發展環保能源科技已成為二十一世紀各國研究重心，其中開發再生能源中的太陽能，一直是視為各先進國家矚目的焦點。
然而對於現今大多數太陽能電池而言低轉換效率始終是存在的問題，其主要原因之ㄧ是來自於矽材料內部的缺陷所導致，而對於矽晶太陽能電池來說，晶圓表面的缺陷更是整體缺陷的主要來源，因此本研究預計在矽晶材料上成長負電荷介質材料來製作表面鈍化層，以成長高效率矽晶太陽能電池。
負電荷介質材料的選擇可減少太陽能電池自由載子之表面復合，特別是對於p型的晶圓而言更能提升載子傳遞效率進而提升矽晶太陽能電池轉換效率。
一般而言，達到高效率工業生產太陽能電池之重要的技術之ㄧ在於對結晶矽(Crystalline silicon)表面作表面之鈍化(Surface passivation)，而隨著製程厚度的越來越薄也使得此技術更顯的重要。文獻指出Al2O3或是AlOxNy材料比傳統的含氫之氮化矽具有更佳的鈍化效果，可廣泛應用高摻p型單晶矽表面，這是由於材料內部在成長之後形成的大量負電荷所導致。
除此之外，材料對於可見光及近紅外線的波段也幾乎不會產生吸收。另ㄧ方面由於AlOxNy含有比Al2O3更大量的負電荷，因此我們將在矽晶材料上成長負電荷介質材料AlOxNy以成長矽晶太陽能電池，並達到太陽能電池轉換效率提升之目標。

The researches on the environment friendly and energy saving technologies have been more and more important nowadays. Among creating recycled energy, solar cell is especially an important topic in many developed countries. However, the low conversion efficiency is still an existing problem in silicon solar cells. One of the important reasons is from the internal defect of silicon material. To silicon wafer based solar cells, the surface defect is especially the principle part among the entire defect. Therefore, our research focused on fabricating passivation layer of negative charge on silicon wafer based solar cell. We expected to apply this kind of passivation layer for achieving high efficiency silicon solar cells.
By applying the negative charge material on the surface of silicon solar cells, the recombination effect of free carriers occurring near the surface of solar cells can be reduced. Especially to the p type silicon solar cells, this surface passivation layer can effectively improve possibility of carrier transportation and increase the final conversion efficiency of solar cells. In general, surface passivation technique is becoming more and more important due to the thinner thickness of solar cells are also developed recently. Some one proposed that the material usage of Al2O3 and AlOxNy would have better performance in passivated surface of solar cells than conventional materials. Therefore, these kinds of materials have widespread application on surface of highly doping p type silicon wafer because that these have lots of negative charge which forms surface field-effect to improve the outcome of surface passivation. Besides, these materials also have high transparency from the spectrum range of visible to infrared wavelength. In another hand, AlOxNy material exist larger negative charge than Al2O3 material. Therefore, we choose this material of AlOxNy for fabricating the silicon solar cells.

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