本論文針對PIN光二極體和異質接面雙極性電晶體作整合，完成一積體化的光接收器，應用的光波長為1.55 um。
為了在同一晶片上同時完成PIN光二極體和異質接面雙極性電晶體二種元件的製作，磊晶結構的選擇就顯得特別重要。本論文中乃是採用由OEPIC公司以分子束磊晶方式成長的磷化銦/砷化銦鎵單一異質接面雙極性電晶體晶片。為了同時顧及PIN光二極體和異質接面雙極性電晶體二種元件的特性表現，採用集極厚度為5000 Å。
製作完成的異質接面雙極性電晶體射極面積為3x12 μm2的非自動對準小元件截止頻率fT為70.5 GHz。射極面積為3x6 μm2的自動對準小元件截止頻率fT為80.5 GHz。射極面積為3x3 μm2自動對準小元件截止頻率fT為81.5 GHz。量測由射極面積為3x12 μm2非自動對準小元件所組成的轉阻放大器，其中一級轉阻放大器所得到的ZT，其3 dB頻寬為11.156 GHz，而三級轉阻放大器所得到的ZT，其3 dB頻寬為7.05 GHz。
製作完成的PIN光二極體，其照光面積為22x22 μm2，在光波長為1.55 μm的照光下，可以得到操作頻率10 Gb/s的眼圖並符合SONET OC-192規格。
由異質接面雙極性電晶體射極面積為3x6 μm2自動對準元件所組成的一級轉阻放大器外接頻寬為65 GHz光檢器時，可以得到操作頻率10 Gb/s的眼圖，並符合SONET OC-192的規格。驗証了未來PIN光二極體結合一級轉阻放大器時其頻寬可達10Gb/s的可能性。
由異質接面雙極性電晶體射極面積為3x12 μm2的非自動對準和自動對準元件所組成之二級轉阻放大器積體化光接收器皆可以得到操作頻率2.5 Gb/s的眼圖，並符合SONET OC-48的規格。射極面積為3x12 μm2的非自動對準元件所組成之三級轉阻放大器積體化光接收器亦可以得到操作頻率在2.5 Gb/s的眼圖。因此在本論文中成功地完成了符合SONET OC-48規格的積體化光接收器製作。

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