隨著技術的不斷進步，矽光子學正在不斷發展和演進，此技術的優勢在與能與傳統CMOS半導體製程實現光子與電子元件的高度集成。而群速度色散對於高速光通訊、數據傳輸和非線性光學方面舉足輕重。因此本論文首先使用有限元法(FEM)對我們所需要的波導結構進行色散模擬，第一部分，我們透過模擬在不同高度及不同寬度的情況下，觀察幾何形狀調製色散的利弊；第二部分，在確認了氮化矽波導幾何形狀後，使用不同披覆層材料並在上方逐漸增加披覆層的厚度，模擬其沉積色散調製後的變化。接著我們介紹微環形共振腔的製程步驟，並且驗證了原子層沉積不會對波導造成額外損耗及品質因子產生影響。
在色散量測上，我們使用了二氧化鉿(HfO2)及氧化鋁(Al2O3)兩種材料披覆在氮化矽微環形共振腔上，透過原子層沉積能精確控制沉積厚度，能精準的調製色散。在沉積了二氧化鉿披覆層後，我們能將氮化矽波導的色散從-274 ps/ nm-km調製到-205 ps/nm-km ;除此之外，在沉積氧化鋁披覆層後，能將波導色散從-213 ps/nm-km調製到46 ps/nm-km，實驗結果顯示:使用氧化鋁披覆層能將波導色散調製到近零色散，並且在增加披覆層厚度後，更能將正常色散調製為異常色散，這意味著我們能更靈活的進行色散調製。
最後我們也研究了如何提高微環形共振腔的品質，透過飛秒雷射對微環形共振腔進行局部退火，其中也使用拉曼(Raman)光譜及原子力顯微鏡(Atomic force microscope)來尋找對氮化矽薄膜最有幫助的退火功率，我們發現特定功率對於微環形共振腔的品質因子提升有幫助，幅度約為1.3倍。
本論文透過雷射退火來提高微環形共腔的品質，並且提供了不會對波導增加額外損耗、精準及靈活調製色散的方式。

With the continuous advancement of technology, silicon photonics is undergoing constant development and evolution. One of the key advantages of this technology lies in the high integration of both photonic and electronic components within the traditional CMOS semiconductor fabrication process. Group velocity dispersion plays a crucial role in high-speed optical communication, data transmission, and nonlinear optics. Therefore, in this thesis, we first conducted dispersion simulations using finite element method on the required waveguide structures. In the first part, we observed the pros and cons of geometric modulation of dispersion under different heights and widths. In the second part, after confirming the geometry of the silicon nitride waveguide, we simulated the variation in deposited dispersion modulation by using different coating materials and gradually increasing the thickness of the coating layer.
Next, we introduced the fabrication steps of the micro-ring resonator and verified that atomic layer deposition does not cause additional losses or affect the quality factor of the waveguide. For dispersion measurement, we used two materials, Hafnium Dioxide (HfO2) and Aluminum Oxide (Al2O3), coated on the silicon nitride micro-ring resonator.
Through atomic layer deposition, we could precisely control the deposition thickness and accurately modulate the dispersion. With the deposition of Hafnium Dioxide coating, we were able to modulate the dispersion of the silicon nitride waveguide from -274 ps/nmkm to -205 ps/nm-km. Furthermore, with the deposition of Aluminum Oxide coating, we could modulate the waveguide dispersion from -213 ps/nm-km to 46 ps/nm-km. The experimental results showed that using Aluminum Oxide coating could tune the waveguide dispersion to near-zero dispersion. Additionally, increasing the coating thickness could further transform normal dispersion into anomalous dispersion, indicating greater flexibility in dispersion tuning.
Finally, we investigated methods to enhance the quality of the micro-ring resonator. Through femtosecond laser annealing, we conducted localized annealing on the microring resonator. Raman spectroscopy and Atomic Force Microscope were utilized to identify the annealing power most beneficial to the silicon nitride film. We found that
specific power levels contributed to a 1.3-fold improvement in the quality factor of the micro-ring resonator.
This thesis demonstrates the enhancement of micro-ring resonator quality through laser annealing, providing a means of precise and flexible dispersion modulation without
introducing additional losses to the waveguide.

[1] W. Jin et al., "Hertz-linewidth semiconductor lasers using CMOS-ready ultra-high-Q microresonators," Nature Photonics, vol. 15, no. 5, pp. 346-353, 2021.
[2] M. Rumi and J. W. Perry, "Two-photon absorption: an overview of measurements and principles," Advances in Optics and Photonics, vol. 2, no. 4, pp. 451-518, 2010.
[3] "https://zh.wikipedia.org/zh-tw/%E5%85%89%E5%AD%B8%E7%92%B0%E5%BD%A2%E8%AB%A7%E6%8C%AF%E5%99%A8."
[4] K. De Vos, I. Bartolozzi, E. Schacht, P. Bienstman, and R. Baets, "Silicon-on-Insulator microring resonator for sensitive and label-free biosensing," Optics express, vol. 15, no. 12, pp. 7610-7615, 2007.
[5] A. Bell, "Review and analysis of laser annealing," Rca Review, vol. 40, no. 3, p. 295, 1979.
[6] J. Van Vechten, R. Tsu, and F. Saris, "Nonthermal pulsed laser annealing of Si; plasma annealing," Physics Letters A, vol. 74, no. 6, pp. 422-426, 1979.
[7] C. White, B. Appleton, S. Wilson, J. Poate, and J. Mayer, "Supersaturated alloys, solute trapping, and zone refining," Laser Annealing of Semiconductors, pp. 111-146, 1982.
[8] M. Miyasaka and J. Stoemenos, "Excimer laser annealing of amorphous and solid-phase-crystallized silicon films," Journal of applied physics, vol. 86, no. 10, pp. 5556-5565, 1999.
[9] K. Sakaike, S. Higashi, H. Murakami, and S. Miyazaki, "Crystallization of amorphous Ge films induced by semiconductor diode laser annealing," Thin Solid Films, vol. 516, no. 11, pp. 3595-3600, 2008.
[10] K. Huet et al., "Pulsed laser annealing for advanced technology nodes: Modeling and calibration," Applied Surface Science, vol. 505, p. 144470, 2020.
[11] H. Lin, Y. Huang, W. Shih, Y. Chen, and W. Chang, "Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications," BMC chemistry, vol. 13, no. 1, pp. 1-6, 2019.
[12] A. Szekeres et al., "Laser technology for synthesis of AlN films: influence of the incident laser fluence on the films microstructure," in Journal of Physics: Conference Series, 2012, vol. 356, no. 1, p. 012003: IOP Publishing.
[13] K. Kim, S. Kim, and S. Y. Lee, "Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method," Current Applied Physics, vol. 12, no. 2, pp. 585-588, 2012.
[14] H. Wang, L. Tan, and E. Chor, "Pulsed laser annealing of Be-implanted GaN," Journal of applied physics, vol. 98, no. 9, 2005.
[15] F. Cristiano et al., "Defect evolution and dopant activation in laser annealed Si and Ge," Materials Science in Semiconductor Processing, vol. 42, pp. 188-195, 2016.
[16] S. Dutta, H. E. Jackson, and J. Boyd, "Reduction of scattering from a glass thin‐film optical waveguide by CO2 laser annealing," Applied Physics Letters, vol. 37, no. 6, pp. 512-514, 1980.
[17] S. Dutta, H. E. Jackson, J. Boyd, F. S. Hickernell, and R. Davis, "Scattering loss reduction in ZnO optical waveguides by laser annealing," Applied Physics Letters, vol. 39, no. 3, pp. 206-208, 1981.
[18] T. Meany et al., "Laser written circuits for quantum photonics," Laser & Photonics Reviews, vol. 9, no. 4, pp. 363-384, 2015.
[19] D. Tan, X. Sun, and J. Qiu, "Femtosecond laser writing low-loss waveguides in silica glass: highly symmetrical mode field and mechanism of refractive index change," Optical Materials Express, vol. 11, no. 3, pp. 848-857, 2021.
[20] "https://zh.wikipedia.org/zh-tw/%E5%AD%A4%E5%AD%90_(%E5%85%89%E5%AD%B8."
[21] A. Ghatak and K. Thyagarajan, An introduction to fiber optics. Cambridge university press, 1998.
[22] G. Agrawal, "Nonlinear Fiber Optics, 5th edn. Academic," ed: Oxford, 2013.
[23] P.-H. Wang, N.-L. Hou, and K.-L. Ho, "Dispersion Engineering of Waveguide Microresonators by the Design of Atomic Layer Deposition," in Photonics, 2023, vol. 10, no. 4, p. 428: MDPI.
[24] Q. Lin, O. J. Painter, and G. P. Agrawal, "Nonlinear optical phenomena in silicon waveguides: modeling and applications," Optics express, vol. 15, no. 25, pp. 16604-16644, 2007.
[25] "Ellis, A.D. Dispersion Management for High-Speed Optical Communications. IEEE J. Sel. Top. Quantum Electron. 2002, 8(3), 418-431.."
[26] Y. Hong, Y. Hong, J. Hong, and G.-W. Lu, "Dispersion optimization of silicon nitride waveguides for efficient four-wave mixing," in Photonics, 2021, vol. 8, no. 5, p. 161: MDPI.
[27] A. Kordts, M. H. Pfeiffer, H. Guo, V. Brasch, and T. J. Kippenberg, "Higher order mode suppression in high-Q anomalous dispersion SiN microresonators for temporal dissipative Kerr soliton formation," Optics letters, vol. 41, no. 3, pp. 452-455, 2016.
[28] M. H. Pfeiffer et al., "Photonic Damascene process for integrated high-Q microresonator based nonlinear photonics," Optica, vol. 3, no. 1, pp. 20-25, 2016.
[29] Y. Xuan et al., "High-Q silicon nitride microresonators exhibiting low-power frequency comb initiation," Optica, vol. 3, no. 11, pp. 1171-1180, 2016.
[30] A. Gondarenko, J. S. Levy, and M. Lipson, "High confinement micron-scale silicon nitride high Q ring resonator," Optics express, vol. 17, no. 14, pp. 11366-11370, 2009.
[31] S.-P. Wang, T.-H. Lee, Y.-Y. Chen, and P.-H. Wang, "Dispersion engineering of silicon nitride microresonators via reconstructable SU-8 polymer cladding," Micromachines, vol. 13, no. 3, p. 454, 2022.
[32] A. Khanna et al., "Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths," Optics express, vol. 22, no. 5, pp. 5684-5692, 2014.
[33] J. Riemensberger, K. Hartinger, T. Herr, V. Brasch, R. Holzwarth, and T. J. Kippenberg, "Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition," Optics express, vol. 20, no. 25, pp. 27661-27669, 2012.
[34] K. M. Kiani et al., "Four-wave mixing in high-Q tellurium-oxide-coated silicon nitride microring resonators," OSA Continuum, vol. 3, no. 12, pp. 3497-3507, 2020.
[35] M. P. Marisova, A. V. Andrianov, G. Leuchs, and E. A. Anashkina, "Dispersion tailoring and four-wave mixing in silica microspheres with germanosilicate coating," in Photonics, 2021, vol. 8, no. 11, p. 473: MDPI.
[36] K. Guo et al., "Experimentally validated dispersion tailoring in a silicon strip waveguide with alumina thin-film coating," IEEE Photonics Journal, vol. 10, no. 1, pp. 1-8, 2018.
[37] "https://zh.wikipedia.org/wiki/%E6%9C%89%E9%99%90%E5%85%83%E7%B4%A0%E6%B3%95."
[38] I. H. Malitson, "Interspecimen comparison of the refractive index of fused silica," Josa, vol. 55, no. 10, pp. 1205-1209, 1965.
[39] H. R. Philipp, "Optical properties of silicon nitride," Journal of the Electrochemical Society, vol. 120, no. 2, p. 295, 1973.
[40] M. Al-Kuhaili, "Optical properties of hafnium oxide thin films and their application in energy-efficient windows," Optical Materials, vol. 27, no. 3, pp. 383-387, 2004.
[41] I. H. Malitson and M. J. Dodge, "Refractive index and birefringence of synthetic sapphire," J. Opt. Soc. Am, vol. 62, no. 11, p. 1405, 1972.
[42] S. Xiao, M. H. Khan, H. Shen, and M. Qi, "Compact silicon microring resonators with ultra-low propagation loss in the C band," Optics express, vol. 15, no. 22, pp. 14467-14475, 2007.
[43] "https://ctechnano.com/coating-technologies/what-is-atomic-layer-deposition-ald/."
[44] "https://www.fiberoptics4sale.com/blogs/wave-optics/phase-velocity-group-velocity-and-dispersion."
[45] S. Fujii and T. Tanabe, "Dispersion engineering and measurement of whispering gallery mode microresonator for Kerr frequency comb generation," Nanophotonics, vol. 9, no. 5, pp. 1087-1104, 2020.
[46] "https://www.rp-photonics.com/bandwidth.html."
[47] J. Bandet, B. Despax, and M. Caumont, "Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy," Journal of applied physics, vol. 85, no. 11, pp. 7899-7904, 1999.
[48] G. Scardera, T. Puzzer, I. Perez-Wurfl, and G. Conibeer, "The effects of annealing temperature on the photoluminescence from silicon nitride multilayer structures," Journal of Crystal Growth, vol. 310, no. 15, pp. 3680-3684, 2008.
[49] J. Dobes et al., "Effect of mechanical vibration on Ra, Rq, Rz, and Rt roughness parameters," The International Journal of Advanced Manufacturing Technology, vol. 92, pp. 393-406, 2017.
[50] A. Mackus, A. Bol, and W. Kessels, "The use of atomic layer deposition in advanced nanopatterning," Nanoscale, vol. 6, no. 19, pp. 10941-10960, 2014.
[51] M. Biercuk, D. Monsma, C. Marcus, J. Becker, and R. Gordon, "Low-temperature atomic-layer-deposition lift-off method for microelectronic and nanoelectronic applications," Applied Physics Letters, vol. 83, no. 12, pp. 2405-2407, 2003.