簡易檢索 / 詳目顯示
| 研究生： |
周本哿 Pen-ko Chou |
|---|---|
| 論文名稱： |
電流分布對GaN-LED內部量子效率影響之研究 Influence of Current Spreading on Internal Quantum Efficiency in GaN-LED |
| 指導教授： |
劉正毓
Cheng-yi Liu |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
工學院 - 化學工程與材料工程學系 Department of Chemical & Materials Engineering |
| 畢業學年度： | 96 |
| 語文別： | 中文 |
| 論文頁數： | 49 |
| 中文關鍵詞： | 電流密度 、電流分布長度 、內部量子效率 、氮化鎵 、發光二極體 |
| 外文關鍵詞： | GaN, IQE, LED, internal quantum efficiency, current spreading length, current density |
| 相關次數： | 點閱：8 下載：0 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
Thin-GaN LED 為一種具前瞻性的結構，其製程需經過雷射剝離 ( laser lift-off ) 以及晶圓鍵合 ( wafer bonding ) 的步驟。相較於傳統式LED，擁有較佳的電流分布以及散熱能力，使 thin-GaN LED 結構成為高功率 LED 應用在生活照明設備的關鍵。在高電流注入之下，電流密度在 thin-GaN LED 內的分布將成為影響發光效率 ( 內部量子效率 ) 的重要因素。
傳統式 LED 的電流分布特性已經在許多文獻中被探討，電流密度隨著距離從電流注入點的增加呈現指數遞減。Thin-GaN LED 的電流分布特性至今仍未深入探討。在此研究中將會由 thin-GaN LED 電流分布特性的討論，得到電流分布長度，並利用電流分布長度計算出內部量子效率。
A promising thin-GaN light emitting diodes (LEDs) structure, different from conventional GaN-based LED, have been developed by laser lift-off (LLO) and wafer bonding processes, also have better current spreading and thermal dispersion abilities. The key application of thin-GaN LED structure is used for high-power general lighting. Under high current in-put, the current density distribution will become a significant factor to affect lighting performance (internal quantum efficiency) of thin-GaN LED chip.
The characteristics of the current spreading in the conventional wire bonded LED structure have been well studied. An exponential decrease in the current density with increasing distance away from the mesa edge was observed. Yet, for thin-GaN LED, the current spreading characteristics have not been addressed properly. In this study, we will present the current spreading characteristics of thin-GaN LED, and calculate the internal quantum efficiency (IQE) by using current spreading length.
[ 1 ] Y.-L. Li, Y.-R. Huang and Y.-H. Lai, Appl. Phys.Lett., 91, 181113 (2007)
[ 2 ] Satoshi Watanabea, Norihide Yamada, Masakazu Nagashima, Yusuke Ueki, Chiharu Sasaki, Yoichi Yamada, Tsunemasa Taguchi, Kazuyuki Tadatomo, Hiroaki Okagawa and Hiromitsu Kudo, Appl. Phys. Lett.,4906, Vol. 83, No. 24 (2003)
[ 3 ] X. A. Cao, S. F. LeBoeuf, M. P. D’Evelyn, S. D.Arthur, J. Kretchmer, C. H. Yan and Z. H. Yang, Appl. Phys. Lett., 4313, Vol. 84, No. 21 (2004)
[ 4 ] Tsung-Xian Lee, Chao-Ying Lin, Shih-Hsin Ma and Ching-Cherng Sun, OPTICS EXPRESS, 4176, Vol. 13, No. 11, (2005)
[ 5 ] Tung-Xian Lee, Kuo-Fong Go, Te-Yuan Chung and Ching-Cherng Sun, Proc. of SPIE Vol. 6473, 64731P, (2007)
[ 6 ] Hyunsoo Kim, Jaehee Cho, Jeong Wook Lee, Sukho Yoon, Hyungkun Kim, Cheolsoo Sone, and Yongjo Park, Appl. Phys. Lett., 90, 063510 (2007)
[ 7 ] D. W. Kim, H. Y. Lee, M. C. Yoo, and G. Y. Yeom, Appl. Phys. Lett., 86, 052108 (2005)
[ 8 ] X. Guo, Y.-L. Li, and E. F. Schubert, Appl. Phys. Lett., 1936, Vol. 79, No. 13 (2001)
[ 9 ] Hyunsoo Kim, Seong-Ju Park Hyunsang Hwang and Nae-Man Park, Appl. Phys. Lett., Vol. 81, No. 7, 12 (2002)
[ 10 ] Jung-Tang Chu, Chih-Chiang Kao, Hung-Wen Huang, Wen-Deng Liang, Chen-Fu Chu, Tien-Chang Lu, Hao-Chung Kuo and Shing-Chung Wang, Jpn. J. Appl. Phys., Vol. 44, No. 11 (2005)
[ 11 ] 林志雄，「大面積陣列式氮化鎵發光二極體之研製與分析」，國立中央大學，碩士論文，民國95年。
[ 12 ] W. P. Dumke, Solid-state Electronics, 1279, 16 (1973)
[ 13 ] G. H. B. Thompson, Physics of Semiconductor Laser Devices ( Wiley, New York, 1980 ), p. 307.
[ 14 ] Hyunsoo Kim, Kyoung-Kook Kim, Kwang-Ki Choi, Hyungkun Kim, June-O Song, Jaehee Cho, Kwang Hyeon Baik, Cheolsoo Sone, Yongjo Park and Tae-Yeon Seong, Appl. Phys. Lett., 91, 023510 (2007)
[ 15 ] J.-Q. Xi, Hong Luo, Alyssa J. Pasquale, Jong Kyu Kim and E. Fred Schubert, IEEE Photonics Technol. Lett., 2347, Vol. 18, No. 22 (2006)
