後，厚度約為120 nm的hTSO介電層，並擁有145 nF cm-2的電容值、高介電常數(~20)及低漏電流(10-7 A cm-2)。本實驗將hTSO/ODPA混成介電層沉積pentacene製備有機場效應電晶體，其操作電壓低於-3.0 V，電流開關比超過104，閥值電壓小於-0.54 V，亞閥值斜率小於300 mv dec-1，遷移率達0.2 cm2 V-1 s-1。而在最後對其進行穩定性測試，hTSO介電層經過ODPA沉積後的電晶體具有良好的穩定性。
    在本實驗中，以全溶液製程製備全透明之低電壓氧化鋅(ZnO)場效應電晶體。控制錫的摻雜濃度及退火溫度製備高導電度透明ITO並作為閘極。為了製備低成本之電子元件，溶液製程之ZnO薄膜被用來當作場效應電晶體之主動層。新退火溫度條件400 oC之hTSO 介電常數高達34。製備出以旋轉塗佈ITO閘極及具有高電容值旋轉塗佈hTSO介電層，並最後以噴塗法製備PEDOT:PSS作為源極及汲極製備全溶液製程且透明之ZnO場效應電晶體。結果顯示出有潛力作為高性能之全溶液製程且透明之ZnO場效應電晶體。

    We reported on the fabrication of low-voltage operating pentacene-based organic thin film transistors (OTFTs), composted of a high k gate dielectric made from titanium-silicon oxide/organic hybrid materials(hTSO) covered with a long alkyl chain octadecylphosphonic acid(ODPA). 120 nm-thick hTSO hybrid dielectric provides high capacitance (145 nF cm-2), high k value (~20) and low leakage current density (10-7 A cm-2). Employing the appropriate hTSO/ODPA hybrid dielectric, pentacene based OTFTs operate under -3.0 V, on/off ratio above 104, threshold voltage below -0.54 V, subthreshold slopes as low as 300 mv dec-1, and mobilities as 0.2 cm2 V-1 s-1.
    We reported low-voltage all solution-processable transparent ZnO-FETs. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent gate electrodes. Solution-processed ZnO thin films are attractive as active materials in field effect transistors (FETs) for low-cost electronic device applications. The electrical characteristics of 400 oC hTSO show a high dielectric constant of nearly 34. For the first time, all solution-processed fully transparent ZnO-FETs based on spin-coated ITO gate electrodes, hTSO gate dielectric layers with high capacitance and spray-coating PEDOT:PSS pattern electrodes were demonstrated. Our results suggest that solution-processable fully transparent oxide FETs have the potential for low-temperature and high-performance application in transparent.

    摘要 i Abstract ii 誌謝 iv 目錄 v 圖目錄 xi 表目錄 xvi 第一章 緒論 1 1-1 前言 1 1-2 場效應電晶體 2 1-2-1 簡介 2 1-2-2 場效應電晶體原理及工作模式 2 1-2-3 電晶體元件結構 5 1-2-4 重要參數 7 1-2-4-1 載子遷移率(Mobility;" μ" )及閥值電壓(Threshold Voltage; Vth) 7 1-2-4-2 電流開關比(On/off ratio; Ion/Ioff) 8 1-2-4-3 亞閥值斜率(subthreshold Swing; S.S.) 8 1-2-4-4 電荷陷阱密度(Trap Density; Ntrap) 9 1-3 介電層材料及特性 9 1-3-1 介電常數(Dielectric Constant; k) 9 1-3-2 常用介電層介紹 10 1-3-3 漏電流(Leakage Current; J) 11 1-3-4 粗糙度(Roughness) 14 1-3-5 無機高介電常數介電層 15 1-3-6 有機介電層 16 1-3-7 介電層製備方法 18 1-3-7-1 原子層沉積法 18 1-3-7-2 濺鍍法 19 1-3-7-3 電漿氧化反應 20 1-3-7-4 陽極氧化法 21 1-3-7-5 溶液-凝膠法 22 1-3-7-6 有機介電層製備方式 26 1-3-8 自組裝單分子層與多層介電層 27 1-3-8-1 自組裝單分子層 27 1-3-8-2 多層介電層 30 1-4 Pentacene性質 31 1-5 噴塗法製備ZnO及其特性 32 1-6 研究動機 33 第二章 實驗 35 2-1 實驗材料及藥品 35 2-2 實驗儀器 36 2-2-1 製程儀器 36 2-2-2 分析儀器 36 2-3 介電層薄膜及半導體層物性分析 37 2-3-1 鍵結及元素分析 37 2-3-2 熱性質分析 38 2-3-3 接觸角及表面形態分析 38 2-3-4 電性分析及穩定性測試 39 2-4 實驗步驟 39 2-4-1 溶液-凝膠法合成TiOX/SiOX混成薄膜前驅物 39 2-4-2 反應機制 41 2-4-3 TiOX/SiOX混成薄膜製備pentacene薄膜電晶體 42 2-4-3-1 介電層薄膜製備 42 2-4-3-2 自組裝單分子層製備 42 2-4-3-3 元件製備 43 2-4-3-4 實驗流程 44 2-4-4 TiOX/SiOX混成薄膜製備透明ZnO薄膜電晶體 45 2-4-4-1 氧化銦錫(ITO)製備 45 2-4-4-2 介電層薄膜製備 45 2-4-4-3 ITO及ZnO反應機制 45 2-4-4-4 元件製備 46 2-4-4-5 實驗流程 48 第三章 TiOX/SiOX混成薄膜製備pentacene薄膜電晶體實驗結果與討論 49 3-1 熱重分析 49 3-2 傅立葉轉換紅外線光譜分析 50 3-3 X射線光電子能譜分析 51 3-4 接觸角分析 53 3-5 原子力顯微鏡分析 54 3-5-1 介電層表面形態 54 3-5-2 半導體層表面形態 55 3-6 漏電流及電容分析 55 3-6-1 漏電流分析 55 3-6-2 電容分析 56 3-7 電晶體電性分析 58 3-7-1 轉移特性曲線圖 58 3-7-2 輸出特性曲線圖 60 3-8 穩定性測試 61 第四章 TiOX/SiOX混成薄膜製備透明ZnO薄膜電晶體實驗結果與討論 63 4-1 熱重分析 63 4-2 傅立葉轉換紅外線光譜分析 64 4-3 X射線光電子能譜分析 66 4-4 氧化銦錫導電度量測 69 4-5 電容分析 69 4-6 電性量測 70 4-6-1 轉移特性曲線圖 70 4-6-2 輸出特性曲線圖 74 第五章 結論與未來展望 75 第六章 參考文獻 76

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