鍺浮點記憶體之研製｜國立中央大學博碩士論文系統

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研究生：	吳榮軒 Jung-Hsiuan Wu
論文名稱：	鍺浮點記憶體之研製 Ge floating dot memory
指導教授：	李佩雯 Pei-Wen Li
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系 Department of Electrical Engineering
畢業學年度：	94
語文別：	中文
論文頁數：	60
中文關鍵詞：	非揮發性記憶體、鍺浮點記憶體
外文關鍵詞：	Ge floating dot memory, nonvolatile memory
相關次數：	點閱：9 下載：0
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在本論文中，利用低壓化學氣相沈積系統沈積複晶矽鍺團並藉由氧化之方式形成鍺奈米晶粒製作出鍺浮點記憶體。在製作過程中，我們利用橢圓儀開發了非破壞性的表面狀態檢測方法，以判別晶粒形成與否。此外，鍺浮點記憶體在閘極蝕刻這部分也是製程中之重要關鍵，因為鍺浮點記憶體閘堆疊層中之鍺奈米晶粒是否蝕刻乾淨會嚴重影響後續之製程與元件特性。
在製作鍺浮點記憶體之同時，我們也製作了矽鍺浮閘記憶體、矽鍺浮閘電容和鍺浮點電容。我們利用製作出來之元件做了以下幾項電性量測包含：電容量測、儲存時間量測、脈波量測、耐用性量測等。藉由以上之量測，我們可以清楚知道我們製作元件之特性，並得知影響元件特性之原因與元件結構之關鍵點。

Abstract
In this thesis, we utilize the method of thermal oxidation poly SiGe to form Ge nanocrystals and then fabricate the Ge nanocrystals transistor. In the process of fabrication, we have also developed the undestructive method to check surface state of the sample by Ellipsometer. Besides, the gate etching in formation of Ge nanocrystals transistor is very important. Because removing Ge nanocrystals embedded in gate stacked greatly effects the following fabrication and characteristics of device.
We have fabricated Ge nanocrystals MOS capacitors and FET by using the method of thermal oxidation poly SiGe to form Ge nanocrystals. After formation, we take some measurements included capacitance measurement, Retention time measurement, pulse width measurement and endurance measurement. According to the result of measurements we can easily realize the characteristics of our device and the problems of device structure.

目錄
第一章 介紹 ...............................................................1
1-1 前言.................................................................1
1-2 研究動機.............................................................1
1-3 研究目的與應用.......................................................3
第二章 快閃記憶體之操作原理........................................7
2-1 前言.................................................................7
2-2 快閃記憶體之寫入與抹除原理...........................................7
2-3 穿隧機制.............................................................8
2-3-1 F-N 穿隧效應.....................................................8
2-3-2 通道熱電子注入...................................................9
2-3-3 直接穿隧效應.....................................................9
2-4 結論................................................................10
第三章 鍺浮點記憶體之製程與開發.......................................14
3-1 前言.... ...........................................................14
3-2 閘堆疊層製作........................................................14
3-2-1 沈積系統........................................................14
3-2-2 閘堆疊層沈積流程................................................15
3-2-3 複晶矽鍺薄膜之潛伏期............................................15
3-2-4 複晶矽鍺層沈積實驗..............................................16
3-2-5 非破壞性表面狀態之檢測..........................................17
3-2-5.1 橢圓儀系統與操作原理........................................17
3-2-5.2 橢圓儀模擬..................................................18
3-2-6 氧化複晶矽鍺團形成鍺奈米晶粒....................................20
3-3 閘極製作............................................................22
3-3-1 閘極蝕刻之時間..................................................22
3-3-2 接觸窗口之問題..................................................22
第四章 元件量測與分析...................................................35
4-1 前言................................................................35
4-2 矽鍺浮閘記憶體之失敗性分析..........................................35
4-2-1 矽鍺浮閘電容之電流密度對電場(J-E)量測...........................35
4-2-2 矽鍺浮閘電容之電容對電壓(C-V)量測...............................36
4-2-3 PN 接面之量測與分析.............................................39
4-2-4 矽鍺浮閘記憶體之失敗性分析......................................40
4-3 鍺浮點電容之量測....................................................41
4-3-1 鍺浮點電容之C-V 分析...........................................41
4-3-2 儲存時間測試...................................................42
4-4 浮點電晶體量測.....................................................43
4-4-1 儲存時間測試....................................................43
4-4-2 脈波量測........................................................43
4-4-3 耐用性量測......................................................44
4-5結論................................................................45
第五章 總結與未來展望..................................................58
參考文獻..................................................................59

                                

參考文獻資料
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