兆赫波輻射用-高速高功率分離式傳輸復合行波式光二極體

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研究生：	許弘錢 Hung-Chien Hsu
論文名稱：	兆赫波輻射用-高速高功率分離式傳輸復合行波式光二極體 High Speed and High Power Separated-Transport-Recombaination Traveling-Wave Photodiode for the Application of THz Transmitter
指導教授：	許晉瑋 Jin-Wei Shi
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系 Department of Electrical Engineering
畢業學年度：	93
語文別：	中文
論文頁數：	60
中文關鍵詞：	行波式光二極體、高速/高功率光二極體、兆赫波發射器
外文關鍵詞：	Traveling-wave photodiode, THz transmitter, High speed / power photodiode
相關次數：	點閱：7 下載：0
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在此論文中，我們提出了一新穎的分離式傳輸復合行波式光二極體，此光二極體不但可提升光二極體的輸出功率-頻寬雙重表現，更可解決傳統光二極體在設計上載子傳輸時間、本質電容以及飽和電流三者的抵觸關係。
在一般高速光二極體的表現上，通常的指標是追求頻寬與飽和電流的表現。但傳統的光二極體在高功率操作下，通常會因載子漂移累積等問題，產生一嚴重的空間電荷遮蔽效應，造成嚴重的頻寬限制與輸出功率衰退的缺點。
所以我們針對傳統光二極體所遭遇到的問題，提出了我們新穎的磊晶結構加以克服。在傳統光二極體的吸光層中，加入一部分的復合中心(低溫成長砷化鎵)與傳輸層(砷化鎵)做組合。如此一來和傳統光二極體相比，除了將可大大提高速度與輸出功率表現外，更也解決了傳統光二極體在設計上的抵觸問題。
此元件的成功，不僅可解決數位和類比光通訊領域中的光偵測器瓶頸與問題，更大大的可應用在一兆赫（毫米）波源發射器上的光電導元件，以提供作為一穩定的兆赫波源發射器。

We demonstrate a novel structure of p-i-n photodiode: Separated-Transport-Recombination photodiode, which can greatly release the trades-off between RC bandwidth limitation, responsivity, and output saturation power performance. By incorporating an epitaxial layer, which has short carrier lifetime (less than 1ps) to serve as the recombination center, with the intrinsic photo-absorption layers, this device exhibits superior speed and power performance to the control photodiode with pure intrinsic photo-absorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photo-absorption layer is fully composed of materials with short lifetime (~1ps), under high dc bias voltages.

目錄
目錄                                                       Ⅰ
圖目錄                                                     Ⅳ
表目錄                                                     Ⅶ
第一章、簡介
?	1-1背景                                              1
?	1-2兆赫波簡介與其應用                                3
?	1-3論文組織與架構                                    6
第二章、光檢測器原理
?	2-1光二極體介紹                                      8
?	2-2行波式光二極體原理與頻率限制                     10
?	2-2-1行波式光二極體等效電路                      10
?	2-2-2行波式光二極體頻寬限制                      12
?	2-3傳統光二極體的磊晶結構原理與問題                 15
?	2-3-1傳統PIN砷化鎵光二極體                      15
?	2-3-2傳統PIN低溫砷化鎵光二極體                  16
?	2-4分離式傳輸復合行波光二極體                       18
?	2-4-1分離式傳輸復合行波光二極體原理              19
?	2-4-2分離式傳輸復合光二極體的磊晶材料頻寬限制    21
第三章、光檢測器設計與製作
?	3-1 設計模擬                                        22
?	3-2 磊晶設計                                        27
?	3-3 製作流程                                        28
?	3-3-1曝光顯影製程簡介                            28
?	3-3-2 N contact金屬化製程                         29
?	3-3-2主動區蝕刻                                  30
?	3-3-3 P contact金屬化製程                         31
?	3-3-4快速熱回火                                  32
?	3-3-5元件區蝕刻                                  32
?	3-3-6平坦化與絕緣                                33
?	3-3-7金屬導線連接線                              34
?	3-3-8元件研磨與切割                              35
第四章、量測討論
?	4-1 TLM量測                                         41
?	4-2 DC量測                                          43
?	4-3 Electrical-Sampling高速量測                     43
?	4-3-1量測設備                                    45
?	4-3-2量測結果與討論                              45
第五章、結論
?	5-1總結                                             51
?	5-2未來方向                                         51
?	5-2-1元件效能改良                                51
?	5-2-2兆赫波輻射器模型應用                        52
參考文獻                                                   53
著作列表                                                   59
圖目錄
圖1-1(a)高速高效率光二極體(b)高速高功率光二極體               2
圖1-2電磁波頻譜示意圖                                       4
圖1-3兆赫波收發器無線系統                                   5
圖2-1(a)垂直入射型光二極體(b)邊緣入射型光二極體               9
圖2-2行波式光二極體示意圖                                  11
圖2-3元件內部等效圖                                        11
圖2-4(a)光二極體等效電路(b)光二極體簡化等效電路              12
圖2-5入射光脈衝激發電脈衝後電流表示                        13
圖2-6元件特性阻抗模擬與外部電路結合示意圖                  14
圖2-7高功率注入下，傳統砷化鎵光二極體能帶與電場分佈示意圖  15
圖2-8傳統低溫砷化鎵光二極體能帶與電場分佈示意圖            17
圖2-9陷阱能位障變化示意圖                                  18
圖2-10分離式傳輸復合行波式光二極體能帶與電場分佈示意圖     19
圖2-11分離式傳輸復合行波式光二極體在加大電場操作下能帶與電場分佈改變示意圖                                        20
圖3-1以Matlab模擬分離式傳輸復合光二極體之頻寬對吸光厚度關係圖
24
圖3-2以Matlab模擬傳統砷化鎵光二極體之頻寬對吸光層厚度關係 25
圖3-3漸變式匹配共平面電極設計                              26
圖3-4磊晶層結構示意圖                                      27
圖3-5曝光顯影製程示意圖                                    29
圖3-6  N型金屬化製程剖面圖                                 30
圖3-7主動區蝕刻製程剖面圖與OM上視圖                      31
圖3-8  P型金屬化製成剖面圖與OM上視圖                     32
圖3-9元件區蝕刻製程剖面圖與OM上視圖                      33
圖3-10 BCB塗佈與BCB蝕刻製程剖面圖                        34
圖3-11連接線金屬化製成剖面圖與OM上視圖                   35
圖3-12試片經製程步驟完成OM上視圖                         35
圖3-13單一元件經切割分離後示意圖                           36
圖3-14  (A)~(H)整體製程流程側剖面圖                         37
圖4-1 TLM測試試片                                         41
圖4-2 TLM測試結果                                         41
圖4-3元件A&B的直流量測結果                               43
圖4-4量測設備架構圖                                        44
圖4-5元件A&B的高速量測-響應度的表現                      45
圖4-6元件A&B的高速量測-速度的表現                        47
圖4-7元件A&B的高速量測-脈衝響應波形圖                    48
圖4-8元件A與B分別在高功率與低功率下的操作比較            49
圖5-1沉積砷化鎵作為金半接面連接層                          51
圖5-2逐漸耦合式的邊緣入射二極體結構                        51
圖5-3兆赫波發射器示意圖                                    52
表目錄
表1 實驗組-分離式傳輸復合行波式光二極體磊晶表              38
表2 對照組-傳統砷化鎵光二極體磊晶表                        39
表3 實驗組A與對照組B磊晶結構                            40
表4  P型連接金屬阻值                                      42

                                

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