在本論文中，針對InGaP/GaAs 集極在上異質接面雙極性電晶體(collector-up HBT)的製程與特性作詳細的討論。為了在集極在上異質接面雙極性電晶體得到較佳的元件特性，適當的基射介面(base-emitter junction)處理是必要的，原因是集極在上結構之基射介面面積(ABE)通常遠大於基集介面面積(ABC)，此論文採用離子佈植方法來有效減少基射介面面積(ABE)；所以在小元件的光罩方面設計了定義四種不同離子佈植區域的光罩(EMII)，而此光罩區域邊緣與集極(collector)之間的間距稱之為DEB；在實驗中我們發現了DEB越小，元件的電流增益會增加，並且高頻表現也會變的更好，主要原因乃是基射面積(ABE)變小造成基極電流變小而使電流增益增加。另外從實驗中也得知隨著離子佈植量(ion implantation dose)的提高，元件的電流增益也會提高。最後從光罩的設計上與利用小訊號T-模型中，萃取出基極電阻(RB)、基集極電容(CBC)、與基射極電容(CBE)來探討了隨著DEB大小的不同及離子佈植面密度(ion implantation dose)的元件的高頻特性變化。所製作的集極在上異質接面雙極性電晶體(ABC = 2 ´ 4 ´ 12 mm2)之截止頻率(fT)可達12.2 GHz，最大震盪頻率(fmax)可達22 GHz。

In this work, there will be a detail discussion on fabrication and characteristics of collector-up hetrojunction bipolar transistor. In order to obtain a better device performance, an appropriate handle between the base-emitter junction is necessary, because the base-emitter junction in collector-up HBT is usually bigger than the base-collector junction. In this work, ion implantation method is used to reduce the base-emitter junction in order to achieve a current gain larger than 1. The base resistance (RB) and the base-collector junction capacitance (CBC) had been abstracted by using the HBT small signal T-model. A collector-up hetrojunction bipolar transistor (ABC = 2 ´ 4 ´ 12 mm2) with cut off frequency (fT) 12.2 GHz and maximum oscillation frequency (fmax) 22 GHz had been fabricated.

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