本論文係以TSMC 0.18-μm CMOS製程，研製接收機射頻前端電路與相關之被動元件。被動元件的部份主要是探討旁路電容佈局之連線效應，而設計之電路主要包括應用於X頻段之疊接架構功率限制低雜訊放大器、用於Wimax系統之雜訊消除結構低雜訊放大器、適用於超寬頻系統之射頻接地(RF-grounding)寬頻矩陣型分佈式放大器、使用在X頻段之差動壓控振盪器、兩個用於Wimax系統之四相位壓控振盪器，以及用於K頻段之變壓器回授型壓控振盪器。
各電路之量測特性如下：低雜訊放大器：11 GHz疊接低雜訊放大器增益為14.5 dB，雜訊指數為2.8 dB，輸入反射損耗為-11.3 dB，輸出反射損耗為-23.19 dB，而輸入1 dB壓縮點為-13 dB，三階截斷點為+2 dB，總功率消耗21.24 mW；3.5 GHz的雜訊消除低雜訊放大器，增益為10 dB，雜訊指數為3.1 dB，輸入反射損耗為-24 dB，輸出反射損耗為-11 dB，而輸入1 dB壓縮點為-6.5 dB，三階截斷點為+4.5 dB，總功率消耗17.76 mW，若是調整到最佳之消除雜訊偏壓點，雜訊指數可降為2.5 dB；至於射頻接地寬頻矩陣型分佈式放大器，其最小增益為10.4 dB，大於10.4 dB之頻寬範圍為3.6 ~ 16.1 GHz，輸入反射損耗為-4.5 ~ -21 dB，輸出反射損耗在4.5 ~ 16.1 GHz的範圍內，小於-10 dB，最低雜訊指數為6.5 dB，其輸入1 dB壓縮點大於-11.5 dB，三階截斷點大於+1 dB，總功率消耗33.6 mW。壓控振盪器之量測特性：10.7 GHz的壓控振盪器，其頻率可調範圍為220 MHz，輸出功率為-6.44 ~ -4.54 dB，離主頻100 KHz之相位雜訊為-85.22 dBc/Hz，離主頻1 MHz之相位雜訊為-104.13 dBc/Hz，振盪器本身消耗功率為21.6 mW；3.5 GHz的四相位壓控振盪器I，頻率可調範圍為300 MHz，輸出功率為-7.11 ~ -8.71 dB，離主頻100 KHz之相位雜訊為-95 dBc/Hz，離主頻1 MHz之相位雜訊為-122.9 dBc/Hz，振盪器本身消耗功率為18 mW；3.5 GHz的四相位壓控振盪器II，頻率可調範圍為210 MHz，輸出功率為-1.25 ~ -4.02 dB，離主頻100 KHz之相位雜訊為-96.65 dBc/Hz，離主頻1 MHz之相位雜訊為-124.96 dBc/Hz，振盪器本身消耗功率為18 mW；23.7 GHz變壓器回授式壓控振盪器，頻率可調範圍為280 MHz，輸出功率為0.524 ~ 2.31 dB，離主頻1 MHz之相位雜訊為-118.7 dBc/Hz，振盪器本身消耗功率為12 mW。

The thesis describes the passive and active circuits for receiver front end, which are both implemented in TSMC 0.18-μm CMOS technology. The study on passive circuits is about various types of parallel capacitors. The implemented circuits include a cascode power constrained low noise amplifier for X band, a noise canceling low noise amplifier for Wimax applications, an RF-grounding wideband matrix distributed amplifier fo UWB applications, a differential voltage controlled oscillator for X band, two quadrature voltage controlled oscillators for Wimax applications, and a transformer feedback voltage controlled oscillator for K band.
In low noise amplifiers, the 11 GHz cascode power constrained low noise amplifier achieves 14.5 dB power gain, 2.8 dB noise figure, -11.3 dB input return loss, and -23.19 dB output return loss. The 1-dB gain compression point and the input third-order intercept point are -13 dBm and +2 dBm, respectively, and total power consumption is 21.4 mW; The 3.5 GHz noise canceling low noise amplifier achieves 10 dB power gain, 3.1 dB noise figure, -24 dB input return loss, and -11 dB output return loss. The 1-dB gain compression point and the input third-order intercept point are -6.5 dBm and +4.5 dBm, respectively, and total power consumption is 17.76 mW. By using optimum bias, the noise figure is 2.5 dB; The RF-grounding wideband matrix distributed amplifier achieves 10.4 dB power gain from 3.6 to 16.1 GHz. The input return loss is -4.5 ~ -21 dB, and the output return loss is lower than -10 dB from 4.5 to 16.1 GHz. The minimum noise figure is 6.5 dB. The 1-dB gain compression point is higher than -11.5 dBm, the input third-order intercept point is higher than +1 dBm, and total power consumption is 33.6 mW.
In voltage controlled oscillators, the 10.7 GHz differential voltage controlled oscillator has a tuning range of 220 MHz, and the output power is -6.44 ~ -4.54 dBm. The phase noise at 100 KHz and 1 MHz achieve -85.55 dBc/Hz and -104.13 dBc/Hz, respectively, and the power consumption of the VCO core is 3.17 mW; The quadrature voltage controlled oscillator I has a tuning range of 300 MHz, and the output power is -7.11 ~ -8.71 dBm. The phase noise at 100 KHz and 1 MHz achieve -95 dBc/Hz and -122.9 dBc/Hz, respectively, and the power consumption of the VCO core is 18 mW; The quadrature voltage controlled oscillator II has a tuning range of 210 MHz, and the output power is -1.25 ~ -4.02 dBm. The phase noise at 100 KHz and 1 MHz achieves -96.65 dBc/Hz and -124.96 dBc/Hz, respectively, and the power consumption of the VCO core is 18 mW; The 23.7 GHz transformer feedback voltage controlled oscillator has a tuning range of 280 MHz, and the output power is 0.524 ~ 2.31 dBm. The phase noise at 1 MHz offset frequency achieves a -118.7 dBc/Hz, and the power consumption of the VCO core is 12 mW.

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