電遷移效應對Sn5Ag/Cu界面反應的影響｜國立中央大學博碩士論文系統

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研究生：	葉昱廷 Yu-ting Yeh
論文名稱：	電遷移效應對Sn5Ag/Cu界面反應的影響 Current density effect on the interfacial reaction between Sn5Ag/Cu
指導教授：	劉正毓 Cheng-Yi Liu
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 化學工程與材料工程學系 Department of Chemical & Materials Engineering
畢業學年度：	96
語文別：	中文
論文頁數：	64
中文關鍵詞：	電遷移、電流密度、無鉛銲料、界面反應、錫銀銲料
外文關鍵詞：	Sn-Ag solder, Electromigration, Current density, lead-free solder, interfacial reaction
相關次數：	點閱：12 下載：0
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於130℃下熱處理，Sn5Ag銲料和銅箔間的界面反應，探討其界面化合物的生成和銅箔消耗的情形，並計算出在130℃下的擴散係數 D=1.48×10-13 (cm2/s) 。另外探討在不同電流密度之下，Sn/Cu和Sn5Ag/Cu界面反應，並利用通量來解釋銅箔消耗及化合物生長的情形。陰極端銅箔的消耗是由於電遷移效應下使得銲料中的銅原子快速被遷移至陽極端。而單純熱處理反應下，由銅箔往錫銅化合物的銅溶解通量會比銅在錫銅化合物中的擴散通量快，因此後者為速率決定步驟。
實驗結果發現，銅箔消耗情形，Sn5Ag/Cu會比Sn/Cu來的緩和，這是因為Sn5Ag/Cu在界面處會生成錫銀及錫銅混合的化合物層，有效的阻擋從化合物層到銲料中的銅溶解，同時也降低從銅箔到化合物層的溶解。而在Sn5Ag/Cu和Sn/Cu通電下的反應皆可發現，銅箔的消耗和化合物的生成都隨著電流密度的增加而增加。

Under 130℃ heat treatment, we concern about the interfacial reaction between Sn5Ag solder and investigate the Cu consumption behavior and the formation of intermetallic compound. We obtain that , the diffusion coefficient under 130℃ is about D=1.48×10-13 (cm2/s). Further, we investigate the interfacial reaction between Sn solder and Cu and also Sn5Ag solder and Cu under different current densities. And explain the Cu consumption behavior and the formation of intermetallic compound by flux. Cu consumption at cathode side is due to Cu atom transported to anode side immediately under current stressing. Under thermal treatment, Cu dissolution flux from Cu to IMC is faster than the diffusion flux in IMC layer. So, the latter one is rate determine step.
From experiment results, the Cu consumption of Sn/Cu is much serious than Sn5Ag/Cu, this is because mixed Ag-Sn and Cu-Sn compound layer which formed at the interface can retard the Cu dissolution from IMC layer to solder matrix and also from Cu foil to IMC layer effectively. For Sn5Ag/Cu and Sn/Cu reaction under current stressing, we found that, both Cu consumption and IMC formation increase over time.

中文摘要...................................................Ⅰ
英文摘要...................................................Ⅱ
誌謝.......................................................Ⅲ
目錄.......................................................Ⅵ
圖目錄.....................................................Ⅶ
表目錄.....................................................Ⅹ
第壹章、 緒論..............................................1
1-1  研究背景............................................1
1-2  覆晶封裝技術........................................3
1-3  無鉛銲料的興起......................................7
第貳章、	文獻回顧............................................8
2-1  電遷移原理...........................................8
2-2  合金銲料之電遷移效應................................11
2-3  電遷移之失效模式....................................14
2-4  原子擴散機制.......................................18
2-5	Kirkendall voids之形成...............................20
2-6  銲料中添加銀的影響.................................21
第參章、 實驗方法...........................................22
3-1  試片的製備................. ........................22
3-2  SEM截面分析.................... ....................25
3-3  背向式電子顯微鏡(BSE)觀察..... .....................26
3-4  場發射電子微探儀(EPMA) ............................26
第肆章、結果與討論..........................................27
4-1  Sn5Ag銲料與銅箔經熱處理的界面反應行為...............27
4-1-1 介金屬化合物生成情形.............................27
4-1-2 界面化合物成長機制...............................31
4-1-3 界面IMC生長動力學................................32
4-2  Sn銲料和銅箔在電遷移下的界面反應....................34
4-2-1 電遷移效應下銅箔消耗和化合物生長情形.............34
4-2-2 錫銅在電遷移效應下反應機制.......................37
4-3  Sn5Ag銲料和銅箔在電遷移下的界面反應.................43
4-3-1 Sn5Ag/Cu在電遷移效應下反應機制...................43
4-3-2 Sn5Ag/Cu電遷移效應下銅箔消耗和化合物生長情形.....44
第伍章、結論.................................................49
5-1  Sn5Ag銲料與銅箔經熱處理的界面反應...................49
5-2  Sn銲料和銅箔在電遷移下的界面反應....................49
5-3  Sn5Ag銲料和銅箔在電遷移下的界面反應................49
參考文獻....................................................50
附錄A -ESCA在導線架銅表面的運用..........................52

                                

1. Edelstein D, Heidenriech J, Goldblatt R, Cote W, Uzoh C,et al. IEEE Int Electron Dev. Meet,pp. 773(1997)
2. P. J. Clarke, A. K. Ray, and C. A. Hogarth, International Journal of Electronics, 69, pp. 333-338, (1990)
3. J. Tao, N. W. Cheung, and C. Hu, IEEE Electron Device Letters, 14. Pp. 554-556, (1993)
4. M. Sekiguchi, K. Sawada, M. Fukumoto, and T. Kouzaki, Journal of Vacuum Science & Technology B, 12, pp. 2992-2996, (1994)
5. L. Arnaud, G. Tartavel, T. Berger, D. Mariolle, Y. Gobil, and I. Touet, Microelectron. Reliab. 40, pp.77 (2000)
6. T. Kwok, Mater. Chem. and Phys., 33, pp. 176-188 (1993)
7. C-K. Hu, K. Y. Lee, L. Gignac, and R. Carruthers, Thin Solid Films 308-309, 443 (1997)
8. Blech IA, Sello H. Phys Failures Elect, 5, pp.496 (1967)
9. J. H. Lau, Flip Chip Technologies, McGraw-Hill, New York, Chapter 1、3、6、15(1996)
10. J. H. Lau, Chip on Board Technologies for Multichip Modules, Van Nostrand Reinhold, An Interational Thomson Publishing Company, New York, Chapter5(1994)
11. 潘金平，基板型半導體構裝市場及技術趨勢，工業材料151期，p78-85(1999)
12. 呂宗興，電子構裝技術的發展歷程，工業材料115期，p.49(1996)
13. L. H. Su, Y. W. Yen, C. C. Lin, and S. W. Chen, Metal. Mater. Trans. B, 28,pp. 927-934 (1997)
14. M. Abtew, and G. Selvdury, Mater. Science and Engineering, 27 pp.95-141 (2000)
15. K. N. Tu, Phys. Rev. B 45, 1409 (1992)
16. C. K. Hu and H. B. Huntington, Physical Review B, 26, pp. 2782-2789, (1982)
17. M. Ohring, Reliability and Failure of Electronic materials and Devices, Academic Press Limited, Chapter8,(1998)
18. Ames I, d’ Heurle FM, Horstmann RE. IBM J Res Develop pp.14~41
19. S. Brandenbery and S. Yeh, in Proceedings of the surface Mount International Conference and Exposition, SMI 98, San Jose, CA August pp. 337-344 (1998)
20. C. Y. Liu, C. Chen, C. N. Liao, and K. N. Tu, Appl. Phys. Lett. 75, pp. 58 (1999)
21. Y. H. Lin, Y. C. Hu, Johnson Tsai, and C. Robert Kao, Int’l Symposium on electronic Materials and Packaging pp.253-258(2002)
22. C. Zener, J. Appl. Phys., 22, p.372, 1951
23. M. Li, F. Zhang, W.T. Chen, K. N. Tu, Zeng, H, Balkan and P. Elenius, J. Mater. Res,17 (7), 1612 (2000)
24. J. Shen, Y. C. Liu, H. X. Gao, C. Wei, and Y. Q. Yang, Journal of Electronic Materials, Vol. 34, No. 12 (2005)
25. X. Deng, G. Piotrowski, J. J. Williams, and N. Chawla, Journal of Electronic Materials, Vol. 32, No. 12 (2003)
26. Brook Chao, Seung-Hyun Chae, Xuefeng Zhang, Kuan-Hsun Lu, Jay Im, P. S. Ho, Acta Materialia 55 pp. 337-344 (2007)
27. H.Gan and K. N. Tu, J. Appl. Phys. 97, 063514 (2005)

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