摘要
本論文係利用有機金屬氣相沉積技術分別成長氮化鋁鎵/氮化鎵
異質接面蕭特基二極體結構試片和金屬－半導體－金屬光偵測器結
構試片，對試片製作蕭特基二極體，量測金屬與試片接觸的蕭特基位
障及理想因子，最後將蕭特基二極體的研究結果應用於金屬-半導體-
金屬光偵測器之製作，並量測元件暗電流及光頻譜響應度等特性。
論文中，在氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光偵測
器的光頻譜響應度中看出異質接面有抑制光電子－電洞被電極吸收
的情形，為確定原因，試著將試片中的氮化鋁鎵披覆層利用光電化學
氧化方法去除，再製作成金屬-半導體-金屬光偵測器，分析具有披覆
層及無披覆層光偵測器特性之差異。
最後藉由量測於不同偏壓下之光頻譜響應度與霍爾量測結果，確
定在光響應度抑制及連續暗電流中的峰值為氮化鋁鎵/氮化鎵異質接
面能帶不連續，在氮化鎵側產生一位阱，並有一很高濃度的電子侷限
在小範圍的位阱內，稱為二維電子氣，所造成的結果。

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