n型氮化鎵金氧半場效電晶體｜國立中央大學博碩士論文系統

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研究生：	陳威宏 wei-hung chen
論文名稱：	n型氮化鎵金氧半場效電晶體 Investigation of Characteristics and Process of n-type GaN-based MOSFET Devices
指導教授：	李清庭 Ching-Ting Lee
口試委員:
學位類別：	碩士 Master
系所名稱：	理學院 - 光電科學與工程學系 Department of Optics and Photonics
畢業學年度：	91
語文別：	中文
論文頁數：	70
中文關鍵詞：	氮化鎵、金氧半場效電晶體、光電化學、氧化鎵
外文關鍵詞：	PEC, MOSFET, GaN, Ga2O3
相關次數：	點閱：17 下載：0
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論文摘要
由於氮化鎵具備半導體材料當中鍵結最強的離子性，難以用傳統的方法進行蝕刻及氧化之製程，所以一般金氧半場效電晶體(MOSFETs)的閘極氧化物多為利用蒸鍍或濺鍍的方式製作，然而氧化物易受到蒸鍍或濺鍍的製程條件影響導致品質不佳，因此本篇論文主要利用新提出的光增強濕式的氧化方式，稱作光電化學的氧化方法(Photoelectrochemical oxidation method，PEC)直接對n型氮化鎵材料表面進行氧化，可有效改善用蒸鍍或濺鍍方式所製作之氧化層品質不佳的問題。
研究中發現藉由調整溶液PH值、照光強弱等方式可控制氧化鎵成長的速率，而由光激發光譜中顯示氧化鎵具有優秀的表面保護作用。經由對氧化鎵進行熱處理，其厚度會變得較薄，結構也變得較為緻密，並且擁有較佳之表面平整度，而當處理溫度愈高時變化愈明顯，接著進行金氧半場效電晶體元件製作並量測其特性，由量測漏電流及崩潰電場的結果顯示所製作為一高品質之氧化層，於元件的直流特性量測上，當施加於閘極的電壓為-3V時，量測到的輸出電流為零，此時整個場效電晶體已達到截止狀態(cut-off)，而在互導值量測上，當閘源極的電壓為0.2V時，可獲得最大的互導值2.25mS/mm。

論文摘要	I
目錄	II
表目	IV
圖目	V
第一章 緒論	1
1-1背景及研究動機	1
1-2研究目的	3
第二章 氮化鎵氧化原理及特性分析	6
2-1前言	6
2-2氮化鎵氧化之原理	9
2-3實驗架構	10
2-4氧化鎵特性分析	12
2-4-1氧化鎵成長速率	12
2-4-2氧化層組成與表面分析	13
2-4-3氧化鎵經熱處理後之特性	15
第三章 氮化鎵金氧半場效電晶體製作及特性分析	18
3-1前言	18
3-2金氧半場效電晶體元件基本原理	19
3-2-1 金氧半二極體原理	20
3-2-2 金氧半場效電晶體原理	21
3-3氮化鎵金氧半場效電晶體元件製作	23
3-3-1 n型氮化鎵歐姆接觸	23
3-3-2元件製作	25
3-4量測與實驗結果	30
3-4-1歐姆接觸長期穩定性量測	30
3-4-2二氧化矽薄膜特性量測	30
3-4-3元件電壓-電流特性量測	31
第四章 結論與未來展望	35
參考文獻	37

                                

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