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研究生： Gea Oktavianus
Oktavianus Gea
論文名稱： Studies of Tunneling Event on the Single-Electron Box
指導教授： Yung-Fu Chen
口試委員:
學位類別： 碩士
Master
系所名稱： 理學院 - 物理學系
Department of Physics
論文出版年： 2019
畢業學年度： 108
語文別： 英文
論文頁數： 57
中文關鍵詞： 單電子盒 、單電子晶體管 、角度陰影製程法 、SET電荷組態 、隧穿事件
外文關鍵詞： single-electron box, single-electron transistor, two fabrication processes, charge configuration of set, tunneling event
相關次數： 點閱：9  下載：0 
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    • 我在這個實驗中的目標是在單電子盒（SEB）上進行電子隧穿事件(tunneling event)。 SEB由兩層鋁和一個絕緣屏層組成。當施加閘極電壓時，每個單電子都會隧穿SEB的能量障礙(barrier)。將SEB的閘極電壓施加到島周圍以操縱電荷配置。它必須在低溫下工作。
    SEB中的電子隧穿事件由單電子晶體管（SET）進行測量。在測量結果中，我相信電子隧穿事件是經由過SEB接面(junction)的能量障礙發生的。我看到許多與SEB接面上的電子隧穿事件有關的信號。由於時間限制，我僅測量SEB上罕見的電子隧穿事件。根據研究，無法將實驗作完善是因為SEB的電阻在大氣壓下隨時間而變高。另一個原因是電子隧穿速度更快，這也為本次實驗困難之處: 不穩定的製程以及來自儀器所線之採樣速度不夠。

    My goal in this experiment is electron tunneling event on the single-electron box (SEB). The SEB consists of two layers of aluminum and an insulating barrier. Every single-electron will tunnel through the barrier of the SEB when the gate voltage is applied. The gate voltage of the box is applied to around the island to manipulate charge configuration. It works at low-temperature.
    The electron tunneling event in the SEB is inspected by a single-electron transistor (SET). In the measurement result, I believe that the electrons tunneling event occurs through the barrier of SEB junction. I see many signals related to the electron tunneling event on the SEB junction. Because of time-limited, I only measure electrons tunneling event that is rare on the SEB. According to studies, it happened because the resistance on the SEB becomes higher along time at under atmospheric pressure. Another reason is electrons tunneling is faster.

    摘要 ....................................................................................................................................... i ABSTRACT ......................................................................................................................... ii ACKNOWLEDGEMENTS ................................................................................................ iii TABLE OF CONTENT ....................................................................................................... v LIST OF FIGURES ........................................................................................................... vii ACRONYMS ........................................................................................................................ x EXPLANATION OF SYMBOLS ....................................................................................... xi INTRODUCTION ......................................................................................... 1 1.1 Introduction of Single-Electron Devices ................................................................. 1 1.2 Two Oxidation Processes for the SET and the SEB respectively .......................... 2 THEORY ....................................................................................................... 4 2.1 Charging Energy ..................................................................................................... 4 2.2 Single-Electron Box ................................................................................................. 4 2.3 Single-Electron Transistor ...................................................................................... 8 2.4 Tunneling Rate ...................................................................................................... 14 2.5 Quasiparticles in BCS Superconductors .............................................................. 15 EXPERIMENTAL METHODS .................................................................. 17 3.1 Sample Preparation ............................................................................................... 17 3.2 Fabrication Methods ............................................................................................. 18 vi 3.2.1 Resist Spinning ............................................................................................ 18 3.2.2 Baking .......................................................................................................... 20 3.2.3 Electron-Beam Lithography........................................................................ 20 3.2.4 Development ................................................................................................ 20 3.2.5 Electron-Beam Evaporation ........................................................................ 20 3.2.6 Oxidation and Angle Evaporation .............................................................. 21 3.2.7 Lift-Off ......................................................................................................... 22 3.2.8 Sample Holder ............................................................................................. 22 3.2.9 Silicon Chip and Scale ................................................................................. 23 3.3 Measurement Setup ............................................................................................... 23 RESULT OF EXPERIMENT ..................................................................... 26 4.1 Analysis of the SET Current ................................................................................. 26 4.2 Identification of Various Tunneling Processes ..................................................... 30 4.3 Determination the Tunneling Event on the SEB .................................................. 32 4.4 Comparing Electron Tunneling Event on The SEB junction with Scanning 𝑽𝒈,𝒃𝒐𝒙 and Stepping 𝑽𝒈,𝒔𝒆𝒕 .................................................................................... 34 4.4.1 The First Measurement by Scanning 𝑽𝒈,𝒃𝒐𝒙 and Stepping 𝑽𝒈,𝒔𝒆𝒕 ....... 34 4.4.2 The Second Measurement by Scanning 𝑽𝒈,𝒃𝒐𝒙 and Stepping 𝑽𝒈,𝒔𝒆𝒕 ... 36 CONCLUSIONS ......................................................................................... 39 5.1 Conclusions ............................................................................................................ 39 REFERENCES .................................................................................................................. 40

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