以螢光訊號量測單晶矽太陽能電池物理參數之空間分布

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研究生：	鍾穎昌 Ying-Chang Chung
論文名稱：	以螢光訊號量測單晶矽太陽能電池物理參數之空間分布 Spatial distribution measurement of physical parameters for crystalline silicon solar cells using photoluminescence signal
指導教授：	陳昇暉 Sheng-Hui Chen 鍾德元 Te-Yuan Chung
口試委員:
學位類別：	碩士 Master
系所名稱：	理學院 - 照明與顯示科技研究所 Graduate Institute of Lighting and Display Science
畢業學年度：	99
語文別：	中文
論文頁數：	64
中文關鍵詞：	特徵串聯電阻、額外載子生命週期、螢光量測、擴散長度
外文關鍵詞：	photoluminescence measurement, excess carrier lifetime, specific series resistance, diffusion length
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本文使用光激發螢光影像技術，量測載子生命週期、擴散長度和特徵
串聯電阻。短路狀態時，單晶矽太陽能電池會因不同光強造成不同的螢光、
光電壓與光電流，此時便可利用短路螢光模型計算出載子生命週期影像、
光電壓影像與光電流影像，而擴散長度與載子生命週期有關，由此便可得
到擴散長度影像，最後載子生命週期也可推算出j-V 曲線，再藉由j-V 曲
線取其斜率便可計算出特徵串聯電阻影像。而載子生命週期影像帄均值約
為2.56*10^-5 sec，誤差百分比帄均則約為0.69 %；特徵串聯電阻影像帄均
值約為1.42 Ω*cm^2，誤差百分比帄均則約為0.35 %。為了驗證此量測法的
正確性，分別地使用入射光強度為0.82 W/cm^2與0.67 W/cm^2得到各別的
載子生命週期與特徵串聯電阻影像，將載子生命週期影像相除的結果帄均
值為1.05，其標準差為0.14；特徵串聯電阻影像相除的結果帄均值為1.02 ，
其標準差為0.07，所以由標準差可知空間中的每個像素是與入射光無關的，
因此證明了這量測方法的正確性。接著再藉由入射光強度為0.82 W/cm^2 的
載子生命週期影像計算擴散長度影像，而擴散長度影像又分為n 型半導體
的電子與電洞擴散長度影像、p 型半導體的電子與電洞擴散長度影像，其帄
均值各別為66 μm、92 μm、289 μm、165 μm。

The article uses photoluminescence imaging technology to measure excess
carrier lifetime, diffusion length and specific series resistance. Crystalline silicon
solar cells has different photoluminescence, photovoltage and photocurrent
because of different illumination result in the short-circuit state, we can use PL
module in the short-circuit to calculate excess carrier lifetime imaging,
photovoltage imaging and photocurrent imaging. The relationship between
excess carrier lifetime and diffusion length, so we can obtain diffusion length
imaging by excess carrier lifetime imaging. Finally, excess carrier lifetime can
calculate the j-v curve, so we can obtain specific series resistance by the slope of
j-v curve. Excess carrier lifetime imaging average is about 2.56*10^-5 sec ,
percentage error average is about 0.69 %, specific series resistance imaging
average is about1.42 Ω*cm^2 , percentage error average is about0.35 %. In order
to verify the correctness of this measurement method, we choose two
illumination intensity at 0.82 W/cm^2 and 0.67 W/cm^2 , and then we obtain
two excess carrier lifetime imaging and two specific series resistance imaging.
We divide a excess carrier lifetime imaging by another excess carrier lifetime
imaging, and specific series resistance imaging is the same. Average value of the
results are about 1.05±0.14 and 1.02±0.07, we can know that each pixel is
independent of illumination intensity by standard deviations, so we verify the
correctness of this measurement method. On the illumination intensity is
0.82 W/cm^2 ,we use excess carrier lifetime imaging to calculate diffusion
length imaging, the diffusion length imaging is divided into electron and hole
iii
diffusion length imaging of the n-type semiconductor, electron and hole
diffusion length imaging of the p-type semiconductor, average value of the
results are 66 μm,92 μm,289 μm,165 μm.

摘要 ........................................................................................................................ i
Abstract ................................................................................................................. ii
致謝 ...................................................................................................................... iv
目錄 ....................................................................................................................... v
圖目錄 ................................................................................................................. vii
符號表 .................................................................................................................. xi
第一章 緒論 ...................................................................................................... 1
1-1 前言 ...................................................................................................... 1
1-2 研究背景 .............................................................................................. 5
1-3 研究動機 .............................................................................................. 6
1-4 論文架構 .............................................................................................. 7
第二章 理論背景 .............................................................................................. 9
2-1 太陽能電池發電原理 .......................................................................... 9
2-2 Pixel-By-Pixel 演算法 .................................................................. 10
2-3 光激發螢光原理 ................................................................................ 11
2-3-1 吸收係數 ................................................................................. 15
2-3-2 產生率 ..................................................................................... 16
2-3-3 複合率 ..................................................................................... 18
vi
2-3-4 螢光與額外載子之關係 ......................................................... 20
2-3-5 螢光與端電流之關係 ............................................................. 23
2-4 串聯電阻 ............................................................................................ 30
2-4-1 太陽能電池等效電路模型 ..................................................... 30
2-4-2 特徵串聯電阻 ......................................................................... 31
第三章 實驗步驟 ............................................................................................ 35
3-1 實驗設施要求與架構 ........................................................................ 35
3-1-1 實驗設施要求 ......................................................................... 35
3-1-2 實驗架構 ................................................................................. 37
3-2 實驗流程 ............................................................................................ 38
3-3 數據處理 ............................................................................................ 39
3-4-1 數值解—牛頓法 ..................................................................... 41
3-4-2 數值解—二維牛頓法 ............................................................. 42
3-4 結果與討論 ........................................................................................ 43
第四章 結論 .................................................................................................... 56
第五章 未來展望 ............................................................................................ 58
參考文獻 ............................................................................................................. 59
附錄 ..................................................................................................................... 64

                                

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