本研究利用掃描式電子穿隧顯微鏡( in situ scanning tunneling microscopy，in situ-STM )和循環伏安法( cyclic voltammetry，CV )探討兩個主題：利用不同的硫醇分子(MAA、MPA、MPS、MBIS)分別對於鍍鈷、鎳在鉑(111)及金(111)上的影響。第一個部分是利用添加或者是浸泡硫醇分子的方式在鉑(111)上後再加入0.01M的七水合硫酸鈷或六水合硫酸鎳溶液觀察硫醇分子對於鍍鈷及鎳的影響，利用CV得到不同分子的加速倍率及電位改變後再以STM觀察鉑(111)以及金(111)在不同分子下鍍鈷、鎳的表面結構變化，可觀察到在尚未添加及浸泡任何硫醇分子下鈷以及鎳在鉑(111)以及金(111)上的前幾層的UPD成長模式皆為平面薄膜狀的方式成長，再添加硫醇分子後成長模式則變成以三維方式成長，在金(111)浸泡MAA、MPA、MPS、MBIS下可明顯看到分子吸附於表面上的結構以及分子所造成的金島(Gold island)及金的缺陷(Defect)，在鉑(111)下雖無法明顯看見分子單純吸附於表面之結構，但仍可觀察到添加或浸泡硫醇分子後鍍鈷以及鍍鎳的UPD成長模式皆變成以三維的方式成長，推測其中原因是硫醇分子將原本的單晶表面粗糙度變大後使得表面積也一併變大而造成了其對於鍍鈷及鍍鎳的加速效果。

In situ scanning tunneling microscopy (STM) and cyclic voltammetry (CV) were used to examine the effects of four thiol molecules (MAA, MPA, MPS, MBIS) on the deposition of cobalt and nickel on Pt (111) and Au (111) electrodes in pH3 sulfate media. The first part is to study the effect of thiol molecules on cobalt deposit and nickel deposition on bare and thiol-modified Pt(111) electrode in 0.01M cobalt sulfate heptahydrate or nickel sulfate hexahydrate solution with and without thiol molecule in the pH3 sulfate electroltye. All thiol molecules show some degrees of accelerating on the depositon of Ni and Co. UPD of Co and Ni on bare Pt(111) and Au(111) proceed in layers yielding smooth films of Co and Ni. In the presence of thiol molecules, Co and Ni grew in three-dimensional on Pt(111) and Au(111). The Au(111) surface is apparently roughned with aboundant gold island and gold defect, if it is immersed in MAA, MPA, MPS, MBIS dosing solution. These thiol molecules can be adsorbed in ordered structure on Pt(111) before and after UPD of Co and Ni, but bulk deposition is obviously 3D. It is speculated that the thiol molecule could help the nucleation event of metal deposition and resultant rough metal deposit then facilitates subsequent deposition.

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