摘要
本論文主要研究方向大致上可分為：
(1) 比較四元氮化鋁銦鎵(AlInGaN)位障層與二元氮化鎵(GaN)位障層對紫外光發光二極體(UV-LED)發光機制之影響
(2) 比較不同濃度矽(Si)摻雜之四元氮化鋁銦鎵位障層對紫外光發光㆓極體(UV-LED)發光機制之影響。
量測方面，主要利用變溫電激光譜(EL).變溫光激光譜(PL) 等量測方法，藉由分析量測結果加以研究UV-LED發光機制之不同，首先當以四元氮化鋁銦鎵取代二元氮化鎵為UV-LED之位障層時，將可有效提高發光效率，主要是因為增加載子侷限(carrier-confinement)能力，以及改善量子井材料特色，減少缺陷產生。
至於，比較不同濃度矽(Si)摻雜之四元氮化鋁銦鎵位障層，發現適度矽摻雜將可有效提高發光效率，然而，過度矽摻雜將會導致發光效率減弱，其主要原因為適度矽摻雜將導致局部侷限能態(Localized-state)產生，增加載子侷限，避免載子被非輻射復合中心(Nonradiative-recombination center)所捕捉，相對地，將提高UV-LED發光效率。

Optical Properities of UV-LED with Si doped Quaternary Barriers

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