本論文之研究主題在探討磊晶緩衝層對於在Si(111)基板上成長氮化銦薄膜之影響。在此實驗中，所有的磊晶層都是以自製常壓式化學氣相沉積的方法來成長。在成長氮化銦薄膜中，氮化矽的形成往往會導致品質不好的氮化銦薄膜，為了避免形成氮化矽，我們利用緩衝層先沉積在矽基板上，並且探討哪一種緩衝層能有效的提升氮化銦磊晶層的品質。
由x-ray繞射結果發現，使用氮化鋁緩衝層或氮化銦鎵/氮化鋁緩衝層，均能有效的提升氮化銦的磊晶品質，其氮化銦磊晶層的x-ray繞射峰形半高寬分別達到754arcsec和724arcsec。由InN(002)訊號強度和InN(101) 訊號強度的比值分別達到70和140，可以看出使用氮化鋁和氮化銦鎵/氮化鋁緩衝層成長氮化銦，在c軸上有好的優選方向(preferred orientation)。使用不同的緩衝層(AlN、InGaN/AlN、In predeposition、In predeposition/SiC)成長氮化銦薄膜，利用掃描式電子顯微鏡和原子力顯微鏡來觀察表面的均勻程度和表面型貌，發現使用不同的緩衝層成長氮化銦薄膜是由大小不同的氮化銦顆粒(grain)所組成。以使用In predeposition/SiC緩衝層成長之氮化銦顆粒最大；使用AlN緩衝層成長之氮化銦薄膜最小，此現象可利用緩衝層材料的潤濕效果做解釋，其中AlN緩衝層在矽基板上有好的潤濕性質(wetting properties)，與矽基板之間的接觸角較小，並且提供了均勻的成核層；相對的In緩衝層由於自聚性強，潤濕效果沒有AlN緩衝層好，與矽基板之間的接觸角較大，不能提供ㄧ個均勻的成核層。換言之，不同緩衝層有不ㄧ樣的表面張力，所提供給氮化銦薄膜的成核層有不ㄧ樣的均勻度跟晶格不匹配度，因此造成了不同的緩衝層所成長氮化銦薄膜在表面型態上的差異。
最後利用光激發螢光光譜觀察到以AlN緩衝層與InGaN/AlN緩衝層成長氮化銦薄膜的峰值分別位於0.73與0.77eV附近，由於兩種樣品在X光繞射實驗中InN(002)與 InN(101)其繞射峰位置並無差異，也就是沒有相對的應變(strain)；而且也沒有發現到In2O3的訊號，也沒有其他可能的雜質的訊號。因此兩者在PL光譜峰值的差異，並無法以應變與雜質來解釋，可能的原因可以是因為樣品(InGaN/AlN緩衝層)本身具有很高的載子濃度，而造成在室溫下傳導帶已經有一些電子填入，所以電子要從傳導帶躍遷至價帶時會有更高的能量，才可以躍遷造成觀察到之PL峰值藍移，此現象可以以Burstein-Moss effect解釋。此外，In predeposition、In predeposition/SiC兩個樣品在相同實驗條件下，無法觀察到PL訊號，可能的原因是兩個樣品之X光繞射的訊號強度比前兩個樣品(AlN、InGaN/AlN)小了一個數量級。

In this study, we use hetero-epitaxiy method to growth different buffer layer for InN thin film on Si(111) substrate and discuss the characteristics of InN thin film. In this study, we use home-made atmospheric pressure chemical vapor deposition system to growth samples. In the growth of InN thin film, the formation of SiN thin film always decrease the quality of InN thin film. So, we use different buffer layer to prevent this problem.
According to x-ray diffraction experiments, we found that if we use AlN or InGaN/AlN buffer layer could increase the quality of InN thin film. The FWHM are 754arcsec and 724arcsec, respectively. The intensity ratio of InN(002) and InN(101) are 70 and 140, we can know the InN thin film has preferred orientation on c axis with AlN or InGaN/AlN buffer layer.
According to AFM and SEM, we can know the grain size of InN thin film with different buffer layer. We use the wetting ability of different buffer layer to discuss this problem. AlN has good wetting properties, the contact angle between AlN buffer layer and Si(111) is smaller than the In buffer layer, good wetting properties also can provid a uniform nucleation layer to InN thin film.
In PL, we found the peaks of PL spectrum of sample 1 and sample 2 are 0.73 and 0.77eV , the blue shift is due to the different carrier concentration of InN thin film, we call it Burstein-Moss effect.

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