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研究生： 張家綸
Chia-Lun Chang
論文名稱： 金/銀擴散鍵合研究及其應用在發光二極體
Fabrication of thin-GaN LED by Ag/Au wafer bonding
指導教授： 劉正毓
Cheng-Yi Liu
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 化學工程與材料工程學系
Department of Chemical & Materials Engineering
畢業學年度： 95
語文別： 中文
論文頁數： 47
中文關鍵詞： 二極體
外文關鍵詞： Thin-GaN LED, Wafer bonding
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    • 近年來Thin-GaN LED結構的發展已經越來越被受重視，因為以GaN為材料的Thin-GaN LED可以被廣泛運用於各類的照明系統，製作Thin-GaN LED有一個重要的關鍵技術，那就是將原本被磊晶於Sapphire上的GaN薄膜轉移至高散熱性與高導電性的基板上。其中最被廣泛運用的薄膜轉移技術即為晶圓鍵合(wafer bonding)。本研究將低溫晶圓鍵合的技術運用於Thin-GaN LED的整合，利用150 ℃的低溫晶圓鍵合技術將GaN薄膜鍵合至Si晶圓，然後再使用雷射剝離的技術將Sapphire移除，低溫晶圓鍵合技術可以避免因材料之間的CTE (Coefficient of Thermal Expansion) mismatch所衍生出來的問題。

    The recent-developed thin-GaN LED structure has been attracted serious attention, which enables GaN-based LED for the lighting applications. To fabricate thin-GaN LED, it requires the transferring technique of the original epi-GaN layer onto better thermal and electrical conduction substrates. The transferring substrate should be attached with GaN epi-layer by wafer bonding. In this research, we will study fabrications of thin GaN LEDs by low-temperature wafer bonding. A low temperature wafer bonding technique need to be developed to bond GaN wafer with Si wafer. (less than 150 °C) The low temperature bonding process avoids the thermal stress problem and enhance the better results after LLO process (Laser Litf-Off).

    中文摘要…………………………………………………………….I 英文摘要………………………………………………………….II 致謝……………………………………………………………….III 目錄……………………………………………………………….IV 圖目錄…………………………………………………………….VI 表目錄………………………………………………………….VIII 第一章 序論……………………………………………………….1 第二章 文獻回顧………………………………………………….3 2-1 Light Emitting Diode…………………………………3 2-2 晶圓鍵合(Wafer bonding)…………………………….6 2-3 Matano method………………………………………….8 2-4 拉曼散射(Raman scattering)……………………….10 2-5 Laser lift off……………………………………….13 第三章 實驗方法與步驟……………………………………….15 3-1 實驗的材料…………………………………………….15 3-2 實驗步驟……………………………………………….15 3-3 鍵結金屬層的選擇和蒸鍍…………………………….17 3-4 晶圓鍵合程序………………………………………….18 3-5 金銀介面原子濃度分佈的量測……………………….22 3-6 金銀鍵合運用於Thin-GaN LED的整合……………….23 3-7 Thin-GaN LED 電性與光性的量測…………………….25 3-8 N-GaN 表面應力的量測……………………………….26 第四章 結果與討論……………………………………………….28 4-1 金銀交互擴散係數的計算…………………………….28 4-2 鍵結溫度對Thin-GaN LED的影響…………………….30 4-3 鍵結溫度對N-GaN 表面應力的影響………………….34 4-4應力改變對MQW的影響…………………………………40 第五章 結論……………………………………………………….44 參考文獻………………………………………………………….46

    1. E. Fred Schubert, “Light-emitting diodes”, Cambridge University Press, 2006, New York.
    2. M. Alexe and U. GÖsele, “Wafer Bonding Application and Technology”, Springer, 2004, Berlin.
    3. U. GÖsele, Y. Bluhm, G. Kästner, P. Kopperschmidt, G. Kräuter, R. Scholz, A. Schumacher, St. Senz, and Q.-Y. Tong, Y.-L. Chao, and T. H. Lee, “Fundamental issues in wafer bonding” J. Vac. Sci. Technol. A, 17 (4), p.1145, 1999.
    4. C. F. Jerez-Hanckes, D. Qiao and S. S. Lau, “A study of Si wafer bonding via methanol capillarity”, Materials Chemistry and Physics 77, 751–754, 2002.
    5. W. B. Yu, J. Wei, C. M. Tan and G. Y. Huang, “Mathematical model of low-temperature wafer bonding under medium vacuum and its application”, IEEE Transactions on Advanced Packaging 28 (4) p.650-658, 2005.
    6. H. B. Huntington, in Diffusion in Solids: Recent Developments, edited by A. S. Nowick and J. J. Burton _Academic, New York, 1979, pp. 303–352.
    7. P. H. Chen, C. L. Lin and C. Y. Liu, “Amourphous Si/Au wafer bonding”, Appl. Phys. Lett, 90 (13) 132120, 2007.
    8. E. Robert. Reed-Hill and Reza Abbaschian, Physical Metallurgy Principles, 3th ed, PWS-Kent Pub, 1992, Boston.
    9. Dimitry Kirillov, Heon Lee, and James S. Harris, Jr., “Raman scattering study of GaN films”, Journal of Applied Physics, 88 (7) p.4058-4062, 1996.
    10. J. M. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J. –M. Wagner and F. Bechstedt, “Raman spectra of isotopic GaN”, Physical Review B, 56 (22), p.14399-14406, 1997.
    11. T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal stress in GaN epitaxial layers grown on sapphire substrates” Appl. Phys. Lett. 77, 4389 (1995).
    12. J. Xu, R. Zhang, Y. O. Wang, X. Q. Xiu, B. Shen, S. L. Gu, Y. Shi, Z. G. Liu and Y. D. Zheng, “Preparation of large area freestanding GaN by laser lift-off technology”, Mater Lett, 56 p.43, (2002).
    13. X. C. Wang, G. C. Lim, W. Liu, C. B. Soh and S. J. Chua, “Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN”, Appl Surf Sci, 252 p.2071, (2005).
    14. D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong and Hui. Yang, “Stress and its effect on optical properties of GaN epilayers grown on Si (111), 6H-SiC (0001), and c-plane sapphire”, Appl. Phys. Lett. 83, p.677, (2003).

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