摘要
當傳統雙載子電晶體在基極中注入鍺而形成矽鍺薄膜，成功製造出矽鍺異質接面電晶體，其性能將比起傳統的矽電晶體優越許多。在論文中將介紹矽鍺異質接面電晶體與傳統矽電晶體的差異，比較其基本電流操作的特性。本論文將針對VBIC模型應用在tsmc SiGe 0.18μm，高功率元件(HV)模型的參數萃取以及建立，其射極面積為0.6x10.16μm2。
在電路設計上，傳統雙載子電晶體的模型以SPICE Gummel Poon模型為主，至今已經超過二十年以上。然而，對於先進製程而言，SPICE Gummel Poon所模擬的結果無法包含現今小尺寸電晶體元件所有的效應，有鑒於此，新的模型相繼被發表，分別有VBIC，Mextram以及HICUM等模型，企圖在新一代的技術當中取代SPICE Gummel Poon的地位而成為新的標準。在本論文中比較這些先進的精簡模型，討論其針對SPICE Gummel Poon模型無法詳細描述的效應，加以改善，以期能夠精準的描述先進製程的元件。
最後將比較異質接面電晶體在射極寬度以及長度改變時，對於高頻特性的性能做個比較，有利於將來在電路設計時挑選電晶體或是在設計電晶體元件時能有選擇的依據。

Abstract
The Silicon Germanium Hetero-junction Bipolar Transistor is fabricated by introducing Germanium into the base of conventional Silicon Bipolar Junction Transistor (Si BJT) to form the SiGe film. The performance of Silicon Germanium Hetero-junction Bipolar Transistors (SiGe HBT) is superior to silicon bipolar junction transistor in its high frequency performances. In this paper, the difference between the SiGe HBT and Si BJT will be discussed in detail, such as the comparison of their characteristics of current. In this thesis, we will focus on the VBIC model extraction of tsmc SiGe 0.18μm high power device with emitter area of 0.6x10.16μm2.
The SPICE Gummel Poon model has been the main stream of the conventional BJT model and as the workhorse in the circuit design for more than twenty years. However, in the advanced technology, the SPICE Gummel Poon model can’t include all the effect of the advanced devices with small feature size. Consequently, the new models were presented, including VBIC, Mextram and HICUM models, to replace with the SPICE Gummel Poon model in the new technology. In this thesis, the comparisons of these compact models will be described, and the improved advantages of these compact models over the SPICE Gummel Poon model will be described. A step-by-step parameter extraction for VBIC model will be performed in 0.18μm SiGe HBT. A completed VBIC model has successfully established and these compact models can precisely describe the behavior of the 0.18μm SiGe advanced devices.
The last part in this thesis, we will discuss the high frequency performance of a series of SiGe HBT devices which have various geometry. The comparisons of high frequency performance are helpful to choose the device for the circuit design in the future.

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