砷化鎵場效電晶體表面氧離子佈植和自我校準技術之研究

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研究生：	薛光博 Kuang-Po Hsueh
論文名稱：	砷化鎵場效電晶體表面氧離子佈植和自我校準技術之研究 GaAs MESFET with Surface Oxygen Implantation and Self-Aligned Technology
指導教授：	辛裕明 Yue-Ming Hsin
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系 Department of Electrical Engineering
畢業學年度：	89
語文別：	中文
論文頁數：	94
中文關鍵詞：	離子佈植、自我校準技術、砷化鎵、金屬半導體場效電晶體
外文關鍵詞：	Implantation, Self-Aligned Technology, GaAs, MESFET
相關次數：	點閱：14 下載：0
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(1)元件表面氧離子佈植的研究：
利用離子佈植和活化條件的不同，建構了三種不同結構的場效電晶體：(1) SiBe結構；(2) OSiBe結構；(3) O/SiBe結構。在這三種結構中，利用表面氧離子佈植所形成的高電阻區來改善元件特性，如崩潰電壓、生命週期、電流之頻率效應等，其中以OSiBe結構的崩潰電壓最高。而在元件直流和高頻特性上，三種結構上並無明顯差異：轉移電導(GM)在115∼140mS/mm之間；ft的平均值在7∼9GHz之間，fmax的平均值在38∼40GHz之間，這些結果也由電晶體等效模擬所萃取出的參數值得到印證。
(2)自我校準技術的研究：
以SiBe結構為基礎，再加上離子佈植自我校準技術所建構出的電晶體。這結構主要是利用有邊牆(side walls)的閘極當光罩，來定義高濃度矽離子的佈植區域。由於有高濃度的矽離子在源極和汲極處，所以元件的歐姆接觸電阻較SiBe結構小，膝蓋電壓(knee voltage)降低到只有1.5V。這個結果也利用電晶體等效模擬所萃取出的參數值來得到印證。

論文摘要…………………………………………………………………1
目 錄…………………………………………………………………2
圖 目…………………………………………………………………6
表 目………..………………………………………………………9
第一章 緒論…………………………………………………………10
1-1 無線通訊系統………………………………………………………10
1-2 研究動機……………………………………………………………12
第二章 離子佈植金屬半導體場效電晶體…………………………16
2-1 離子佈植的技術和理論……………………………………………16
2-1.1 離子佈植機架構……………………………………………16
2-1.2 離子佈植分佈理論…………………………………………18
2-1.3 脫序和回火…………………………………………………21
2-2 砷化鎵場效電晶體原理和架構……………………………………22
2-2.1 砷化鎵場效電晶體工作原理………………………………22
2-2.2 離子佈植場效電晶體之一般架構…………………………24
第三章 表面氧離子佈植電晶體的結構設計………………………27
3-1 電晶體元件的結構設計……………………………………………27
3-2 離子佈植活化溫度的決定…………………………………………29
3-3 電晶體元件的製程…………………………………………………34
3-3.1 離子佈植和活化處理………………………………………35
3-3.2 高臺蝕刻……………………………………………………37
3-3.3 源極和汲極歐姆接觸之製作………………………………38
3-3.4 閘極掘入……………………………………………………40
3-3.5 閘極蕭基接觸………………………………………………40
3-3.6 鈍化層和介電洞……………………………………………41
3-3.7 金屬連線……………………………………………………41
第四章 表面氧離子佈植電晶體的直流特性之量測、分析和討論43
4-1 歐姆接觸電阻量測…………………………………………………43
4-2 閘極和汲極間的二極體特性………………………………………45
4-3 電流－電壓和轉移電導特性………………………………………48
4-4 頻率失真和存活時間………………………………………………53
4-4.1 頻率失真……………………………………………………53
4-4.2 存活時間……………………………………………………56
第五章 表面氧離子佈植電晶體的高頻特性之量測、分析和討論57
5-1 電流增益和功率增益………………………………………………57
5-2 等效模擬電路………………………………………………………60
第六章場效電晶體自我校準技術之研究……………………………66
6-1 電晶體元件結構設計和製程………………………………………66
6-1.1 元件的結構設計……………………………………………66
6-1.2 元件的製程…………………………………………………69
6-2 電晶體元件直流和高頻特性之量測、分析和討論………………75
6-2.1 直流特性……………………………………………………75
6-2.2 高頻特性……………………………………………………81
第七章結論…………………………………………………………85
參考文獻…………………………………………………………………88

                                

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