本論文研究方向是著重於發展標準金氧半導體製程設計微波與毫米波段之寬頻與低損
耗平衡不平衡轉換器及其在頻率轉換器之應用。在本論文中，利用對稱與非對稱架構技巧
設計了三種多層式平衡不平衡轉換器，此改良多層式非對稱平衡不平衡轉換器可用耦合線
之等效參數與其對應之阻抗值完成初步的合成設計，並可快速的建構一高特性馬遜平衡不
平衡轉換器。所提出的解析步驟與設計方法可借由理論分析與實作電路做相互驗證並應用
於平衡不平衡轉換器。此架構有別於一般傳統平面及螺旋堆疊耦合方式，本論文所發展之
曲折堆疊耦合馬遜平衡不平衡轉換器更具有寬頻及低介入損耗等特性。
所提出之平衡不平衡轉換器晶片面積均小於 0.06 平方毫米。其中非對稱式平衡不平
衡轉換器可達到 120 % 頻寬，在 16.5 到 67 GHz 的頻段中，其介入損耗維持在 7 dB 以
內。我們也利用三個不同的平衡不平衡轉換器應用於五個頻率轉換器，皆使用商用 0.18 微
米金氧半導體製程實現。兩個寬頻的被動式單平衡混頻器達成 14.5 dB和 15 dB以下的轉
換損耗，在 16 到 46 GHz 和 15 到 60 GHz 的頻段中，晶片面積均小於 0.24 平方毫
米。利用一個縮小率為 80 %的微小化平衡不平衡轉換器達成 17 GHz 被動式單平衡式混
頻器，達成 6.8 dB以下的轉換損耗，晶片面積小於 0.24 平方毫米。被動式雙平衡混頻器
與倍頻器可達成 15 dB和 15.5 dB以下的轉換損耗，在 25 到 56 GHz 和 25 到 75 GHz
的頻段中，晶片面積小於 0.34 與 0.2 平方毫米。另外，一個寬頻的主動式單端混頻器達
成 0 dB以上的轉換增益，只需要 20 mW 以內的直流功率，在 7 到 65 GHz 的頻段中。
一個本地振盪倍頻器達成 28 GHz 被動式單端混頻器，達成 11 dB以下的轉換損耗。

The purpose of this dissertation is to develop broadband and low-loss Marchand baluns in
microwave and millimeter-wave frequencies and their applications in standard CMOS-based
technology. Three multilayer baluns using symmetric and asymmetric techniques are
demonstrated in this dissertation. The equivalent parameters of the coupled-line and their
impedance levels are used to synthesis the modified asymmetric broadside coupled balun design
up to 65 GHz. The design procedure for the balun is verified by practical implementation. The
measured results are well agreed with the theoretical analysis. Compare with the conventional
planar and spiral stack Marchand baluns; the proposed meandering multilayer coupled Marchand
balun demonstrates the better bandwidth and insertion loss performance.
These balun chip sizes are all in 0.06 mm2. An asymmetric balun achieves a bandwidth of
120 % with an insertion loss of 7 dB from 16.5 to 67 GHz. Five frequency-conversion circuits
are further proposed and implemented in commercial TSMC 0.18-μm CMOS processes. These
mixers and doubler adopting a non uniplanar balun feature a wide bandwidth performance with
very compact size. Two broadband passive single-balanced mixers present a conversion loss
better than 14.5 and 15 dB from 16 to 46 GHz and 15 to 60 GHz, the chip sizes are in 0.24 mm2.
A 17 GHz passive single-balanced mixer with a miniaturized balun to reduce the chip area by 80
% and yields a conversion loss of better than 6.8 dB with a chip size of 0.24 mm2. Two passive
double-balanced mixer and frequency doubler perform a conversion loss better than 15 and 15.5
dB from 25 to 56 GHz and 25 to 75 GHz, the chip sizes are 0.34 and 0.24 mm2, respectively.
Furthermore, a wideband active single-ended mixer demonstrates a conversion gain better than 0
dB under a dc power dissipation of 20 mW from 7 to 65 GHz. The chip size is 0.15 mm2. A
8
passive 28 GHz drain-pumped passive mixer with an LO frequency doubler in sub-harmonic
operation and achieves the conversion loss of better than 11 dB.

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