一維半導體元件頻域模擬之探討｜國立中央大學博碩士論文系統

簡易檢索 / 詳目顯示

回結果列表

研究生：	鍾哲仁 Zhe-Ren Zhong
論文名稱：	一維半導體元件頻域模擬之探討 1D Semiconductor Device Simulation in Frequency Domain
指導教授：	蔡曜聰 Yao-Tsung Tsai
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系 Department of Electrical Engineering
畢業學年度：	94
語文別：	中文
論文頁數：	41
中文關鍵詞：	AC元件模擬
外文關鍵詞：	AC device simulation
相關次數：	點閱：9 下載：0
分享至:	分享至facebook 分享至twitter

查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

中文摘要
本論文中我們發展了兩種一維AC模擬器，他們都可以從暫態的模擬器裡面開發出來，AC模擬器可以幫助我們獲得半導體元件在頻域之中的各種量測，我們開發出兩種模擬器一種稱為３N交流模擬器，另一種稱為4N交流模擬器，兩種方法都可以用來量測曲線圖，我們將會比較我們開發出來的兩種模擬器的差異，在最後我們會利用PN二極體以及金氧半電晶體來驗證我們的模擬器，利用這兩種元件去證明我們所開發出來的AC

ABSTRACT
In this thesis, we develop two methods for 1D AC device simulation. These methods can be developed by using the transient simulation. The methods for 1D AC device simulation can help user obtain the parameter measurement of the semiconductor device in frequency domain. We develop the 3N and 4N method for 1D AC device simulation. They can measure the curve of the semiconductor device. We will compare the 3N method with the 4N method for 1D AC device simulation. Finally, we apply the 3N method and the 4N method to simulate the PN diode and the MOS system.

Contents
Introduction......................................................1
Transient method for device C-V simulation in time domain.........3
1   1D Model review..............................................3
2   C-V simulation of a P-N diode................................8
3   C-V simulation of an MOS system.............................10
AC method for device C-V simulation in frequency domain..........14
1   Relation between phasor and transient simulation............14
2   AC model in 1D device simulation............................20
3   Verification by a simple 1D resistor........................26
Application of device AC simulation..............................29
1   C-V simulation of a P-N diode...............................29
2   C-V simulation of an MOS system.............................37
Conclusion.......................................................40
List of Reference...................................................41

                                

Reference
[1] C.-L. Teng, “An equivalent circuit approach to mixed-level device and circuit Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan,Republic of China, Jun, Chapter 2, pp.5-10, 1997.
[2] R. F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley, Chapter 7, pp.318-320, 1996.
[3] H. C. Casey, J.R, Devices for Integrated Circuit Silicon and III-V Compound Semiconductors, John Wiley & Sons, Inc, Chapter 7, pp.308-314, 1999.
[4] C. Durney, L. D. Harris, and C. L. Alley, Electric Circuits, Taipei Publications Trading Company, Chapter 2, pp.28-37, 1982.
[5] S. Franco, Electric Circuits Fundamentals, Saunders College Publishing,
Chapter 13, pp.576-584, 1994.
[6] B. G. Streetman, S. Banerjee, Solid State Electronic Devices, Englewood Cliffs, N, J Prentice-Hall, Chapter 6, pp.321-326,1990.
[7] C. F. Gerald, P. O. Wheatly, Applied Numerical Analysis, Addison Wesley, 2003.

簡易檢索 / 詳目顯示

相關論文