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研究生： 林育漢
Yu-Han Lin
論文名稱： 以鈷作為催化劑製作橫向準直性奈米碳管元件
Fabrication of laterally aligned carbon nanotubes using cobalt catalyst
指導教授： 丁志華
Jyh-Hua Ting
黃豐元
Fuang-Yuan Huang
口試委員:
學位類別： 碩士
Master
系所名稱： 工學院 - 機械工程學系
Department of Mechanical Engineering
畢業學年度： 98
語文別： 中文
論文頁數： 101
中文關鍵詞： 靜電場模擬 、準直性奈米碳管 、電場 、鈷薄膜 、化學氣相沉積法
外文關鍵詞： Electric field, Carbon nanotube aligned, Electrostatic simulation, Chemical vapor deposition, Cobalt thin film
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    • 本實驗使用熱化學氣相沉積法合成奈米碳管，以鈷薄膜作為催化劑，藉由改變成長碳管的溫度流量比例，壓力並探討各項因子對於碳管密度，石墨化程度以及結構的影響，並藉由此過程得到800 ℃壓力為760 torr時為最穩定之成長參數，並使用於製作元件之控制參數。
    本實驗利用靜電場模擬Si/Silicon dioxide/Bottom metal/Co/Top metal元件結構的上下電極的厚度，並發現當上電極厚度大於下電極很多時，催化劑附近的電場會向下，並根據這些結果，規劃出不同的疊層結構來做論證。
    根據實驗的結果，可以看出無論是改變疊層結構中上下電極的材料或厚度，都會對成長碳管或是製作元件都會造成很大的影響，在本實驗使用的基版當中 200 nm TaN/7 nm Co/150 nm Pd 是目前作為製作橫向奈米碳管元件較好的結構，並以此結構在成長步驟中加入電場效應成長碳管，發現電場對於碳管成長的方向性有些許的影響，也成功的跨接少數根的奈米碳管於通道兩側，但就結果而言，準直性以及電阻值都不甚理想，我們必需努力探討各項原因，以增加碳管的準直性和降低接觸電阻來改良元件之性能。

    We synthesis the multi-wall carbon nanotube(NWCNT) using cobalt catalyst by chemical vapor deposition method with H2 carrir gas and carbon source of CH4 and discuss the effect of CNT density and quality in different temperature, gas ratio and pressure in CNT growth process. From those experiment results the proper condition for CNT growth are 760 torr and 800 ℃.
    In order to discuss the electric field effect during the CNT growth and design the experiment of metal stack we use electrostatic simulation software to simulate the different thickness of top and bottom metal electrode. From simulation result we got the Horizontal or upward electric field vectors around the Co film were attained when the bottom metal electrode thickness is no less than top metal electrode thickness.
    According to the experiment result, we discover the significant effect when we use different stack structure to grow CNT (unpattened) and making device. From the substrate we used in this experiment, 200 nm TaN/7 nm Co/150 nm Pd is proper metal stack structure for producing lateral CNT devices. The effect of electric field on lateral CNT growth was observed. However, the improvement is required for the lateral alignment of CNTs and reduction of contact resistances between the CNTs and metal electrodes.

    中文摘要.............................................. i 英文摘要.............................................. ii 誌謝.................................................. iii 目錄.................................................. iv 圖目錄................................................ vi 第一章 緒論........................................... 1 1-1 前言.............................................. 1 1-2 文獻回顧.......................................... 2 1-3 研究動機與目的.................................... 12 第二章 奈米碳管的介紹................................. 13 2-1 奈米碳管的起源.................................... 13 2-2 奈米碳管的結構及電學性質.......................... 16 2-3 奈米碳管之合成技術................................ 20 2-4 奈米碳管之成長機制................................ 26 2-5 奈米碳管之特性與應用.............................. 28 第三章 實驗流程與方法................................. 32 3-1 實驗流程.......................................... 32 3-2 實驗設備.......................................... 34 3-2-1 製程設備........................................ 34 3-2-2 量測設備........................................ 38 3-3 基版製備.......................................... 40 3-3-1 未經圖形化製程基版(unpatterned substrate)....... 40 3-3-2 製作元件專用基版(patterned substrate)........... 42 3-3-3 元件設計與光罩.................................. 45 3-4 Thermal CVD 成長奈米碳管之步驟.....................49 3-5 電場施加方式.......................................51 3-6 靜電場模擬的尺寸定義與原理.........................52 3-7 奈米碳管品質的分析.................................55 第四章 結果與討論......................................57 4-1 模擬上下電極厚度對電場的影響.......................57 4-2 各項CVD參數對成長奈米碳管的影響....................60 4-2-1 溫度對成長奈米碳管的影響........................ 60 4-2-2 流量比例對成長奈米碳管的影響.................... 63 4-2-3 製程壓力對成長奈米碳管的影響.....................66 4-2-4 添加氨氣對成長奈米碳管的影響.....................71 4-3 元件製作與特性.................................... 75 4-3-1 催化劑下層金屬的材料與厚度對碳管生長的影響...... 75 4-3-2催化劑薄膜厚度對碳管生長的影響................... 80 4-3-3 不同上下電極厚度與材料製作CNT元件的比較......... 82 4-3-4 施加電場的對碳管生長的影響...................... 85 4-3-5 將上電極與催化劑往通道兩旁退縮對碳管生長的影響...87 4-3-6 奈米碳管元件電性量測.............................89 第五章 結論........................................... 93 參考文獻.............................................. 95

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