跳到主要內容

簡易檢索 / 詳目顯示

研究生: 呂啟銘
Qi-Ming Lu
論文名稱: 10Gb/s 光纖通訊系統接收端電路模擬實作與量測
The Simulation & Implementation & Measurement Of 10Gb/s Optoelectronic Receiver Circuit
指導教授: 詹益仁
Y.J. Chan
口試委員:
學位類別: 碩士
Master
系所名稱: 資訊電機學院 - 電機工程學系
Department of Electrical Engineering
畢業學年度: 93
語文別: 中文
論文頁數: 69
中文關鍵詞: 轉阻放大器限制放大器解多工器
外文關鍵詞: transimpedance amplifier, limiting amplifier, demultiplexer
相關次數: 點閱:9下載:0
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  • 近年來由於通訊與網路等科技不斷的進步,使得通訊與網路等相關產品,已成為人類世界不可或缺的一部分。而在其所應用的技術中,光纖通訊的技術常扮演將訊號有效的發射與接收,並提供高資訊量的傳輸通道,因此光纖通訊電路的設計與製作是很重要的,而本論文則是針對10Gb/s光纖通訊系統接收端電路做進一步的研究與探討。
    在論文中是以Ⅲ-Ⅴ族製程的砷化鎵異質接面電晶體HBT來設計相關的電路;利用HBT其高頻率、高速度、高驅動力等優點,設計如光接收端電路如轉阻放大器(TIA)、可調增益限制放大器(AGC-LA)、解多工器(DeMux)等,完成接收端電路10Gb/s傳輸率的模擬與製作。


    In recent years, as a result of the advancement of communication & networks constantly, it makes the relative products of communication & networks become the essential parts of the world. In the technology of the application, the technology of the fiber communication often makes a rule of the effective emitting & receiving of the signal and supplies the channel of the transmission of the high data rate. Therefore, it is very important to design and make the circuit of the fiber communication. The purpose of this paper is to research and discuss the 10Gb/s receiver circuit of the fiber communication more increasingly.
    The relative circuits of the fiber communication in this paper are designed and realized by the GaAs HBT transistor made by Ⅲ-Ⅴclan semiconductor. And bring up the flow path of the designed and measured way. Utilize the advantages of high FT, high speed, high thrust to design the optoelectronic receiver circuits, such as the transimpedance amplifier, the auto-gain control limiting amplifier, the demultiplexer and finish the simulation and implementation of the 10Gb/s optoelectronic receiver circuits.

    第一章 導論……………………………………...……. 1 1.1 研究背景………………………………………….. .1 1.2 研究動機……………………...……...……..……... 3 1.3 章節概述……………………...……...……..……... 3 第二章 光接收端系統概述…..……………………….. 4 2.1 光檢測器(Photo-detector)..………………....……... 4 2.1.1 PN接面光二極體…………………………….. ….5 2.1.2 PIN型光二極體………………………………..….5 2.1.3 累增型光二極體………………………………….6 2.2 前端放大器(Preamplifier)…………………………..7 2.3 後端放大器(Post Amplifier)..………………… …...8 第三章 轉阻放大器設計………………………………10 3.1 轉阻放大器原理……….……………….….………10 3.2 轉阻放大器模擬與量測結果……………………...13 第四章 可調增益限制放大器設計.….....…..…..……..19 4.1 限制放大器原理…………………………………...19 4.2 限制放大器模擬與量測結果……………………...21 第五章 時序電路原理與實作.……………….….…….31 5.1 解多工器………………..………………………….31 5.2 解多工器設計與量測結果………………………...34 第六章 系統整合………….…..……………………….44 6.1 光接收端電路設計與量測結果…………………...44 6.2 光二極體與轉阻放大器…….………………..........50 6.3 光二極體與轉阻放大器與限制放大器.….……….53 第七章 結論……………………………………………55 參考文獻 ………………………………………………57

    Book:
    [1]黃凡修, “10Gb/s 光纖通訊系統傳送/接收電路模擬與實作,” 國立中央大學電機工程研究所碩士論文, 2003
    [2]林愷, “光纖通訊系統,”全華科技圖書股份有限公司
    [3]Behzad Razavi, “Design of Integrated Circuits for Optical
    Communication“, McGRAW Hill, 2003
    [4]Carlos Roberto Calvo, “A 2.5 GHz Optoelectronic Amplifier in 0.18 μm CMOS“,Worcester Polytechnic Institute in partial fulfillment of the requirements for the Degree of Master of Science in Electrical Engineering,2003
    Transimpedance Amplifier
    [5]Rui Tao,Manfred Berroth “A 10 Gb/s Fully Differential CMOS Transimpedance Preamplifier”,IEEE 2003
    [6]Norman Scheinberg, Robert J. Bayruns, Timothy M. Laverick, “Monolithic GaAs Transimpedance Amplifiers for Fiber-Optic Receivers”, IEEE JSSC, vol.26 NO.12, pp.1834~1839, Dec. 1991
    [7]M. Kossel, C. Menolfi, T Morf, M. Schmatz and T. Toift,“Wideband CMOS transimpedance amplifier”, ELECTRONICS LETTERS Vol. 39 No. 7 3rd April
    [8]Alexander Schild, Hans Martin Rein, Jens Müllrich, Lars Altenhain, Jürgen Blank and Karl SchrÖdinger, “High Gain SiGe Transimpedance Amplifier Array for a 12?10Gb/s Parallel Optical Fiber Link”, IEEE JSSC, vol.38 NO.1, pp.4~12, Jan. 2003
    [9]Samadi B, M.R.; Karsilayan, A.I.; Silva-Martinez, J., “Design of transimpedance and limiting amplifiers for 10 Gb/s optical communication systems”,IEEE ,Volume: 3 ,4-7 Aug. 2002
    [10]Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, and Yuu Watanabe, “A 49-GHz Preamplifier With a Transimpedance Gain of 52 dB Using InP HEMTs”, IEEE JSSC, vol.36 NO.9, pp.1309~1313, Sep.2001
    Limiting Amplifier
    [11]Wolfgang PÖhlmann, “A Silicon Bipolar Amplifier for 10Gb/s with 45dB Gain”, IEEE JSSC, vol.29 NO.5, pp.551~556, May 1994
    [12]L.C.N.de Vreede, A. C. Dambrine,J.L.Tauritz,and R.G.F. Baets, “A
    high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz”,IEEE Transactions on,Volume:42, Issue:4 , April 1994
    [13]G. Georgiou, P. Paschke, R. Kopf, R. Hamm, R. Ryan, A. Tate, J. Burn, C. Schulien and Y. K. Chen, “High Gain Limiting Amplifier for 10Gbps Lightwave Receivers”, 11th International Conference on Indium Phosphide and Related Materials, pp.71~74, May 1999
    [14]Rui Tao,Manfred Berroth “10 Gb/s CMOS Limiting Amplifier for Optical Links”,IEEE 2003
    [15]Yuriy M. Greshishchev, Peter Schvan, “A 60dB Gain, 55dB Dynamic Range, 10Gb/s Broad-Band SiGe HBT Limiting Amplifier”, IEEE JSSC, vol.34 NO.12, pp.1914~1920, Dec. 1999
    [16]Taizou Kinoshita, Kiichi Yamashita, Minoru Maeda; “A DC-Coupled Wide Dynamic Range AGC Amplifier IC for 560-Mbit/s Optical Transmission”IEEE Journal of LIGHTWAVE TECHNOLOGY, VOL. LT-5, NO. 8,AUGUST 1987
    DeMUX
    [17]Zhihao Lao, Jens N. Albers, Ulrich Langmann and Erwin Schlag, “A 20Gb/s Silicon Bipolar 1:4-Demultiplexer IC”, Journal of Lightwave Technology, vol.12 NO.2, pp.320~324, Feb. 1994
    [18]Alfred Felder, Michael MÖller, Josef Popp, Josef BÖck and Hans Martin Rein, “46Gb/s DEMUX, 50Gb/s MUX, and 30GHz Static Frequency Divider in Silicon Bipolar Technology”, IEEE JSSC, vol.31 NO.4, Apr. 1996
    [19]Kenji Ishida, Hirotsugu Wakimoto, Kunio Yoshihara, Mitsuo Konno,Shoichi Shimizu, Yoshiaki Kitaura, Kenichi Tomita, Takashi Suzuki and Naotaka Uchitomi, “A 10Ghz 8-b Multiplexer/Demultiplexer Chip Set for the SONET STS-192 System”, IEEE JSSC, vol.26 NO.12, pp.1936~1943, Dec. 1991

    QR CODE
    :::