隨著積體電路產業矽晶圓尺寸的加大，製程線寬變窄的趨勢，清洗、蝕刻製程的發展，影響半導體產業的進步，製程潔淨程度直接影響元件的良率。因此，必須使用超高潔淨度化學品，以避免化學品中所含不純物污染到矽晶圓表面。而如何準確的分析、管制化學品中不純物的含量，成為維持高製程產率的關鍵因素。然而，複雜的樣品基質，將使低濃度金屬不純物的分析發生困難。為滿足製程需求，使用濃縮前處理技術，將樣品基質揮發去除，有效提高樣品中微量待測成份相對於基質成份之分析訊號的比值，將樣品中待測的微量元素濃縮至儀器穩定可偵測的濃度範圍，增加分析結果可靠性。
本研究選擇以揮發法(Volatilization)，將雙氧水樣品基質蒸發後，再以ICP-MS定量分析待測樣品中所含的微量金屬不純物。結果顯示，定量分析5 ppt標準樣品的添加樣品回收率為80~113%，可符合目前與未來國際半導體設備暨材料協會(Semiconductor Equipment and Materials International, SEMI ) 標準化學品的分析能力需求。

The metallic impurity level of process chemical for integrated circuits industry is getting lower, particularly as the industry moves to larger wafer size and smaller line-widths. To avoid contamination of the wafer surface by the cleaning solution itself, the purity of the reagents must be extremely high. The accurate determination and control of metallic impurities is key to maintaining high production yield. Traditionally, inductively coupled plasma mass spectrometry (ICP-MS) has been the technique of choice for ultra-trace element determinations in high-purity chemicals. However, direct determination by ICP-MS is unsatisfactory owing to insufficient detection power and interference from matrix of the chemicals.
In order to achieve the high sensitive ICP-MS determination, impurity were concentrated by a stabilization evaporator and measured under normal and cool plasma conditions. This study describes the determination of metallic impurities in hydrogen peroxide by ICP-MS after volatilization pretreatment. The result of quantitative spike recoveries at 5 ppt level are 80~113%, indicated excellent measurement accuracy, attain SEMI Grade 5 purity levels.

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