摘 要
無線通訊系統發展滿足了現代人行動通訊的需求，如行動電話、個人數位助理(PDA)、無線區域網路、及衛星通訊等。而系統中的高頻微波電路是位於收發端(RF section)，其中功率放大器控制了射頻收發模組大部份的尺寸、成本與效能，因此可以了解到功率放大器在此系統中扮演牽一髮而動全身的重要角色。
本論文主要就在研究製作整合性單石微波積體電路(monolithic microwave integrated circuit ; MMIC)及微波積體電路(microwave integrated circuit ; MIC)功率放大器，其中在單石微波積體電路功率放大器上，成功設計製作出適用於不同頻段無線通訊系統的功率放大器；另外在氧化鋁基板上微波積體電路功率放大器的研製上，成功的利用主動元件(InGaP/GaAs異質接面雙極性電晶體)、本實驗室被動元件(電感、電容、電阻)平面薄膜製程技術及打線技術，在氧化鋁基板上完成適用於無線通訊區域網路系統的兩級式功率放大器研製。最後利用本所高頻量測實驗室中的HP-8510C網路分析儀及負載–拉移(load-pull)量測系統，將所有微波積體化功率放大器作完整的S參數、功率增益、輸出功率、附加功率效益(PAE)、三階交互調變失真及鄰近通道干擾功率比值量測，並對結果探討分析。

Abstract
The developing of wireless communication system is satisfied by human moving service, such as cellular mobile telephone, PDA, wireless LAN, and satellite communication. Microwave circuits are used within RF section of wireless communication system. The power amplifier is controlled by the size, cost, and performance of the RF section, hence the power amplifier is very important in the wireless communication system.
This thesis is major to study MMIC (monolithic microwave integrated circuit) and MIC (microwave integrated circuit) power amplifier. In the MMIC power amplifier demonstrated, we successfully design the power amplifier that can be applied different frequency of the wireless communication system. The MIC power amplifier on Al2O3 substrate, we successfully combine active elements (InGaP/GaAs HBT), a clear-room thin-film process passive elements (inductor, capacitance, resistor), and wire bonding technology to fabricate the two-stage MIC power amplifier that can be used on wireless LAN communication system. We use network analyzer (HP-8510C) and load-pull system to measure all microwave power amplifiers in the RF laboratory. The measurements include S parameter, power gain, output power, PAE, IM3, and ACPR. And we analyze the results further.

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