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| 研究生： |
曾國偉 Kuo-Uei Tseng |
|---|---|
| 論文名稱： |
氮化銦鎵卅氮化鎵多層量子井發光二極體之電性研究 The electrical properties of InGaN/GaN MQWs LED |
| 指導教授： |
徐子民
Tu-Min Hsu |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
理學院 - 物理學系 Department of Physics |
| 畢業學年度： | 90 |
| 語文別： | 中文 |
| 論文頁數： | 61 |
| 中文關鍵詞： | 氮化銦鎵卅氮化鎵 、多層量子井 、電容電壓量測 |
| 外文關鍵詞： | MQW, C-V, InGaN/GaN |
| 相關次數： | 點閱：12 下載：0 |
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本篇論文主要是針對氮化銦鎵卅氮化鎵多層量子井發光二極體（In0.23Ga0.77N/GaN MQWs LED）的結構以電容電壓量測與導納量測探討其電性。
在本研究中，主要是利用電容電壓量測檢測多層量子井中的載子分佈情形。並分析在不同溫度與量測頻率的條件下，載子凍結與樣品所含的缺陷對於電容電壓量測之影響。另外，利用空乏近似法的計算來模擬電容電壓譜線，並探討在氮化銦鎵卅氮化鎵異質結構中所產生的壓電場效應，對於多層量子井的能帶結構與載子分佈所帶來的影響。
而由導納量測的結果發現，樣品中含有來自於n型摻雜的矽（Si）、p型摻雜的鎂（Mg）和一個可能與氮空缺（N-vacancy）有關的缺陷。
We use capacitance-voltage measurement and admittance spectroscopy to study the electrical properties of InGaN/GaN MQWs LED.
We use C-V measurement to study the carrier distribution of MQWs. And we analyze the influence of the carrier freeze-out and defect on the different temperature and frequency C-V measurement. Besides, we study the influence of piezoelectric field on the band profile and carrier distribution of MQWs by depletion approximation.
Then we found the n type dopant (Si), the p type dopant (Mg), and the defect N-vacancy related with admittance measurement.
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