交流非晶質碳化矽氫薄膜發光二極體之研製｜國立中央大學博碩士論文系統

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研究生：	陳晉鴻 Ginn-Horng Chen
論文名稱：	交流非晶質碳化矽氫薄膜發光二極體之研製 Design and Fabrication of Alternating Current a-SiC:H Thin-Film Light-Emitting Diodes
指導教授：	洪志旺 Jyh-Wong Hong
口試委員:
學位類別：	碩士 Master
系所名稱：	資訊電機學院 - 電機工程學系 Department of Electrical Engineering
畢業學年度：	93
語文別：	中文
論文頁數：	67
中文關鍵詞：	發光二極體、交流、薄膜發光二極體
外文關鍵詞：	ITO treatment, Thin Film Light Emitting Diodes, Alternating Current
相關次數：	點閱：23 下載：0
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本研究的主要目的是研製交流非晶質薄膜發光二極體。在現階段，我們成功地運用一層很薄的本質非晶碳化矽氫做為發光層，且利用PECVD系統將ITO透明電極表面做氧電漿處理，提高ITO透明電極功函數並降低與本質非晶碳化矽氫之間的蕭特基位障。實驗結果顯示，適當的氧電漿處理確實能夠有效改善接觸電阻，大幅提升元件發光效率；若更進一步加以退火處理，使ITO透明電極再結晶而降低其片電阻值，則元件會有更佳的可靠度。同時我們也對元件做一系列電性量測，包括發光亮度、發光頻譜以及交流頻率響應等。量測結果顯示，不同大小的電壓及頻率幾乎不會改變發光波段，而且我們也發現當薄膜發光二極體操作在特定頻率範圍時，可有效提昇元件發光亮度。

The a-SiC:H thin-film light-emitting diodes (TFLED) which could be operated under the alternating current (AC) power supply have been designed and fabricated in this study. So far, the intrinsic a-SiC:H layer has been successfully used as the radiative layer and the effects of treating indium-tin-oxide (ITO) electrode surface with O2-plasma on the TFLED performance has been investigated. The O2-plasma treatment of ITO electrode resulted in an increase of its work function, and the brightness of a plasma-treated device has been significantly increased at the same injected current. In addition, it has been found that sheet resistance of the ITO films after annealing was decreased, and the reliability of device could be improved obviously. The frequency response of the obtained devices has been studied too. The peak wavelength of electroluminescence (EL) spectrum was almost independent of applied-voltage amplitude and frequency, and a higher EL intensity of the device was observed when the device was operated under a particular frequency range. The role of the AC frequency for the EL intensity was discussed also.

Table Captions...............................................................Ⅲ
Figure Captions..............................................................Ⅳ
Chapter 1  INTRODUTION........................................................1
Chapter 2  EXPERIMENTAL PROCEDURES............................................4
1 Preparations of Various Thin-Films........................................4
1.1 Deposition System.......................................................4
1.2 Film Depositions........................................................4
2 Device Synopsis...........................................................9
3 Device Fabrication.......................................................13
4 Measurement Techniques...................................................15
4.1 Optical Bandgap of Amorphous film......................................15
4.2 EL Intensity and Brightness............................................16
4.3 EL Spectrum and Frequency Response.....................................16
4.4 Brightness Under Alternating Current Operation.........................16
4.5 Electrical Circuit of Output Buffer....................................17
Chapter 3  RESULTS AND DISCUSSIONS...........................................23
1 Effects of O2-Plasma and Heat Treatments on ITO..........................23
1.1 Treating ITO with O2-plasmas having different RF power densities.......24
1.2 Treating ITO with O2-plasmas having different process durations........28
1.3 Post-plasma-treatment annealing........................................28
2 Current-Conduction Mechanism of the AC TFLED..........................31
2.1 Ideality Factor........................................................31
2.2 Low Electric-Field Region..............................................37
2.3 High Electric-Field Region.............................................39
3 B-J Characteristics......................................................39
4 EL Spectra...............................................................43
5 AC-Mode Measurement for Frequency Response...............................46
Chapter 4  CONCLUSION........................................................58
REFERENCES...................................................................60
APPENDIX Ⅰ..................................................................65

                                

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