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| 研究生： |
陳星宏 Hsing-Hung Chen |
|---|---|
| 論文名稱： |
氧硒化鋅薄膜之光學特性研究 Optical characteristics of ZnSeO thin film |
| 指導教授： |
徐子民
Tzu-Min Hsu |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
理學院 - 物理學系 Department of Physics |
| 畢業學年度： | 98 |
| 語文別： | 中文 |
| 論文頁數： | 50 |
| 中文關鍵詞： | 硒化鋅 、氧硒化鋅 |
| 外文關鍵詞： | ZnSe, ZnSeO |
| 相關次數： | 點閱：12 下載：0 |
| 分享至: |
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本篇論文利用光激發螢光光譜與光調製反射光譜來分析氧硒化
鋅(ZnSe1-xOx)薄膜樣品的光學特性，氧濃度比例為0≦x≦0.097。在
氧硒化鋅的室溫光激發螢光光譜中，我們觀察到樣品能隙隨氧濃度比
例的增加會劇烈的縮小，此結果可用能帶互斥理論解釋。在變溫光激
發螢光光譜實驗中，我們則觀察到樣品氧濃度比例為0＜x≦0.070 之
螢光訊號峰值隨溫度會產生S 型的變化，我們認為這是局域化激子轉
變為自由激子之過程。另外我們利用光調製反射光譜實驗獲得各樣品
能隙。我們利用能帶互斥理論分析光激發螢光光譜以及光調製反射光
譜所得到訊號隨溫度的變化。
In this thesis, we have studied the optical characteristics of ZnSe1-xOx thin film (0≦x≦0.097) by using Photoluminescence (PL)spectroscopy and Photoreflectance (PR) spectroscopy. We observe the band gap decreases dramatically with increasing oxygen concentration by PL at room temperature, which can be explained by the band anticrossing
model. We observe the S-shaped PL peaks (0＜x≦0.070) evolve with temperature, we have considered this phenomenon which transits from localized exciton to free exciton. We have used PR to obtain the band gap of these samples. We have used the band anticrossing model to analyze these signals from PL and PR.
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[2] W. Shan et al .,“Band Anticrossing in GaInNAs Alloys” ,Phys. Rev. Lett. 82, 1221 (1999).
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[6] Y. Nabetani et al ., “Epitaxial growth and large band-gap bowing of ZnSeO alloy” ,Appl. Phys. Lett. 83 1148 (2003)
[7] Y. Nabetani et al ., “Structure and optical properties of ZnSeO alloys with O composition up to 6.4%” ,Materials Science in Semiconductor Processing 6 ,343–346(2003)
[8] W. Shan et al ., “Effect of oxygen on the electronic band structure in ZnOxSe1-x alloys” ,Appl. Phys. Lett. 83 229 (2003)
[9] R. Broesler et al ., “ Temperature dependence of the band gap of ZnSe1−xOx” ,Appl. Phys. Lett. 95, 151907 (2009)
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[11] C.-Y. Chen et al ., “Optical properties of ZnSe1-xOx epilayers” ELECTRONICS LETTERS Vol. 45 No. 24 (2009)
