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研究生： 陳麒安
chi-an chen
論文名稱： 奈微米球粗化基板技術 暨提升OLED元件出光效率研究
指導教授： 詹佳樺
chia-hua chan
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 能源工程研究所
Graduate Institute of Energy Engineering
論文出版年： 2015
畢業學年度： 103
語文別： 中文
論文頁數： 83
中文關鍵詞： 奈米球 、粗化基板 、OLED 、ICP 、提升光取出效率
相關次數： 點閱：13  下載：0 
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    • 本研究以電感應耦合電漿蝕刻系統（Inductively coupled plasma ICP）搭配二氧化矽奈米球作為蝕刻阻擋層進行玻璃基板的粗化。並利用粗化基板對提升有機發光二極體（Organic light emitting diode OLED）元件的發光效率。
    在乾蝕刻製程中作為蝕刻遮罩的二氧化矽奈米球在整個製程中扮演了非常重要的角色。由於隨蝕刻製程進行奈米球會逐漸消失，在不同的蝕刻參數下奈米球會殘留不同的形態並對應不同的奈米結構，調整蝕刻的時間就可以得到不同的奈米結構。蝕刻完的基板皆以掃瞄式電子顯微鏡（Scanning electron microscope SEM）觀察其形態，可依照結果調整蝕刻參數製作有不同奈米結構的基板。
    研究並將該具有奈米結構的基板以熱蒸鍍機台製作成OLED元件並以輝度計進行光學量測比較不同結構的基板對OLED元件的發光效率的影響。本研究比較的三種奈米結構分別為大面積平台結構與小面積平台結構和尖刺結構，從量測結果可以看出尖刺結構的發光效率最好，在輝度1000nit的條件下比對照組提升了46%。且將輝度提升到3000nit時也比對照組提升了41%，研究結果顯示利用奈微米球所製造之具有奈米微結構的基板未來或可作為提升OLED元件發光效率之應用。

    The thesis of this research is operating inductively coupled plasma (ICP) system to etch single layer SiO2 spheres on the glass substrate to fabricate nanostructure substrates for further organic light emitted diode (OLED) device applications.
    The SiO2 sphere mask is very important in this etching process. Because the SiO2 sphere mask will extinct as etching recipe going gradually, it can cause different structures when etching time changed. After etching process, we also use scanning electron microscope (SEM) to observe the structure. We can use different recipe to fabricate different nanostructures on glass substrate, and find which nanostructure can let more light go through the patterned glass substrate than the reference substrate.
    After etching glass substrates, we use these substrates with nanostructure and reference substrate to development OLED devices, and also measure the external quantum efficiency (EQE) of all OLEDs. After measuring OLED devices, we find that the substrate which has spike structure（etching 800 second） enhances 46% at luminance 1000nits and enhances 41% at 3000nits. This research approves that these patterned substrates can be used in further OLED device applications in the future.

    目錄 摘要 …………………………………………………………………………………Ⅰ 英文摘要 ……………………………………………………………………………Ⅱ 致謝 …………………………………………………………………………………Ⅲ 目錄 …………………………………………………………………………………Ⅳ 圖目錄 ………………………………………………………………………………Ⅵ表目錄 ………………………………………………………………………………Ⅹ 第一章 序論 ……………………………………………………….………………1 1-1有機發光二極體體簡介…………………………………………………1 1-2 研究動機………………………………………………………………21 第二章 實驗 ………………………………………………………………………22 2-1 實驗藥品………………………………………………………………22 2-2 實驗儀器………………………………………………………………22 2-3 基板處理………………………………………………………………23 2-4 奈米結構基板的製備…………………………………………………24 2-5 有機發光二極體元件製程……………………………………………25 2-6 元件及材料的量測……………………………………………………25 第三章 結果與討論 ……………………………………………………………….26 3-1小球鋪排基板的製造…………………………………………………26 3-2氣體流量對小球粗化基板的影響……………………………………28 3-3下電極功率對小球粗化基板的影響…………………………………37 3-4蝕刻時間對小球粗化機版的影響……………………………………40 3-5奈米求尺寸對小球粗化機版的影響…………………………………45 3-6具奈微米粗化基板之有機發光二極體元件製作……………………47 第四章 結論……………………………………………………….………………64 參考文獻…………………………………………………………………….………66 圖目錄 圖1：在玻璃基板上鍍膜並鋪一層PS奈米球再進行蝕刻的流程圖及量測結果。5 圖2：在基板上鋪一層silica particles 進行蝕刻的流程圖及量測結果。…………5 圖3：在玻璃基板上鍍上一層SU-8再進行粗化基板的流程圖。…………………7 圖4 : 圖3的量測結果。……………………………………………………….……7 圖5：在基板上作出buckle結構層示意圖及量測結果。…………………………9 圖6 : 微透鏡陣列的正面OM圖及側面SEM圖和示意圖。………………………9 圖7 : 隨機散射層結構的SEM觀測圖。……………………………………………11 圖8 : 製作隨機散射層結構的流程圖。……………………………………………11 圖9：ITO-Metal-ITO元件的結構示意圖。…………………………………………13 圖10 : 製作PDMS薄膜的流程圖。………………………………………………13 圖11 : 以SiO2和PS奈米球制作透鏡薄膜的SEM圖。……………………………15 圖12： 制作相反孔洞結構薄膜的流程圖。………………………………………15 圖13：相反金字塔結構的薄膜的製程。……………………………………………17 圖14：使用PEDOT-PSS的PLED元件的結構圖。………………………………17 圖15 : 以奈米球製作相反結構薄膜的流程圖。 …………………………………19 圖16：圖15結構的SEM圖。………………………………………………………20 圖17 : 玻璃基板表面結構的光路徑示意圖。 ……………………………………20 圖18：基板的清洗流程。……………………………………………………………23 圖19：奈米結構基板的製備流程……………………………………………………24 圖20：鋪排於ITO玻璃基板的二氧化矽奈米球（1000nm）的SEM圖。………27 圖21：為直徑300nm奈米球的鋪排狀況的ＳＥＭ圖。……………………………27 圖22：降低氣體流量並只用氯和氬進行蝕刻的結果。……………………………32 圖23：只用三氯化硼和氬進行蝕刻的基板的SEM圖。…………………………32 圖24：提高氯氣比例蝕刻的基板的SEM圖。……………………………………34 圖25：為以提高三氯化硼比例的參數進行蝕刻的基板的SEM圖。……………34 圖26：以500nm SiO2小球蝕刻sapphire之SEM觀測圖。………………………36 圖 27：腔體清潔後以1000nm SiO2小球作為擋層進行表2D組的SEM觀測。……36 圖28：粗糙的蝕刻結果的SEM圖。………………………………………………38 圖29：下電極功率160w蝕刻375秒的基板的SEM圖。…………………………39 圖30：下電極功率200w蝕刻300秒的SEM圖。…………………………………39 圖31：蝕刻300秒的SEM圖。……………………………………………………41 圖32：蝕刻400秒的SEM圖。……………………………………………………42 圖33：蝕刻500秒的SEM圖。……………………………………………………42 圖34 : 蝕刻700秒的SEM圖。……………………………………………………42 圖35：蝕刻800秒的SEM圖。……………………………………………………42 圖36：尖刺狀結構的SEM圖尖刺結構的蝕刻時間為1700秒。…………………44 圖37：直徑300nm的奈米球蝕刻100秒和130秒和150秒的SEM圖。………………46 圖38：再基板鋪排奈米球以及粗化過的基板（蝕刻800秒）的外觀。…………48 圖39 : 最後做成元件的蝕刻300秒的基板的SEM圖。…………………………48 圖40:最後做成元件的蝕刻500秒的基板的SEM圖。……………………………49 圖41 : 最後做成元件的蝕刻800秒的基板的SEM圖。…………………………49 圖42 : 有機發光二極體元件的結構圖。………………………………….………51 圖43 : 對照組元件和蝕刻800秒的元件。…………………………………………51 圖44：蝕刻800秒的基板作出的元件通低電流（2.5mA）的照片。……………52 圖45：各組OLED元件在1000nit的輝度下的光譜圖。…………………………53 圖46：蝕刻800秒的基板製作的元件在輝度3000nit下的光譜圖。……………54 圖47：OLED元件電流和輝度（luminance）的關係圖。…………………………58 圖48 : OLED元件電流和對應的光電轉換效率的關係圖。………………………58 圖49 : 光線在OLED元件內的路徑圖。……………………………………………60 圖50：各元件內部的光線通過表面的結構的路徑圖。……………………………62 圖51：不同狀況下OLED元件的發光層的光路徑圖。……………………………63 表目錄 表1: 不同的PEDOT-PSS的功函數及電阻的比較。 ……………………………17 表2:利用1000nm SiO2 小球作為蝕刻阻擋層，改變氣體流量參數表。…………29 表3: 為探討下電極功率影響的參數。 ……………………………………………38 表4:利用1000nm SiO2 小球作為蝕刻阻擋層，改變製程時間參數表。…………41 表5:不同材質的蝕刻速率比較圖。…………………………………………………45 表6: 1000nits時OLED元件光電量測結果整理表。………………………………56 表7: 3000nits 時OLED元件光電量測結果整理表。………………………………56

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